FR2471049B1 - - Google Patents

Info

Publication number
FR2471049B1
FR2471049B1 FR7929764A FR7929764A FR2471049B1 FR 2471049 B1 FR2471049 B1 FR 2471049B1 FR 7929764 A FR7929764 A FR 7929764A FR 7929764 A FR7929764 A FR 7929764A FR 2471049 B1 FR2471049 B1 FR 2471049B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7929764A
Other languages
French (fr)
Other versions
FR2471049A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7929764A priority Critical patent/FR2471049A1/fr
Priority to EP80401623A priority patent/EP0030178A3/fr
Priority to NO803662A priority patent/NO803662L/no
Priority to JP17145080A priority patent/JPS5693374A/ja
Publication of FR2471049A1 publication Critical patent/FR2471049A1/fr
Application granted granted Critical
Publication of FR2471049B1 publication Critical patent/FR2471049B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213Channel regions of field-effect devices
    • H10D62/221Channel regions of field-effect devices of FETs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/80FETs having rectifying junction gate electrodes
    • H10D30/83FETs having PN junction gate electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/80FETs having rectifying junction gate electrodes
    • H10D30/87FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/125Shapes of junctions between the regions
FR7929764A 1979-12-04 1979-12-04 Transistor a effet de champ, procede de fabrication de celui-ci, et amplificateur comprenant un tel transistor Granted FR2471049A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR7929764A FR2471049A1 (fr) 1979-12-04 1979-12-04 Transistor a effet de champ, procede de fabrication de celui-ci, et amplificateur comprenant un tel transistor
EP80401623A EP0030178A3 (fr) 1979-12-04 1980-11-13 Transistor à effet de champ et procédé de fabrication de celui-ci
NO803662A NO803662L (no) 1979-12-04 1980-12-03 Felteffekttransistor, fremgangsmaate for dens fremstilling og forsterker med slik transistor
JP17145080A JPS5693374A (en) 1979-12-04 1980-12-04 Field effect transistor and method of manufacturing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7929764A FR2471049A1 (fr) 1979-12-04 1979-12-04 Transistor a effet de champ, procede de fabrication de celui-ci, et amplificateur comprenant un tel transistor

Publications (2)

Publication Number Publication Date
FR2471049A1 FR2471049A1 (fr) 1981-06-12
FR2471049B1 true FR2471049B1 (forum.php) 1983-11-25

Family

ID=9232375

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7929764A Granted FR2471049A1 (fr) 1979-12-04 1979-12-04 Transistor a effet de champ, procede de fabrication de celui-ci, et amplificateur comprenant un tel transistor

Country Status (4)

Country Link
EP (1) EP0030178A3 (forum.php)
JP (1) JPS5693374A (forum.php)
FR (1) FR2471049A1 (forum.php)
NO (1) NO803662L (forum.php)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100242477B1 (ko) * 1991-07-15 2000-02-01 비센트 비.인그라시아 반도체 장치

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2444489A1 (de) * 1974-09-18 1976-04-01 Heinz Prof Dr Rer Nat Beneking Halbleiteranordnung und verfahren zu ihrer herstellung
DE2821975C2 (de) * 1978-05-19 1983-01-27 Siemens AG, 1000 Berlin und 8000 München Metall-Halbleiter-Feldeffekttransistor (MESFET) und Verfahren zu dessen Herstellung

Also Published As

Publication number Publication date
JPS5693374A (en) 1981-07-28
EP0030178A2 (fr) 1981-06-10
FR2471049A1 (fr) 1981-06-12
NO803662L (no) 1981-06-05
EP0030178A3 (fr) 1981-07-01

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Legal Events

Date Code Title Description
ST Notification of lapse