FR2476944B1 - - Google Patents
Info
- Publication number
- FR2476944B1 FR2476944B1 FR8003814A FR8003814A FR2476944B1 FR 2476944 B1 FR2476944 B1 FR 2476944B1 FR 8003814 A FR8003814 A FR 8003814A FR 8003814 A FR8003814 A FR 8003814A FR 2476944 B1 FR2476944 B1 FR 2476944B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04Q—SELECTING
- H04Q3/00—Selecting arrangements
- H04Q3/42—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker
- H04Q3/52—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements
- H04Q3/526—Optical switching systems
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
- H10F55/205—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive semiconductor devices have no potential barriers, e.g. photoresistors
- H10F55/207—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive semiconductor devices have no potential barriers, e.g. photoresistors wherein the electric light source comprises semiconductor devices having potential barriers, e.g. light emitting diodes
Landscapes
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Electronic Switches (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8003814A FR2476944A1 (fr) | 1980-02-21 | 1980-02-21 | Relais optoelectronique integre utilisant un semiconducteur a photoconductivite persistante et matrice de tels relais |
| US06/234,005 US4412235A (en) | 1980-02-21 | 1981-02-12 | Integrated opto-electronic relay using a semiconductor with persistent photoconductivity and a matrix of such relays |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8003814A FR2476944A1 (fr) | 1980-02-21 | 1980-02-21 | Relais optoelectronique integre utilisant un semiconducteur a photoconductivite persistante et matrice de tels relais |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2476944A1 FR2476944A1 (fr) | 1981-08-28 |
| FR2476944B1 true FR2476944B1 (enExample) | 1982-01-15 |
Family
ID=9238814
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8003814A Granted FR2476944A1 (fr) | 1980-02-21 | 1980-02-21 | Relais optoelectronique integre utilisant un semiconducteur a photoconductivite persistante et matrice de tels relais |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4412235A (enExample) |
| FR (1) | FR2476944A1 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3713067A1 (de) * | 1986-09-30 | 1988-03-31 | Siemens Ag | Optoelektronisches koppelelement und verfahren zu dessen herstellung |
| US5072122A (en) * | 1990-10-15 | 1991-12-10 | Kansas State University Research Foundation | Charge storage image device using persistent photoconductivity crystals |
| JP3060875B2 (ja) * | 1994-04-08 | 2000-07-10 | 日本電気株式会社 | オプトエレクトロニクス装置および回路パターン形成方法と光回折格子の形成方法 |
| US6363097B1 (en) * | 1998-09-18 | 2002-03-26 | Nec Corporation | Semiconductor laser with a rewritable wavelength stabilizer |
| US6229135B1 (en) * | 1999-07-02 | 2001-05-08 | Cosmo Electronics Corp. | Optoelectronic IC relay with observing hole |
| GB2400506A (en) * | 2003-03-03 | 2004-10-13 | Gareth Monkman | A binary or analogue opto-isolator using an undoped GaAs photoconductor |
| US7085667B2 (en) * | 2003-05-19 | 2006-08-01 | Analog Microelectronics, Inc. | System and method of heating up a semiconductor device in a standard test environment |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1112985A (en) | 1966-08-09 | 1968-05-08 | Standard Telephones Cables Ltd | Improvements in or relating to crosspoint switches |
| US3748480A (en) * | 1970-11-02 | 1973-07-24 | Motorola Inc | Monolithic coupling device including light emitter and light sensor |
| FR2399740A1 (fr) * | 1977-08-02 | 1979-03-02 | Thomson Csf | Diode a avalanche a hetero-jonction, et oscillateur en mode dit " a temps de transit " utilisant une telle diode |
| US4167791A (en) * | 1978-01-25 | 1979-09-11 | Banavar Jayanth R | Non-volatile information storage arrays of cryogenic pin diodes |
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1980
- 1980-02-21 FR FR8003814A patent/FR2476944A1/fr active Granted
-
1981
- 1981-02-12 US US06/234,005 patent/US4412235A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| FR2476944A1 (fr) | 1981-08-28 |
| US4412235A (en) | 1983-10-25 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |