FR2476690B1 - - Google Patents

Info

Publication number
FR2476690B1
FR2476690B1 FR8004323A FR8004323A FR2476690B1 FR 2476690 B1 FR2476690 B1 FR 2476690B1 FR 8004323 A FR8004323 A FR 8004323A FR 8004323 A FR8004323 A FR 8004323A FR 2476690 B1 FR2476690 B1 FR 2476690B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8004323A
Other languages
French (fr)
Other versions
FR2476690A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR8004323A priority Critical patent/FR2476690A1/fr
Priority to DE3106484A priority patent/DE3106484C2/de
Priority to GB8105652A priority patent/GB2070455B/en
Priority to US06/237,816 priority patent/US4393806A/en
Priority to JP56026210A priority patent/JPS6023496B2/ja
Publication of FR2476690A1 publication Critical patent/FR2476690A1/fr
Application granted granted Critical
Publication of FR2476690B1 publication Critical patent/FR2476690B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR8004323A 1980-02-27 1980-02-27 Nacelle utilisable pour des depots epitaxiques en phase liquide et procede de depot mettant en jeu ladite nacelle Granted FR2476690A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR8004323A FR2476690A1 (fr) 1980-02-27 1980-02-27 Nacelle utilisable pour des depots epitaxiques en phase liquide et procede de depot mettant en jeu ladite nacelle
DE3106484A DE3106484C2 (de) 1980-02-27 1981-02-21 Schiffchen für Flüssigphasenepitaxie
GB8105652A GB2070455B (en) 1980-02-27 1981-02-23 Apparatus for growing semiconductor layers by liquid phase epitaxy
US06/237,816 US4393806A (en) 1980-02-27 1981-02-25 Boat for the epitaxial growth from the liquid phase
JP56026210A JPS6023496B2 (ja) 1980-02-27 1981-02-26 エピタキシヤル成長法およびボ−ト

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8004323A FR2476690A1 (fr) 1980-02-27 1980-02-27 Nacelle utilisable pour des depots epitaxiques en phase liquide et procede de depot mettant en jeu ladite nacelle

Publications (2)

Publication Number Publication Date
FR2476690A1 FR2476690A1 (fr) 1981-08-28
FR2476690B1 true FR2476690B1 ( ) 1982-05-07

Family

ID=9239049

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8004323A Granted FR2476690A1 (fr) 1980-02-27 1980-02-27 Nacelle utilisable pour des depots epitaxiques en phase liquide et procede de depot mettant en jeu ladite nacelle

Country Status (5)

Country Link
US (1) US4393806A ( )
JP (1) JPS6023496B2 ( )
DE (1) DE3106484C2 ( )
FR (1) FR2476690A1 ( )
GB (1) GB2070455B ( )

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE443583B (sv) * 1982-11-12 1986-03-03 Ericsson Telefon Ab L M Anordning vid vetskefasepitaxi
GB2138697A (en) * 1983-04-27 1984-10-31 Philips Electronic Associated Liquid phase epitaxy apparatus
US4755364A (en) * 1986-05-29 1988-07-05 Rockwell International Corporation Liquid phase epitaxy apparatus and method
CN103849929B (zh) * 2014-01-17 2016-08-17 中国科学院上海技术物理研究所 一种用于浸渍式碲镉汞液相外延的样品架
WO2017019746A1 (en) 2015-07-28 2017-02-02 The Penn State Research Foundation Method and apparatus for producing crystalline cladding and crystalline core optical fibers
DE102017009110B3 (de) 2017-09-29 2018-10-04 3-5 Power Electronics GmbH Flüssigphasenepitaxievorrichtung

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3665888A (en) * 1970-03-16 1972-05-30 Bell Telephone Labor Inc Horizontal liquid phase crystal growth apparatus
NL7306004A ( ) * 1973-05-01 1974-11-05
JPS5248949B2 ( ) * 1974-12-20 1977-12-13
JPS54152862A (en) * 1978-05-23 1979-12-01 Sharp Corp Semiconductor producing device

Also Published As

Publication number Publication date
FR2476690A1 (fr) 1981-08-28
DE3106484A1 (de) 1982-01-21
JPS6023496B2 (ja) 1985-06-07
DE3106484C2 (de) 1986-05-15
US4393806A (en) 1983-07-19
JPS56133822A (en) 1981-10-20
GB2070455A (en) 1981-09-09
GB2070455B (en) 1984-02-29

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Legal Events

Date Code Title Description
CA Change of address
CD Change of name or company name
ST Notification of lapse