FR2466101B1 - - Google Patents

Info

Publication number
FR2466101B1
FR2466101B1 FR7923242A FR7923242A FR2466101B1 FR 2466101 B1 FR2466101 B1 FR 2466101B1 FR 7923242 A FR7923242 A FR 7923242A FR 7923242 A FR7923242 A FR 7923242A FR 2466101 B1 FR2466101 B1 FR 2466101B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7923242A
Other languages
French (fr)
Other versions
FR2466101A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7923242A priority Critical patent/FR2466101A1/fr
Priority to EP80401252A priority patent/EP0026686B1/fr
Priority to DE8080401252T priority patent/DE3063148D1/de
Priority to US06/187,960 priority patent/US4420379A/en
Priority to JP13006480A priority patent/JPS5654072A/ja
Publication of FR2466101A1 publication Critical patent/FR2466101A1/fr
Application granted granted Critical
Publication of FR2466101B1 publication Critical patent/FR2466101B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)
FR7923242A 1979-09-18 1979-09-18 Procede de formation de couches de silicium polycristallin localisees sur des zones recouvertes de silice d'une plaquette de silicium et application a la fabrication d'un transistor mos non plan autoaligne Granted FR2466101A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR7923242A FR2466101A1 (fr) 1979-09-18 1979-09-18 Procede de formation de couches de silicium polycristallin localisees sur des zones recouvertes de silice d'une plaquette de silicium et application a la fabrication d'un transistor mos non plan autoaligne
EP80401252A EP0026686B1 (fr) 1979-09-18 1980-09-02 Procédé de fabrication de couches de silicium polycristallin localisées sur des zones recouvertes de silice d'une plaquette de silicium, et application à la fabrication d'un transistor MOS non plan auto-aligné
DE8080401252T DE3063148D1 (en) 1979-09-18 1980-09-02 Process for producing polycrystalline silicium layers located on silica clad regions of a silicium board, and application to the production of a non-planar self-aligned mos transistor
US06/187,960 US4420379A (en) 1979-09-18 1980-09-16 Method for the formation of polycrystalline silicon layers, and its application in the manufacture of a self-aligned, non planar, MOS transistor
JP13006480A JPS5654072A (en) 1979-09-18 1980-09-18 Method of forming polycrystalling silicon layer and method of manufacturing nonplanar mos transistor in automatic positioning type

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7923242A FR2466101A1 (fr) 1979-09-18 1979-09-18 Procede de formation de couches de silicium polycristallin localisees sur des zones recouvertes de silice d'une plaquette de silicium et application a la fabrication d'un transistor mos non plan autoaligne

Publications (2)

Publication Number Publication Date
FR2466101A1 FR2466101A1 (fr) 1981-03-27
FR2466101B1 true FR2466101B1 (OSRAM) 1983-07-01

Family

ID=9229752

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7923242A Granted FR2466101A1 (fr) 1979-09-18 1979-09-18 Procede de formation de couches de silicium polycristallin localisees sur des zones recouvertes de silice d'une plaquette de silicium et application a la fabrication d'un transistor mos non plan autoaligne

Country Status (5)

Country Link
US (1) US4420379A (OSRAM)
EP (1) EP0026686B1 (OSRAM)
JP (1) JPS5654072A (OSRAM)
DE (1) DE3063148D1 (OSRAM)
FR (1) FR2466101A1 (OSRAM)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2165090A (en) * 1984-09-26 1986-04-03 Philips Electronic Associated Improving the field distribution in high voltage semiconductor devices
US5072266A (en) * 1988-12-27 1991-12-10 Siliconix Incorporated Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry
US5466616A (en) * 1994-04-06 1995-11-14 United Microelectronics Corp. Method of producing an LDMOS transistor having reduced dimensions, reduced leakage, and a reduced propensity to latch-up
US5567634A (en) * 1995-05-01 1996-10-22 National Semiconductor Corporation Method of fabricating self-aligned contact trench DMOS transistors
GB2362755A (en) * 2000-05-25 2001-11-28 Nanogate Ltd Thin film field effect transistor with a conical structure

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3345274A (en) * 1964-04-22 1967-10-03 Westinghouse Electric Corp Method of making oxide film patterns
US3438873A (en) * 1966-05-11 1969-04-15 Bell Telephone Labor Inc Anodic treatment to alter solubility of dielectric films
US3627647A (en) * 1969-05-19 1971-12-14 Cogar Corp Fabrication method for semiconductor devices
US3640806A (en) * 1970-01-05 1972-02-08 Nippon Telegraph & Telephone Semiconductor device and method of producing the same
US3764491A (en) * 1971-12-13 1973-10-09 Bell Telephone Labor Inc Electrolytic oxidation of silicon
US3954523A (en) * 1975-04-14 1976-05-04 International Business Machines Corporation Process for fabricating devices having dielectric isolation utilizing anodic treatment and selective oxidation
JPS6027179B2 (ja) * 1975-11-05 1985-06-27 日本電気株式会社 多孔質シリコンの形成方法
FR2340619A1 (fr) * 1976-02-04 1977-09-02 Radiotechnique Compelec Perfectionnement au procede de fabrication de dispositifs semiconducteurs et dispositifs ainsi obtenus
JPS5362985A (en) * 1976-11-18 1978-06-05 Toshiba Corp Mis type field effect transistor and its production
US4116720A (en) * 1977-12-27 1978-09-26 Burroughs Corporation Method of making a V-MOS field effect transistor for a dynamic memory cell having improved capacitance

Also Published As

Publication number Publication date
FR2466101A1 (fr) 1981-03-27
EP0026686B1 (fr) 1983-05-11
US4420379A (en) 1983-12-13
DE3063148D1 (en) 1983-06-16
EP0026686A1 (fr) 1981-04-08
JPS5654072A (en) 1981-05-13

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Legal Events

Date Code Title Description
ST Notification of lapse