FR2490876B1 - Photodetecteur a bande interdite progressive - Google Patents
Photodetecteur a bande interdite progressiveInfo
- Publication number
- FR2490876B1 FR2490876B1 FR8117556A FR8117556A FR2490876B1 FR 2490876 B1 FR2490876 B1 FR 2490876B1 FR 8117556 A FR8117556 A FR 8117556A FR 8117556 A FR8117556 A FR 8117556A FR 2490876 B1 FR2490876 B1 FR 2490876B1
- Authority
- FR
- France
- Prior art keywords
- progressive band
- band photodetector
- photodetector
- progressive
- band
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000000750 progressive effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/188,719 US4383269A (en) | 1980-09-19 | 1980-09-19 | Graded bandgap photodetector |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2490876A1 FR2490876A1 (fr) | 1982-03-26 |
FR2490876B1 true FR2490876B1 (fr) | 1985-10-18 |
Family
ID=22694248
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8117556A Expired FR2490876B1 (fr) | 1980-09-19 | 1981-09-17 | Photodetecteur a bande interdite progressive |
Country Status (5)
Country | Link |
---|---|
US (1) | US4383269A (fr) |
JP (1) | JPS5784186A (fr) |
DE (1) | DE3136528A1 (fr) |
FR (1) | FR2490876B1 (fr) |
GB (1) | GB2084797B (fr) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4473835A (en) * | 1981-06-19 | 1984-09-25 | At&T Bell Laboratories | Long wavelength avalanche photodetector |
JPS5861679A (ja) * | 1981-10-07 | 1983-04-12 | Kokusai Denshin Denwa Co Ltd <Kdd> | 量子井戸層付アバランシ・ホトダイオ−ド |
US4476477A (en) * | 1982-02-23 | 1984-10-09 | At&T Bell Laboratories | Graded bandgap multilayer avalanche photodetector with energy step backs |
US4518979A (en) * | 1982-06-30 | 1985-05-21 | International Business Machines Corporation | Semiconductor transistor with graded base and collector |
US4599632A (en) * | 1982-08-30 | 1986-07-08 | At&T Bell Laboratories | Photodetector with graded bandgap region |
JPS5984589A (ja) * | 1982-11-08 | 1984-05-16 | Fujitsu Ltd | アバランシフオトダイオード |
US4525687A (en) * | 1983-02-28 | 1985-06-25 | At&T Bell Laboratories | High speed light modulator using multiple quantum well structures |
JPS6016474A (ja) * | 1983-07-08 | 1985-01-28 | Nec Corp | ヘテロ多重接合型光検出器 |
EP0150564A3 (fr) * | 1983-10-26 | 1986-05-14 | AT&T Corp. | Dispositif électronique comprenant une hétérojonction |
US4694318A (en) * | 1984-12-05 | 1987-09-15 | American Telephone And Telegraph Company, At&T Bell Laboratories | Sawtooth photodetector |
US4597004A (en) * | 1985-03-04 | 1986-06-24 | Rca Corporation | Photodetector |
US4788579A (en) * | 1985-09-30 | 1988-11-29 | The General Electric Company | Semiconductor superlattice |
FR2592217B1 (fr) * | 1985-12-20 | 1988-02-05 | Thomson Csf | Photocathode a amplification interne |
US4839706A (en) * | 1986-08-07 | 1989-06-13 | Polaroid Corporation | Avalanche photodetector |
US4755663A (en) * | 1986-12-08 | 1988-07-05 | Bell Communications Research, Inc. | Textured surface, graded gap switch for transmission line optical detectors |
FR2612334B1 (fr) * | 1986-12-12 | 1989-04-21 | Thomson Csf | Dispositif de multiplication de porteurs de charge par un phenomene d'avalanche et son application aux photodetecteurs, aux photocathodes, et aux visionneurs infrarouges |
EP0304048B1 (fr) * | 1987-08-19 | 1997-05-28 | Nec Corporation | Photodiode planaire à avalanche à hétérojonction |
US4860074A (en) * | 1987-11-05 | 1989-08-22 | The United States Of America As Represented By The Administrator, National Aeronautics And Space Administration | Alternating gradient photodetector |
GB2212658B (en) * | 1987-11-13 | 1992-02-12 | Plessey Co Plc | Solid state light source |
US5185647A (en) * | 1988-12-12 | 1993-02-09 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Long wavelength infrared detector |
US5204284A (en) * | 1989-01-19 | 1993-04-20 | Hewlett-Packard Company | Method of making a high band-gap opto-electronic device |
US5121181A (en) * | 1989-01-31 | 1992-06-09 | International Business Machines Corporation | Resonant tunneling photodetector for long wavelength applications |
US5144138A (en) * | 1989-10-06 | 1992-09-01 | Texas Instruments Incorporated | Infrared detector and method |
US5051804A (en) * | 1989-12-01 | 1991-09-24 | The United States Of America As Represented By The United States Department Of Energy | Photodetector having high speed and sensitivity |
US5345093A (en) * | 1991-04-15 | 1994-09-06 | The United States Of America As Represented By The Secretary Of The Navy | Graded bandgap semiconductor device for real-time imaging |
US5138416A (en) * | 1991-07-12 | 1992-08-11 | Xerox Corporation | Multi-color photosensitive element with heterojunctions |
US5298771A (en) * | 1992-11-09 | 1994-03-29 | Xerox Corporation | Color imaging charge-coupled array with photosensitive layers in potential wells |
US5686734A (en) * | 1993-01-22 | 1997-11-11 | Canon Kabushiki Kaisha | Thin film semiconductor device and photoelectric conversion device using the thin film semiconductor device |
US5378916A (en) * | 1993-02-17 | 1995-01-03 | Xerox Corporation | Color imaging charge-coupled array with multiple photosensitive regions |
EP0757392B1 (fr) * | 1995-08-03 | 2003-12-17 | Hitachi Europe Limited | Structures semi-conductrices |
US6326650B1 (en) | 1995-08-03 | 2001-12-04 | Jeremy Allam | Method of forming a semiconductor structure |
JP3287458B2 (ja) * | 1998-06-24 | 2002-06-04 | 日本電気株式会社 | 超高速・低電圧駆動アバランシェ増倍型半導体受光素子 |
WO2009139936A2 (fr) * | 2008-02-14 | 2009-11-19 | California Institute Of Technology | Détection de photon unique avec multiplication d'auto-désactivation |
AU2014347256B2 (en) * | 2013-08-27 | 2018-08-09 | Georgia State University Research Foundation, Inc. | Tunable hot-carrier photodetector |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1014337B (it) * | 1973-06-21 | 1977-04-20 | Nasa | Cella solare |
FR2278155A1 (fr) * | 1974-07-10 | 1976-02-06 | Radiotechnique Compelec | Convertisseur de rayonnement en energie electrique |
US3995303A (en) * | 1975-06-05 | 1976-11-30 | Bell Telephone Laboratories, Incorporated | Growth and operation of a step-graded ternary III-V heterojunction p-n diode photodetector |
JPS5421294A (en) * | 1977-07-19 | 1979-02-17 | Mitsubishi Electric Corp | Avalanche photo diode |
US4144540A (en) * | 1978-02-06 | 1979-03-13 | The United States Of America As Represented By The Secretary Of The Navy | Tunable infrared detector with narrow bandwidth |
JPS5513907A (en) * | 1978-07-17 | 1980-01-31 | Kokusai Denshin Denwa Co Ltd <Kdd> | Avalnche photo diode with semiconductor hetero construction |
US4203124A (en) * | 1978-10-06 | 1980-05-13 | Bell Telephone Laboratories, Incorporated | Low noise multistage avalanche photodetector |
-
1980
- 1980-09-19 US US06/188,719 patent/US4383269A/en not_active Expired - Lifetime
-
1981
- 1981-09-15 DE DE19813136528 patent/DE3136528A1/de not_active Withdrawn
- 1981-09-17 FR FR8117556A patent/FR2490876B1/fr not_active Expired
- 1981-09-17 GB GB8128083A patent/GB2084797B/en not_active Expired
- 1981-09-18 JP JP56146477A patent/JPS5784186A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
GB2084797B (en) | 1984-05-10 |
JPS5784186A (en) | 1982-05-26 |
FR2490876A1 (fr) | 1982-03-26 |
US4383269A (en) | 1983-05-10 |
GB2084797A (en) | 1982-04-15 |
DE3136528A1 (de) | 1982-05-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |