FR2465319B1 - - Google Patents

Info

Publication number
FR2465319B1
FR2465319B1 FR8019360A FR8019360A FR2465319B1 FR 2465319 B1 FR2465319 B1 FR 2465319B1 FR 8019360 A FR8019360 A FR 8019360A FR 8019360 A FR8019360 A FR 8019360A FR 2465319 B1 FR2465319 B1 FR 2465319B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8019360A
Other languages
French (fr)
Other versions
FR2465319A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eni SpA
Original Assignee
Eni SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eni SpA filed Critical Eni SpA
Publication of FR2465319A1 publication Critical patent/FR2465319A1/fr
Application granted granted Critical
Publication of FR2465319B1 publication Critical patent/FR2465319B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/006—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/064—Gp II-VI compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy
FR8019360A 1979-09-10 1980-09-08 Cellule photovoltaique Granted FR2465319A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT25569/79A IT1163710B (it) 1979-09-10 1979-09-10 Celle fotovoltaiche

Publications (2)

Publication Number Publication Date
FR2465319A1 FR2465319A1 (fr) 1981-03-20
FR2465319B1 true FR2465319B1 (enExample) 1985-03-08

Family

ID=11217123

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8019360A Granted FR2465319A1 (fr) 1979-09-10 1980-09-08 Cellule photovoltaique

Country Status (11)

Country Link
US (1) US4366337A (enExample)
JP (2) JPS5681980A (enExample)
AU (1) AU539090B2 (enExample)
BE (1) BE885167A (enExample)
CA (1) CA1168741A (enExample)
DE (1) DE3033203A1 (enExample)
DK (1) DK159349C (enExample)
FR (1) FR2465319A1 (enExample)
GB (1) GB2058452B (enExample)
IT (1) IT1163710B (enExample)
NL (1) NL8004990A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009111053A2 (en) * 2008-03-05 2009-09-11 Global Solar Energy, Inc. Buffer layer deposition for thin-film solar cells
US8277869B2 (en) * 2008-03-05 2012-10-02 Global Solar Energy, Inc. Heating for buffer layer deposition
DE212009000032U1 (de) 2008-03-05 2010-12-09 Global Solar Energy, Inc., Tuscon System zum Aufbringen einer Chalcogenid-Pufferschicht auf einen flexiblen Träger
US8609182B2 (en) * 2008-03-05 2013-12-17 Global Solar Energy, Inc. Solution containment during buffer layer deposition
US9252318B2 (en) 2008-03-05 2016-02-02 Hanergy Hi-Tech Power (Hk) Limited Solution containment during buffer layer deposition
US20160359070A1 (en) 2015-06-02 2016-12-08 International Business Machines Corporation Controllable indium doping for high efficiency czts thin-film solar cells
CN115295665A (zh) * 2022-07-08 2022-11-04 中山大学 一种采用无掺杂发射极的太阳电池及其制备方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3720125A (en) * 1971-08-02 1973-03-13 Whitney Corp W Adjustable stripper with stroke control
DE2214055A1 (de) * 1972-03-23 1973-09-27 Agfa Gevaert Ag Sensibilisierte elektrophotographische schichten

Also Published As

Publication number Publication date
AU6150380A (en) 1981-03-19
GB2058452A (en) 1981-04-08
IT7925569A0 (it) 1979-09-10
FR2465319A1 (fr) 1981-03-20
NL8004990A (nl) 1981-03-12
US4366337A (en) 1982-12-28
DK349780A (da) 1981-03-11
DK159349C (da) 1991-03-11
JPS5681980A (en) 1981-07-04
DE3033203A1 (de) 1981-03-19
GB2058452B (en) 1983-10-05
BE885167A (fr) 1981-03-10
JPH02748U (enExample) 1990-01-05
DK159349B (da) 1990-10-01
CA1168741A (en) 1984-06-05
AU539090B2 (en) 1984-09-13
IT1163710B (it) 1987-04-08

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Legal Events

Date Code Title Description
ST Notification of lapse