FR2449377B1 - - Google Patents
Info
- Publication number
- FR2449377B1 FR2449377B1 FR8003362A FR8003362A FR2449377B1 FR 2449377 B1 FR2449377 B1 FR 2449377B1 FR 8003362 A FR8003362 A FR 8003362A FR 8003362 A FR8003362 A FR 8003362A FR 2449377 B1 FR2449377 B1 FR 2449377B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54017340A JPS6033340B2 (ja) | 1979-02-19 | 1979-02-19 | 固体撮像装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2449377A1 FR2449377A1 (fr) | 1980-09-12 |
| FR2449377B1 true FR2449377B1 (US07122603-20061017-C00294.png) | 1981-04-17 |
Family
ID=11941316
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8003362A Granted FR2449377A1 (fr) | 1979-02-19 | 1980-02-15 | Dispositif de formation d'image a semi-conducteur |
Country Status (7)
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2943143A1 (de) * | 1979-10-25 | 1981-05-07 | Siemens AG, 1000 Berlin und 8000 München | Infrarotempfindler x-y-ccd-sensor und verfahren zu seiner herstellung |
| JPS5771172A (en) * | 1980-10-22 | 1982-05-01 | Hitachi Ltd | Solid state image pick-up element and manufacture thereof |
| JPS57108363U (US07122603-20061017-C00294.png) * | 1980-12-24 | 1982-07-03 | ||
| JPS57173274A (en) * | 1981-04-17 | 1982-10-25 | Nec Corp | Solid-state image pickup device |
| JPS589361A (ja) * | 1981-07-08 | 1983-01-19 | Hitachi Ltd | 固体撮像素子 |
| JPS5850873A (ja) * | 1981-09-21 | 1983-03-25 | Nec Corp | 高感度固体撮像装置およびその駆動法 |
| JPS59196669A (ja) * | 1983-04-22 | 1984-11-08 | Matsushita Electronics Corp | 固体撮像装置 |
| JPS59211262A (ja) * | 1983-05-16 | 1984-11-30 | Fuji Photo Film Co Ltd | 放射線像検出器およびそれを用いた放射線像検出方法 |
| JPS6043857A (ja) * | 1983-08-20 | 1985-03-08 | Mitsubishi Electric Corp | 固体撮像装置とその製造方法 |
| JPS59130468A (ja) * | 1983-12-14 | 1984-07-27 | Hitachi Ltd | 固体撮像装置 |
| JP2594992B2 (ja) * | 1987-12-04 | 1997-03-26 | 株式会社日立製作所 | 固体撮像装置 |
| JP2576766B2 (ja) * | 1993-07-08 | 1997-01-29 | 日本電気株式会社 | 半導体基板の製造方法 |
| JPH07177256A (ja) * | 1993-12-21 | 1995-07-14 | Murata Mach Ltd | 付属電話機を備えたファクシミリ装置 |
| US6198148B1 (en) * | 1998-12-08 | 2001-03-06 | United Microelectronics Corp. | Photodiode |
| TW494574B (en) * | 1999-12-01 | 2002-07-11 | Innotech Corp | Solid state imaging device, method of manufacturing the same, and solid state imaging system |
| KR100464949B1 (ko) * | 2000-08-31 | 2005-01-05 | 매그나칩 반도체 유한회사 | 포토다이오드의 표면 특성을 향상시킬 수 있는 이미지센서 제조 방법 |
| JP4251326B2 (ja) * | 2004-03-30 | 2009-04-08 | サンケン電気株式会社 | 半導体装置 |
| FR2935839B1 (fr) * | 2008-09-05 | 2011-08-05 | Commissariat Energie Atomique | Capteur d'images cmos a reflexion lumineuse |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5323224A (en) * | 1976-08-16 | 1978-03-03 | Hitachi Ltd | Solid pickup unit |
| GB1595253A (en) * | 1977-01-24 | 1981-08-12 | Hitachi Ltd | Solid-state imaging devices |
| JPS5396720A (en) * | 1977-02-04 | 1978-08-24 | Hitachi Ltd | Solid image pickup element |
| JPS6017196B2 (ja) * | 1978-01-23 | 1985-05-01 | 株式会社日立製作所 | 固体撮像素子 |
-
1979
- 1979-02-19 JP JP54017340A patent/JPS6033340B2/ja not_active Expired
-
1980
- 1980-02-07 US US06/119,383 patent/US4316205A/en not_active Expired - Lifetime
- 1980-02-15 NL NL8000961A patent/NL8000961A/nl not_active Application Discontinuation
- 1980-02-15 DE DE19803005766 patent/DE3005766A1/de not_active Ceased
- 1980-02-15 FR FR8003362A patent/FR2449377A1/fr active Granted
- 1980-02-18 GB GB8005426A patent/GB2046015B/en not_active Expired
- 1980-02-19 CA CA345,979A patent/CA1128197A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| NL8000961A (nl) | 1980-08-21 |
| US4316205A (en) | 1982-02-16 |
| GB2046015A (en) | 1980-11-05 |
| JPS55110476A (en) | 1980-08-25 |
| CA1128197A (en) | 1982-07-20 |
| GB2046015B (en) | 1983-05-11 |
| JPS6033340B2 (ja) | 1985-08-02 |
| FR2449377A1 (fr) | 1980-09-12 |
| DE3005766A1 (de) | 1980-08-21 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |