FR2476690B1 - - Google Patents
Info
- Publication number
- FR2476690B1 FR2476690B1 FR8004323A FR8004323A FR2476690B1 FR 2476690 B1 FR2476690 B1 FR 2476690B1 FR 8004323 A FR8004323 A FR 8004323A FR 8004323 A FR8004323 A FR 8004323A FR 2476690 B1 FR2476690 B1 FR 2476690B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/063—Sliding boat system
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8004323A FR2476690A1 (fr) | 1980-02-27 | 1980-02-27 | Nacelle utilisable pour des depots epitaxiques en phase liquide et procede de depot mettant en jeu ladite nacelle |
DE3106484A DE3106484C2 (de) | 1980-02-27 | 1981-02-21 | Schiffchen für Flüssigphasenepitaxie |
GB8105652A GB2070455B (en) | 1980-02-27 | 1981-02-23 | Apparatus for growing semiconductor layers by liquid phase epitaxy |
US06/237,816 US4393806A (en) | 1980-02-27 | 1981-02-25 | Boat for the epitaxial growth from the liquid phase |
JP56026210A JPS6023496B2 (ja) | 1980-02-27 | 1981-02-26 | エピタキシヤル成長法およびボ−ト |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8004323A FR2476690A1 (fr) | 1980-02-27 | 1980-02-27 | Nacelle utilisable pour des depots epitaxiques en phase liquide et procede de depot mettant en jeu ladite nacelle |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2476690A1 FR2476690A1 (fr) | 1981-08-28 |
FR2476690B1 true FR2476690B1 (fr) | 1982-05-07 |
Family
ID=9239049
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8004323A Granted FR2476690A1 (fr) | 1980-02-27 | 1980-02-27 | Nacelle utilisable pour des depots epitaxiques en phase liquide et procede de depot mettant en jeu ladite nacelle |
Country Status (5)
Country | Link |
---|---|
US (1) | US4393806A (fr) |
JP (1) | JPS6023496B2 (fr) |
DE (1) | DE3106484C2 (fr) |
FR (1) | FR2476690A1 (fr) |
GB (1) | GB2070455B (fr) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE443583B (sv) * | 1982-11-12 | 1986-03-03 | Ericsson Telefon Ab L M | Anordning vid vetskefasepitaxi |
GB2138697A (en) * | 1983-04-27 | 1984-10-31 | Philips Electronic Associated | Liquid phase epitaxy apparatus |
US4755364A (en) * | 1986-05-29 | 1988-07-05 | Rockwell International Corporation | Liquid phase epitaxy apparatus and method |
CN103849929B (zh) * | 2014-01-17 | 2016-08-17 | 中国科学院上海技术物理研究所 | 一种用于浸渍式碲镉汞液相外延的样品架 |
WO2017019746A1 (fr) | 2015-07-28 | 2017-02-02 | The Penn State Research Foundation | Procédé et appareil de production de fibres optiques à gaine cristalline et noyau cristallin |
DE102017009110B3 (de) | 2017-09-29 | 2018-10-04 | 3-5 Power Electronics GmbH | Flüssigphasenepitaxievorrichtung |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3665888A (en) * | 1970-03-16 | 1972-05-30 | Bell Telephone Labor Inc | Horizontal liquid phase crystal growth apparatus |
NL7306004A (fr) * | 1973-05-01 | 1974-11-05 | ||
JPS5248949B2 (fr) * | 1974-12-20 | 1977-12-13 | ||
JPS54152862A (en) * | 1978-05-23 | 1979-12-01 | Sharp Corp | Semiconductor producing device |
-
1980
- 1980-02-27 FR FR8004323A patent/FR2476690A1/fr active Granted
-
1981
- 1981-02-21 DE DE3106484A patent/DE3106484C2/de not_active Expired
- 1981-02-23 GB GB8105652A patent/GB2070455B/en not_active Expired
- 1981-02-25 US US06/237,816 patent/US4393806A/en not_active Expired - Fee Related
- 1981-02-26 JP JP56026210A patent/JPS6023496B2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB2070455A (en) | 1981-09-09 |
GB2070455B (en) | 1984-02-29 |
DE3106484C2 (de) | 1986-05-15 |
JPS56133822A (en) | 1981-10-20 |
FR2476690A1 (fr) | 1981-08-28 |
JPS6023496B2 (ja) | 1985-06-07 |
US4393806A (en) | 1983-07-19 |
DE3106484A1 (de) | 1982-01-21 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
CA | Change of address | ||
CD | Change of name or company name | ||
ST | Notification of lapse |