FR2463508A1 - Procede de realisation de contacts ohmiques sur une couche active de silicium amorphe hydrogene - Google Patents

Procede de realisation de contacts ohmiques sur une couche active de silicium amorphe hydrogene Download PDF

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Publication number
FR2463508A1
FR2463508A1 FR7920778A FR7920778A FR2463508A1 FR 2463508 A1 FR2463508 A1 FR 2463508A1 FR 7920778 A FR7920778 A FR 7920778A FR 7920778 A FR7920778 A FR 7920778A FR 2463508 A1 FR2463508 A1 FR 2463508A1
Authority
FR
France
Prior art keywords
amorphous silicon
hydrogen
hydrogenated amorphous
layer
ohmic contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7920778A
Other languages
English (en)
French (fr)
Other versions
FR2463508B1 (enExample
Inventor
Christian Bianchin
Jean-Claude Bruyere
Alain Deneuville
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bpifrance Financement SA
Original Assignee
Agence National de Valorisation de la Recherche ANVAR
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agence National de Valorisation de la Recherche ANVAR filed Critical Agence National de Valorisation de la Recherche ANVAR
Priority to FR7920778A priority Critical patent/FR2463508A1/fr
Publication of FR2463508A1 publication Critical patent/FR2463508A1/fr
Application granted granted Critical
Publication of FR2463508B1 publication Critical patent/FR2463508B1/fr
Granted legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H10F77/1662—Amorphous semiconductors including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D64/0111—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
FR7920778A 1979-08-16 1979-08-16 Procede de realisation de contacts ohmiques sur une couche active de silicium amorphe hydrogene Granted FR2463508A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7920778A FR2463508A1 (fr) 1979-08-16 1979-08-16 Procede de realisation de contacts ohmiques sur une couche active de silicium amorphe hydrogene

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7920778A FR2463508A1 (fr) 1979-08-16 1979-08-16 Procede de realisation de contacts ohmiques sur une couche active de silicium amorphe hydrogene

Publications (2)

Publication Number Publication Date
FR2463508A1 true FR2463508A1 (fr) 1981-02-20
FR2463508B1 FR2463508B1 (enExample) 1983-04-22

Family

ID=9228882

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7920778A Granted FR2463508A1 (fr) 1979-08-16 1979-08-16 Procede de realisation de contacts ohmiques sur une couche active de silicium amorphe hydrogene

Country Status (1)

Country Link
FR (1) FR2463508A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0162529A1 (en) * 1984-01-13 1985-11-27 The British Petroleum Company p.l.c. Amorphous or microcrystalline semiconductor memory device
EP0111899A3 (en) * 1982-12-16 1987-01-28 Hitachi, Ltd. Semiconductor device and method of manufacturing the same
EP0181681A3 (en) * 1984-07-16 1987-04-15 Xerox Corporation Ohmic contacts for hydrogenated amorphous silicon
US5360981A (en) * 1989-05-11 1994-11-01 British Telecommunications Public Limited Company Amorphous silicon memory

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2345810A1 (fr) * 1976-03-22 1977-10-21 Rca Corp Perfectionnements apportes aux dispositifs photovoltaiques et aux dispositifs redresseurs de courant

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2345810A1 (fr) * 1976-03-22 1977-10-21 Rca Corp Perfectionnements apportes aux dispositifs photovoltaiques et aux dispositifs redresseurs de courant

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/77 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0111899A3 (en) * 1982-12-16 1987-01-28 Hitachi, Ltd. Semiconductor device and method of manufacturing the same
EP0162529A1 (en) * 1984-01-13 1985-11-27 The British Petroleum Company p.l.c. Amorphous or microcrystalline semiconductor memory device
EP0181681A3 (en) * 1984-07-16 1987-04-15 Xerox Corporation Ohmic contacts for hydrogenated amorphous silicon
US5360981A (en) * 1989-05-11 1994-11-01 British Telecommunications Public Limited Company Amorphous silicon memory

Also Published As

Publication number Publication date
FR2463508B1 (enExample) 1983-04-22

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