FR2474256A1 - Procede d'ajustement de dispositifs a ondes acoustiques de surface - Google Patents
Procede d'ajustement de dispositifs a ondes acoustiques de surface Download PDFInfo
- Publication number
- FR2474256A1 FR2474256A1 FR8027786A FR8027786A FR2474256A1 FR 2474256 A1 FR2474256 A1 FR 2474256A1 FR 8027786 A FR8027786 A FR 8027786A FR 8027786 A FR8027786 A FR 8027786A FR 2474256 A1 FR2474256 A1 FR 2474256A1
- Authority
- FR
- France
- Prior art keywords
- acoustic device
- frequency
- corrosive gas
- process according
- central frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 44
- 238000010897 surface acoustic wave method Methods 0.000 title description 4
- 239000000463 material Substances 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 230000008569 process Effects 0.000 claims abstract description 19
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000010453 quartz Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000007772 electrode material Substances 0.000 claims description 5
- NEHMKBQYUWJMIP-UHFFFAOYSA-N chloromethane Chemical compound ClC NEHMKBQYUWJMIP-UHFFFAOYSA-N 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 4
- 230000005284 excitation Effects 0.000 claims description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 2
- AFYPFACVUDMOHA-UHFFFAOYSA-N chlorotrifluoromethane Chemical compound FC(F)(F)Cl AFYPFACVUDMOHA-UHFFFAOYSA-N 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims 3
- 229910018503 SF6 Inorganic materials 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 1
- 210000000988 bone and bone Anatomy 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 239000000460 chlorine Substances 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 229960000909 sulfur hexafluoride Drugs 0.000 claims 1
- 230000000873 masking effect Effects 0.000 abstract description 2
- 238000005507 spraying Methods 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 description 13
- 230000007797 corrosion Effects 0.000 description 13
- 239000007789 gas Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000004020 conductor Substances 0.000 description 4
- 241000238876 Acari Species 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
- H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/113,832 US4278492A (en) | 1980-01-21 | 1980-01-21 | Frequency trimming of surface acoustic wave devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2474256A1 true FR2474256A1 (fr) | 1981-07-24 |
| FR2474256B1 FR2474256B1 (enExample) | 1985-03-29 |
Family
ID=22351767
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8027786A Granted FR2474256A1 (fr) | 1980-01-21 | 1980-12-30 | Procede d'ajustement de dispositifs a ondes acoustiques de surface |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4278492A (enExample) |
| JP (1) | JPS56103513A (enExample) |
| DE (1) | DE3043156A1 (enExample) |
| FR (1) | FR2474256A1 (enExample) |
| GB (1) | GB2069277B (enExample) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4364016A (en) * | 1980-11-03 | 1982-12-14 | Sperry Corporation | Method for post fabrication frequency trimming of surface acoustic wave devices |
| US4414243A (en) * | 1982-07-06 | 1983-11-08 | General Electric Company | Method for making surface acoustic wave devices |
| FR2551861B1 (fr) * | 1983-09-09 | 1985-10-18 | Thomson Csf | Procede de mesure de la profondeur d'une gravure ionique |
| US4595853A (en) * | 1983-11-17 | 1986-06-17 | Hitachi, Ltd. | Apparatus for and method of determining properties of saw substrates |
| US4764244A (en) * | 1985-06-11 | 1988-08-16 | The Foxboro Company | Resonant sensor and method of making same |
| US4672254A (en) * | 1985-10-11 | 1987-06-09 | Massachusetts Institute Of Technology | Surface acoustic wave devices and method of manufacture thereof |
| GB2203590B (en) * | 1987-04-02 | 1991-02-06 | Stc Plc | Resonator manufacture |
| US4836882A (en) * | 1988-09-12 | 1989-06-06 | The United States Of America As Represented By The Secretary Of The Army | Method of making an acceleration hardened resonator |
