FR2452790B3 - - Google Patents
Info
- Publication number
- FR2452790B3 FR2452790B3 FR8006953A FR8006953A FR2452790B3 FR 2452790 B3 FR2452790 B3 FR 2452790B3 FR 8006953 A FR8006953 A FR 8006953A FR 8006953 A FR8006953 A FR 8006953A FR 2452790 B3 FR2452790 B3 FR 2452790B3
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
- G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
- G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
- G11C19/186—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
- H01L23/556—Protection against radiation, e.g. light or electromagnetic waves against alpha rays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0805—Capacitors only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19792912439 DE2912439A1 (en) | 1979-03-29 | 1979-03-29 | INTEGRATED SEMICONDUCTOR CIRCUIT WITH INTEGRATED STORAGE CAPACITY |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2452790A1 FR2452790A1 (en) | 1980-10-24 |
FR2452790B3 true FR2452790B3 (en) | 1981-12-31 |
Family
ID=6066777
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8006953A Granted FR2452790A1 (en) | 1979-03-29 | 1980-03-28 | INTEGRATED SEMICONDUCTOR CIRCUIT COMPRISING INTEGRATED MEMORY CAPACITORS |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS55146958A (en) |
DE (1) | DE2912439A1 (en) |
FR (1) | FR2452790A1 (en) |
GB (1) | GB2045526A (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0033159B1 (en) * | 1980-01-29 | 1984-05-02 | Nec Corporation | Semiconductor device |
JPS5797682A (en) * | 1980-12-10 | 1982-06-17 | Clarion Co Ltd | Variable capacitance device |
DE3128014A1 (en) * | 1981-07-15 | 1983-02-03 | Siemens AG, 1000 Berlin und 8000 München | ARRANGEMENT FOR REDUCING THE SENSITIVITY OF INTEGRATED SEMICONDUCTOR MEMORY AGAINST ALPHA RADIATION |
FR2526225B1 (en) * | 1982-04-30 | 1985-11-08 | Radiotechnique Compelec | METHOD FOR PRODUCING AN INTEGRATED CAPACITOR, AND DEVICE THUS OBTAINED |
FR2530077A1 (en) * | 1982-07-09 | 1984-01-13 | Radiotechnique Compelec | METHOD FOR PRODUCING INTEGRATED CAPACITORS IN A MICROELECTRONIC STRUCTURE |
US5508881A (en) * | 1994-02-01 | 1996-04-16 | Quality Microcircuits Corporation | Capacitors and interconnect lines for use with integrated circuits |
EP0893831A1 (en) | 1997-07-23 | 1999-01-27 | STMicroelectronics S.r.l. | High voltage capacitor |
-
1979
- 1979-03-29 DE DE19792912439 patent/DE2912439A1/en not_active Withdrawn
-
1980
- 1980-03-27 GB GB8010299A patent/GB2045526A/en not_active Withdrawn
- 1980-03-28 JP JP3912580A patent/JPS55146958A/en active Pending
- 1980-03-28 FR FR8006953A patent/FR2452790A1/en active Granted
Also Published As
Publication number | Publication date |
---|---|
FR2452790A1 (en) | 1980-10-24 |
DE2912439A1 (en) | 1980-10-16 |
JPS55146958A (en) | 1980-11-15 |
GB2045526A (en) | 1980-10-29 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |