FR2457605B2 - - Google Patents

Info

Publication number
FR2457605B2
FR2457605B2 FR7912910A FR7912910A FR2457605B2 FR 2457605 B2 FR2457605 B2 FR 2457605B2 FR 7912910 A FR7912910 A FR 7912910A FR 7912910 A FR7912910 A FR 7912910A FR 2457605 B2 FR2457605 B2 FR 2457605B2
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7912910A
Other languages
French (fr)
Other versions
FR2457605A2 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Gouvernement de la Republique Francaise
Original Assignee
Gouvernement de la Republique Francaise
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gouvernement de la Republique Francaise filed Critical Gouvernement de la Republique Francaise
Priority to FR7912910A priority Critical patent/FR2457605A2/fr
Priority to ES491626A priority patent/ES8201768A1/es
Priority to DE8080400702T priority patent/DE3060914D1/de
Priority to CA000352289A priority patent/CA1142269A/en
Priority to EP80400702A priority patent/EP0019560B1/fr
Priority to JP6658280A priority patent/JPS55156359A/ja
Publication of FR2457605A2 publication Critical patent/FR2457605A2/fr
Application granted granted Critical
Publication of FR2457605B2 publication Critical patent/FR2457605B2/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/09403—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors
    • H03K19/09414—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors with gate injection or static induction [STIL]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09441—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type
    • H03K19/09443—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type using a combination of enhancement and depletion transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/84—Combinations of enhancement-mode IGFETs and depletion-mode IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Logic Circuits (AREA)
FR7912910A 1979-05-21 1979-05-21 Perfectionnements aux portes logiques a transistors mos multidrains Granted FR2457605A2 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR7912910A FR2457605A2 (fr) 1979-05-21 1979-05-21 Perfectionnements aux portes logiques a transistors mos multidrains
ES491626A ES8201768A1 (es) 1979-05-21 1980-05-20 Perfeccionamientos introducidos en las puertas logicas de transistores.
DE8080400702T DE3060914D1 (en) 1979-05-21 1980-05-20 Multiple-drain mos transistor logic gates
CA000352289A CA1142269A (en) 1979-05-21 1980-05-20 Multidrain metal-oxide-semiconductor field-effects devices
EP80400702A EP0019560B1 (fr) 1979-05-21 1980-05-20 Perfectionnements aux portes logiques à transistors MOS multidrains
JP6658280A JPS55156359A (en) 1979-05-21 1980-05-21 Logic gate using multiidrain mos transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7912910A FR2457605A2 (fr) 1979-05-21 1979-05-21 Perfectionnements aux portes logiques a transistors mos multidrains

Publications (2)

Publication Number Publication Date
FR2457605A2 FR2457605A2 (fr) 1980-12-19
FR2457605B2 true FR2457605B2 (OSRAM) 1982-11-19

Family

ID=9225698

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7912910A Granted FR2457605A2 (fr) 1979-05-21 1979-05-21 Perfectionnements aux portes logiques a transistors mos multidrains

Country Status (6)

Country Link
EP (1) EP0019560B1 (OSRAM)
JP (1) JPS55156359A (OSRAM)
CA (1) CA1142269A (OSRAM)
DE (1) DE3060914D1 (OSRAM)
ES (1) ES8201768A1 (OSRAM)
FR (1) FR2457605A2 (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8401117A (nl) * 1984-04-09 1985-11-01 Philips Nv Halfgeleiderinrichting met veldeffekttransistors met geisoleerde poortelektrode.
US4684967A (en) * 1984-05-04 1987-08-04 Integrated Logic Systems, Inc. Low capacitance transistor cell element and transistor array
US4680484A (en) * 1984-10-19 1987-07-14 Trw Inc. Wired-AND FET logic gate
DE60037248T2 (de) * 2000-09-21 2008-10-09 Stmicroelectronics S.R.L., Agrate Brianza Laterale DMOS-Transistoranordnung

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5268382A (en) * 1975-12-05 1977-06-07 Hitachi Ltd Semiconductor circuit unit
JPS608628B2 (ja) * 1976-07-05 1985-03-04 ヤマハ株式会社 半導体集積回路装置

Also Published As

Publication number Publication date
CA1142269A (en) 1983-03-01
EP0019560A1 (fr) 1980-11-26
FR2457605A2 (fr) 1980-12-19
ES491626A0 (es) 1981-11-16
JPS55156359A (en) 1980-12-05
DE3060914D1 (en) 1982-11-11
ES8201768A1 (es) 1981-11-16
EP0019560B1 (fr) 1982-10-06

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