| US4890369A (en) * | 1988-10-28 | 1990-01-02 | United Technologies Corporation | Method of manufacturing saw devices |
| US5111168A (en) * | 1990-08-15 | 1992-05-05 | Texas Instruments Incorporated | Real-time, in-situ saw filter delay adjustment |
| JP3244386B2 (ja) * | 1994-08-23 | 2002-01-07 | 松下電器産業株式会社 | 弾性表面波装置 |
| US5630949A (en) * | 1995-06-01 | 1997-05-20 | Tfr Technologies, Inc. | Method and apparatus for fabricating a piezoelectric resonator to a resonant frequency |
| US6273991B1 (en) * | 1999-07-28 | 2001-08-14 | Saunders & Associates, Inc. | Apparatus for plasma ion trimming of frequency devices |
| RU2190922C2 (ru) * | 2000-11-30 | 2002-10-10 | Омский научно-исследовательский институт приборостроения | Способ настройки на центральную частоту сверхузкополосного элемента на поверхностных акустических волнах |
| EP1381156A4 (en) * | 2001-04-19 | 2004-09-08 | Matsushita Electric Industrial Co Ltd | SURFACE WAVE COMPONENT AND METHOD FOR THE PRODUCTION THEREOF AND ELECTRONIC COMPONENT THEREFOR |
| KR101245296B1 (ko) | 2005-04-06 | 2013-03-19 | 바이오스케일, 아이엔씨. | 전기 응답 디바이스 |
| US9164051B2 (en) | 2005-04-06 | 2015-10-20 | Bioscale, Inc. | Electrically responsive device |
| WO2007127107A2 (en) * | 2006-04-21 | 2007-11-08 | Bioscale, Inc. | Microfabricated devices and method for fabricating microfabricated devices |
| US8689426B2 (en) | 2008-12-17 | 2014-04-08 | Sand 9, Inc. | Method of manufacturing a resonating structure |
| WO2011109382A1 (en) | 2010-03-01 | 2011-09-09 | Sand9, Inc. | Microelectromechanical gyroscopes and related apparatus and methods |
| US8833161B2 (en) | 2010-04-20 | 2014-09-16 | Sand 9, Inc. | Microelectromechanical gyroscopes and related apparatus and methods |
| WO2012040043A1 (en) | 2010-09-20 | 2012-03-29 | Sand9, Inc. | Resonant sensing using extensional modes of a plate |
| US9383208B2 (en) | 2011-10-13 | 2016-07-05 | Analog Devices, Inc. | Electromechanical magnetometer and applications thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4092588A (en) * | 1976-03-05 | 1978-05-30 | Thomson-Csf | Method of monitoring the machining by ion bombardment of a piezoelectric wafer |
| GB1529941A (en) * | 1975-01-15 | 1978-10-25 | Mullard Ltd | Electrical filters including coupled resonators |
| US4176004A (en) * | 1978-08-21 | 1979-11-27 | Westinghouse Electric Corp. | Method for modifying the characteristics of a semiconductor fusions |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3971684A (en) * | 1973-12-03 | 1976-07-27 | Hewlett-Packard Company | Etching thin film circuits and semiconductor chips |
| US4144507A (en) * | 1976-09-29 | 1979-03-13 | Texas Instruments Incorporated | Surface acoustic wave resonator incorporating coupling transducer into reflecting arrays |
-
1980
- 1980-01-21 US US06/113,832 patent/US4278492A/en not_active Expired - Lifetime
- 1980-10-29 GB GB8034778A patent/GB2069277B/en not_active Expired
- 1980-11-15 DE DE19803043156 patent/DE3043156A1/de not_active Ceased
- 1980-12-30 FR FR8027786A patent/FR2474256A1/fr active Granted
-
1981
- 1981-01-21 JP JP778681A patent/JPS56103513A/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1529941A (en) * | 1975-01-15 | 1978-10-25 | Mullard Ltd | Electrical filters including coupled resonators |
| US4092588A (en) * | 1976-03-05 | 1978-05-30 | Thomson-Csf | Method of monitoring the machining by ion bombardment of a piezoelectric wafer |
| US4176004A (en) * | 1978-08-21 | 1979-11-27 | Westinghouse Electric Corp. | Method for modifying the characteristics of a semiconductor fusions |
Also Published As
| Publication number | Publication date |
|---|---|
| US4278492A (en) | 1981-07-14 |
| JPS56103513A (en) | 1981-08-18 |
| FR2474256B1 (enExample) | 1985-03-29 |
| GB2069277B (en) | 1984-05-10 |
| GB2069277A (en) | 1981-08-19 |
| DE3043156A1 (de) | 1981-07-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |