FR2501914A1 - Diode zener 4 a 8 volts fonctionnant en avalanche a faible niveau de courant et procede de fabrication - Google Patents
Diode zener 4 a 8 volts fonctionnant en avalanche a faible niveau de courant et procede de fabrication Download PDFInfo
- Publication number
- FR2501914A1 FR2501914A1 FR8105132A FR8105132A FR2501914A1 FR 2501914 A1 FR2501914 A1 FR 2501914A1 FR 8105132 A FR8105132 A FR 8105132A FR 8105132 A FR8105132 A FR 8105132A FR 2501914 A1 FR2501914 A1 FR 2501914A1
- Authority
- FR
- France
- Prior art keywords
- type
- zone
- zener diode
- substrate
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 claims abstract description 10
- 238000009792 diffusion process Methods 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 9
- 230000035515 penetration Effects 0.000 claims abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 13
- 230000000873 masking effect Effects 0.000 claims description 7
- 238000000407 epitaxy Methods 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 claims description 3
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 2
- 229910052740 iodine Inorganic materials 0.000 claims description 2
- 239000011630 iodine Substances 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 239000012808 vapor phase Substances 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 abstract description 11
- 230000000630 rising effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 15
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8105132A FR2501914A1 (fr) | 1981-03-13 | 1981-03-13 | Diode zener 4 a 8 volts fonctionnant en avalanche a faible niveau de courant et procede de fabrication |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8105132A FR2501914A1 (fr) | 1981-03-13 | 1981-03-13 | Diode zener 4 a 8 volts fonctionnant en avalanche a faible niveau de courant et procede de fabrication |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2501914A1 true FR2501914A1 (fr) | 1982-09-17 |
| FR2501914B1 FR2501914B1 (tr) | 1985-02-08 |
Family
ID=9256244
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8105132A Granted FR2501914A1 (fr) | 1981-03-13 | 1981-03-13 | Diode zener 4 a 8 volts fonctionnant en avalanche a faible niveau de courant et procede de fabrication |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2501914A1 (tr) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0109888A2 (en) * | 1982-11-12 | 1984-05-30 | FAIRCHILD CAMERA & INSTRUMENT CORPORATION | Subsurface Zener diode |
| EP0547675A2 (en) * | 1991-12-16 | 1993-06-23 | Koninklijke Philips Electronics N.V. | Zener diode with reference diode and protective diode |
| WO1998028786A2 (en) * | 1996-12-24 | 1998-07-02 | Koninklijke Philips Electronics N.V. | Method of manufacturing a glass-covered semiconductor device and a glass-covered semiconductor device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2205746A1 (tr) * | 1972-11-07 | 1974-05-31 | Sescosem | |
| DE2916114A1 (de) * | 1978-04-21 | 1979-10-31 | Hitachi Ltd | Halbleitervorrichtung |
| FR2470443A1 (fr) * | 1979-11-27 | 1981-05-29 | Thomson Csf | Procede de fabrication de diodes zener et diodes obtenues |
-
1981
- 1981-03-13 FR FR8105132A patent/FR2501914A1/fr active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2205746A1 (tr) * | 1972-11-07 | 1974-05-31 | Sescosem | |
| DE2916114A1 (de) * | 1978-04-21 | 1979-10-31 | Hitachi Ltd | Halbleitervorrichtung |
| FR2470443A1 (fr) * | 1979-11-27 | 1981-05-29 | Thomson Csf | Procede de fabrication de diodes zener et diodes obtenues |
Non-Patent Citations (1)
| Title |
|---|
| EXBK/67 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0109888A2 (en) * | 1982-11-12 | 1984-05-30 | FAIRCHILD CAMERA & INSTRUMENT CORPORATION | Subsurface Zener diode |
| EP0109888A3 (en) * | 1982-11-12 | 1987-05-20 | FAIRCHILD CAMERA & INSTRUMENT CORPORATION | Subsurface zener diode |
| EP0547675A2 (en) * | 1991-12-16 | 1993-06-23 | Koninklijke Philips Electronics N.V. | Zener diode with reference diode and protective diode |
| EP0547675A3 (tr) * | 1991-12-16 | 1994-01-26 | Koninkl Philips Electronics Nv | |
| US5336924A (en) * | 1991-12-16 | 1994-08-09 | U.S. Philips Corporation | Zener diode having a reference diode and a protective diode |
| WO1998028786A2 (en) * | 1996-12-24 | 1998-07-02 | Koninklijke Philips Electronics N.V. | Method of manufacturing a glass-covered semiconductor device and a glass-covered semiconductor device |
| WO1998028786A3 (en) * | 1996-12-24 | 1998-09-03 | Philips Electronics Nv | Method of manufacturing a glass-covered semiconductor device and a glass-covered semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2501914B1 (tr) | 1985-02-08 |
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