FR2457254A1 - SILICON PURIFICATION PROCESS - Google Patents

SILICON PURIFICATION PROCESS

Info

Publication number
FR2457254A1
FR2457254A1 FR8011626A FR8011626A FR2457254A1 FR 2457254 A1 FR2457254 A1 FR 2457254A1 FR 8011626 A FR8011626 A FR 8011626A FR 8011626 A FR8011626 A FR 8011626A FR 2457254 A1 FR2457254 A1 FR 2457254A1
Authority
FR
France
Prior art keywords
silicon
crystals
phase
melt
solid phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8011626A
Other languages
French (fr)
Other versions
FR2457254B1 (en
Inventor
Robert Kimball Dawless
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Howmet Aerospace Inc
Original Assignee
Aluminum Company of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/041,892 external-priority patent/US4256717A/en
Priority claimed from US06/042,016 external-priority patent/US4246249A/en
Application filed by Aluminum Company of America filed Critical Aluminum Company of America
Publication of FR2457254A1 publication Critical patent/FR2457254A1/en
Application granted granted Critical
Publication of FR2457254B1 publication Critical patent/FR2457254B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification

Abstract

L'INVENTION CONCERNE UN PROCEDE D'OBTENTION DE CRISTAUX DE SILICIUM PURIFIE, DANS LEQUEL ON PREPARE UNE MASSE DE MATERIAUX FONDUE RICHE EN SILICIUM ET ON EN EXTRAIT DE LA CHALEUR POUR FORMER UNE PHASE SOLIDE CONTENANT LE SILICIUM SOUS FORME CRISTALLISEE ET POUR CONCENTRER LES IMPURETES DANS LA PHASE FONDUE. LORSQUE SUFFISAMMENT DE CHALEUR A ETE EXTRAITE, ON SEPARE DE LA PHASE SOLIDE UNE PARTIE SUBSTANTIELLE DE LA PHASE FONDUE. UNE FRACTION DE LA PHASE SOLIDE EST REFONDUE POUR ENLEVER LE METAL SOLVANT, CONTENANT LES IMPURETES, DES CRISTAUX, ET ON SEPARE DES CRISTAUX AU MOINS UNE FRACTION DU MATERIAU REFONDU. CETTE REFUSION EST DE PREFERENCE EFFECTUEE PAR CHAUFFAGE PAR INDUCTION. LA FIGURE REPRESENTE LE DIAGRAMME DE PHASES DU SYSTEME SILICIUM-FER-ALUMINIUM, L'ALUMINIUM ETANT LE METAL SOLVANT PREFERE. LES CRISTAUX OBTENUS ONT UNE PURETE SUFFISANTE POUR DES UTILISATIONS DANS DES CELLULES SOLAIRES.THE INVENTION RELATES TO A PROCESS FOR OBTAINING PURIFIED SILICON CRYSTALS, IN WHICH A MASS OF MELTED MATERIALS RICH IN SILICON IS PREPARED AND HEAT IS EXTRACTED TO FORM A SOLID PHASE CONTAINING SILICON IN CRYSTALLIZED FORM AND TO CONCENTRATE THE IMPURES. IN THE MELTED PHASE. WHEN SUFFICIENT HEAT HAS BEEN EXTRACTED, A SUBSTANTIAL PART OF THE MELT PHASE IS SEPARATED FROM THE SOLID PHASE. A FRACTION OF THE SOLID PHASE IS MELT TO REMOVE THE SOLVENT METAL, CONTAINING IMPURITIES, CRYSTALS, AND AT LEAST ONE FRACTION OF THE MELT MATERIAL IS SEPARATED FROM THE CRYSTALS. THIS REFUSION IS PREFERREDLY CARRIED OUT BY INDUCTION HEATING. THE FIGURE REPRESENTS THE PHASE DIAGRAM OF THE SILICON-IRON-ALUMINUM SYSTEM, WITH ALUMINUM THE PREFERRED SOLVENT METAL. THE CRYSTALS OBTAINED HAVE SUFFICIENT PURITY FOR USE IN SOLAR CELLS.

FR8011626A 1979-05-24 1980-05-23 SILICON PURIFICATION PROCESS Granted FR2457254A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US4201779A 1979-05-24 1979-05-24
US06/041,892 US4256717A (en) 1979-05-24 1979-05-24 Silicon purification method
US06/042,016 US4246249A (en) 1979-05-24 1979-05-24 Silicon purification process

Publications (2)

Publication Number Publication Date
FR2457254A1 true FR2457254A1 (en) 1980-12-19
FR2457254B1 FR2457254B1 (en) 1981-12-04

Family

ID=27366012

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8011626A Granted FR2457254A1 (en) 1979-05-24 1980-05-23 SILICON PURIFICATION PROCESS

Country Status (8)

Country Link
AU (1) AU531384B2 (en)
BR (1) BR8003247A (en)
DE (1) DE3019875C2 (en)
FR (1) FR2457254A1 (en)
GB (1) GB2052461B (en)
MX (1) MX154222A (en)
NO (1) NO153846C (en)
SE (1) SE448164B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3150539A1 (en) * 1981-12-21 1983-06-30 Siemens AG, 1000 Berlin und 8000 München Process for producing silicon which can be used for semiconductor components, in particular for solar cells
MX2010002728A (en) * 2007-09-13 2010-08-02 Silicium Becancour Inc Process for the production of medium and high purity silicon from metallurgical grade silicon.
CN101855391B (en) * 2007-10-03 2014-10-29 希里科材料公司 Method for processing silicon powder to obtain silicon crystals
NO329987B1 (en) 2009-02-26 2011-01-31 Harsharn Tathgar Semi-Continuous Process for Formation, Separation and Melting of Large, Clean Silicon Crystals

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2471899A (en) * 1940-07-08 1949-05-31 Spolek Method of separating constituents of alloys by fractional crystallization

Also Published As

Publication number Publication date
NO153846B (en) 1986-02-24
FR2457254B1 (en) 1981-12-04
GB2052461B (en) 1983-04-07
AU531384B2 (en) 1983-08-18
SE8003840L (en) 1980-11-25
DE3019875A1 (en) 1980-11-27
AU5876880A (en) 1980-11-27
NO801559L (en) 1980-11-25
DE3019875C2 (en) 1986-01-02
BR8003247A (en) 1980-12-30
GB2052461A (en) 1981-01-28
SE448164B (en) 1987-01-26
MX154222A (en) 1987-06-19
NO153846C (en) 1986-06-04

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Legal Events

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