FR2476944A1 - Relais optoelectronique integre utilisant un semiconducteur a photoconductivite persistante et matrice de tels relais - Google Patents

Relais optoelectronique integre utilisant un semiconducteur a photoconductivite persistante et matrice de tels relais Download PDF

Info

Publication number
FR2476944A1
FR2476944A1 FR8003814A FR8003814A FR2476944A1 FR 2476944 A1 FR2476944 A1 FR 2476944A1 FR 8003814 A FR8003814 A FR 8003814A FR 8003814 A FR8003814 A FR 8003814A FR 2476944 A1 FR2476944 A1 FR 2476944A1
Authority
FR
France
Prior art keywords
layer
substrate
relay
diode
constituted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8003814A
Other languages
English (en)
French (fr)
Other versions
FR2476944B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to FR8003814A priority Critical patent/FR2476944A1/fr
Priority to US06/234,005 priority patent/US4412235A/en
Publication of FR2476944A1 publication Critical patent/FR2476944A1/fr
Application granted granted Critical
Publication of FR2476944B1 publication Critical patent/FR2476944B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04Q—SELECTING
    • H04Q3/00—Selecting arrangements
    • H04Q3/42—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker
    • H04Q3/52—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements
    • H04Q3/526—Optical switching systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/205—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive semiconductor devices have no potential barriers, e.g. photoresistors
    • H10F55/207—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive semiconductor devices have no potential barriers, e.g. photoresistors wherein the electric light source comprises semiconductor devices having potential barriers, e.g. light emitting diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Electronic Switches (AREA)
FR8003814A 1980-02-21 1980-02-21 Relais optoelectronique integre utilisant un semiconducteur a photoconductivite persistante et matrice de tels relais Granted FR2476944A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR8003814A FR2476944A1 (fr) 1980-02-21 1980-02-21 Relais optoelectronique integre utilisant un semiconducteur a photoconductivite persistante et matrice de tels relais
US06/234,005 US4412235A (en) 1980-02-21 1981-02-12 Integrated opto-electronic relay using a semiconductor with persistent photoconductivity and a matrix of such relays

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8003814A FR2476944A1 (fr) 1980-02-21 1980-02-21 Relais optoelectronique integre utilisant un semiconducteur a photoconductivite persistante et matrice de tels relais

Publications (2)

Publication Number Publication Date
FR2476944A1 true FR2476944A1 (fr) 1981-08-28
FR2476944B1 FR2476944B1 (enExample) 1982-01-15

Family

ID=9238814

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8003814A Granted FR2476944A1 (fr) 1980-02-21 1980-02-21 Relais optoelectronique integre utilisant un semiconducteur a photoconductivite persistante et matrice de tels relais

Country Status (2)

Country Link
US (1) US4412235A (enExample)
FR (1) FR2476944A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0678923A3 (en) * 1994-04-08 1996-02-28 Nec Corp Optoelectronic devices with stable photoconductivity.

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3713067A1 (de) * 1986-09-30 1988-03-31 Siemens Ag Optoelektronisches koppelelement und verfahren zu dessen herstellung
US5072122A (en) * 1990-10-15 1991-12-10 Kansas State University Research Foundation Charge storage image device using persistent photoconductivity crystals
US6363097B1 (en) * 1998-09-18 2002-03-26 Nec Corporation Semiconductor laser with a rewritable wavelength stabilizer
US6229135B1 (en) * 1999-07-02 2001-05-08 Cosmo Electronics Corp. Optoelectronic IC relay with observing hole
GB2400506A (en) * 2003-03-03 2004-10-13 Gareth Monkman A binary or analogue opto-isolator using an undoped GaAs photoconductor
US7085667B2 (en) * 2003-05-19 2006-08-01 Analog Microelectronics, Inc. System and method of heating up a semiconductor device in a standard test environment

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1112985A (en) 1966-08-09 1968-05-08 Standard Telephones Cables Ltd Improvements in or relating to crosspoint switches
US3748480A (en) * 1970-11-02 1973-07-24 Motorola Inc Monolithic coupling device including light emitter and light sensor
FR2399740A1 (fr) * 1977-08-02 1979-03-02 Thomson Csf Diode a avalanche a hetero-jonction, et oscillateur en mode dit " a temps de transit " utilisant une telle diode
US4167791A (en) * 1978-01-25 1979-09-11 Banavar Jayanth R Non-volatile information storage arrays of cryogenic pin diodes

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0678923A3 (en) * 1994-04-08 1996-02-28 Nec Corp Optoelectronic devices with stable photoconductivity.

Also Published As

Publication number Publication date
FR2476944B1 (enExample) 1982-01-15
US4412235A (en) 1983-10-25

Similar Documents

Publication Publication Date Title
US6452220B1 (en) Current isolating epitaxial buffer layers for high voltage photodiode array
JP3183296B2 (ja) 転倒型透明基板光電子装置とその製造
US6252221B1 (en) Photo-conductive switch having an improved semiconductor structure
EP0350351A1 (fr) Photodiode et matrice de photodiodes sur matériau II-VI et leurs procédés de fabrication
FR2479569A1 (fr) Dispositif de conversion de rayonnement electromagnetique en courant electrique
EP0236189B1 (fr) Structure semi-conductrice monolithique d'un transistor bipolaire à hétérojonction et d'un laser
US20140182668A1 (en) High efficiency silicon-compatible photodetectors based on ge quantum dots and ge/si hetero-nanowires
EP2149919B1 (fr) Diode électroluminescente en matériau semiconducteur et son procédé de fabrication
EP0458688A1 (fr) ProcédÀ© de fabrication d'une structure intégrée guide-détecteur de lumière en matÀ©riau semi-conducteur
FR2512286A1 (fr) Laser a semi-conducteur
Gao et al. In0. 53Ga0. 47As metal‐semiconductor‐metal photodiodes with transparent cadmium tin oxide Schottky contacts
US7781853B2 (en) Plasmon-enhanced electromagnetic-radiation-emitting devices and methods for fabricating the same
FR2690286A1 (fr) Cavité laser à hétérostructure semi-conductrice dissymétrique et laser équipé de cette cavité.
FR2476944A1 (fr) Relais optoelectronique integre utilisant un semiconducteur a photoconductivite persistante et matrice de tels relais
Masini et al. High responsitivity near infrared Ge photodetectors integrated on Si
US6362483B1 (en) Visible-blind UV detectors
EP0001728A1 (fr) Diode émettrice et réceptrice de lumière notamment pour télécommunications optiques
EP0232662B1 (fr) Structure semi-conductrice monolithique d'un laser et d'un transistor à effet de champ et son procédé de fabrication
FR3004000A1 (fr) Dispositif electroluminescent avec capteur integre et procede de controle de l'emission du dispositif
KR100422294B1 (ko) Ｃｄ/Ｈｇ 분위기에서 열처리에 의한 ＨｇＣｄＴｅ 접합다이오드의 패시배이션 방법
Forrest Organic-on-organic semiconductor heterojunctions: building block for the next generation of optoelectronic devices
FR2569056A1 (fr) Transistor a induction statique du type a injection par effet tunnel et circuit integre comprenant un tel transistor
EP3240030A1 (fr) Dispositif de photo-détection à réseau inter-diodes sur-dopé et procédé de fabrication
FR2661566A1 (fr) Laser compact a semi-conducteur du type a pompage electronique.
FR2666175A1 (fr) Transistor a effet de champ a supraconducteur.

Legal Events

Date Code Title Description
ST Notification of lapse