FR2488443A1 - Procede et dispositif d'oxydation de tranches de silicium - Google Patents

Procede et dispositif d'oxydation de tranches de silicium Download PDF

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Publication number
FR2488443A1
FR2488443A1 FR8115181A FR8115181A FR2488443A1 FR 2488443 A1 FR2488443 A1 FR 2488443A1 FR 8115181 A FR8115181 A FR 8115181A FR 8115181 A FR8115181 A FR 8115181A FR 2488443 A1 FR2488443 A1 FR 2488443A1
Authority
FR
France
Prior art keywords
mixture
oxidizing environment
gas
tube
hcl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
FR8115181A
Other languages
English (en)
French (fr)
Inventor
Paul Felix Schmidt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2488443A1 publication Critical patent/FR2488443A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/005—Oxydation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
FR8115181A 1980-08-11 1981-08-05 Procede et dispositif d'oxydation de tranches de silicium Pending FR2488443A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US17690180A 1980-08-11 1980-08-11

Publications (1)

Publication Number Publication Date
FR2488443A1 true FR2488443A1 (fr) 1982-02-12

Family

ID=22646361

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8115181A Pending FR2488443A1 (fr) 1980-08-11 1981-08-05 Procede et dispositif d'oxydation de tranches de silicium

Country Status (5)

Country Link
JP (1) JPS5754331A (https=)
DE (1) DE3131086A1 (https=)
FR (1) FR2488443A1 (https=)
GB (1) GB2082384A (https=)
NL (1) NL8103752A (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0518182Y2 (https=) * 1985-01-25 1993-05-14
US4606935A (en) * 1985-10-10 1986-08-19 International Business Machines Corporation Process and apparatus for producing high purity oxidation on a semiconductor substrate
US5721176A (en) * 1992-05-29 1998-02-24 Olin Corporation Use of oxalyl chloride to form chloride-doped silicon dioxide films of silicon substrates

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2026156A1 (en) * 1970-05-29 1971-12-09 Licentia Gmbh Thermal oxidizer for solid bodies - using water vapour - enriched carrier gas as oxidant
GB1347324A (en) * 1970-11-10 1974-02-27 Northern Electric Co Method of growing silicon dioxide on silicon material
FR2382931A1 (fr) * 1977-03-09 1978-10-06 Atomel Corp Procede et appareil de traitement chimique en phase gazeuse a pression et temperature elevees
NL7903198A (nl) * 1979-04-24 1980-10-28 Philips Nv Werkwijze voor het vervaardigen van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd volgens de werkwijze.

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2026156A1 (en) * 1970-05-29 1971-12-09 Licentia Gmbh Thermal oxidizer for solid bodies - using water vapour - enriched carrier gas as oxidant
GB1347324A (en) * 1970-11-10 1974-02-27 Northern Electric Co Method of growing silicon dioxide on silicon material
FR2382931A1 (fr) * 1977-03-09 1978-10-06 Atomel Corp Procede et appareil de traitement chimique en phase gazeuse a pression et temperature elevees
NL7903198A (nl) * 1979-04-24 1980-10-28 Philips Nv Werkwijze voor het vervaardigen van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd volgens de werkwijze.

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/77 *
EXBK/79 *

Also Published As

Publication number Publication date
NL8103752A (nl) 1982-03-01
GB2082384A (en) 1982-03-03
JPS5754331A (https=) 1982-03-31
DE3131086A1 (de) 1982-03-25

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