FR2435817A1 - Procede pour faire diffuser de l'aluminium dans une pastille de semi-conducteur - Google Patents

Procede pour faire diffuser de l'aluminium dans une pastille de semi-conducteur

Info

Publication number
FR2435817A1
FR2435817A1 FR7922173A FR7922173A FR2435817A1 FR 2435817 A1 FR2435817 A1 FR 2435817A1 FR 7922173 A FR7922173 A FR 7922173A FR 7922173 A FR7922173 A FR 7922173A FR 2435817 A1 FR2435817 A1 FR 2435817A1
Authority
FR
France
Prior art keywords
tube
aluminum
semiconductor pellet
source
diffusing aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7922173A
Other languages
English (en)
French (fr)
Other versions
FR2435817B1 (US07642317-20100105-C00010.png
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of FR2435817A1 publication Critical patent/FR2435817A1/fr
Application granted granted Critical
Publication of FR2435817B1 publication Critical patent/FR2435817B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/033—Diffusion of aluminum
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y10S252/951—Doping agent source material for vapor transport
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/909—Controlled atmosphere

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Die Bonding (AREA)
FR7922173A 1978-09-05 1979-09-05 Procede pour faire diffuser de l'aluminium dans une pastille de semi-conducteur Granted FR2435817A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/939,669 US4235650A (en) 1978-09-05 1978-09-05 Open tube aluminum diffusion

Publications (2)

Publication Number Publication Date
FR2435817A1 true FR2435817A1 (fr) 1980-04-04
FR2435817B1 FR2435817B1 (US07642317-20100105-C00010.png) 1984-10-19

Family

ID=25473553

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7922173A Granted FR2435817A1 (fr) 1978-09-05 1979-09-05 Procede pour faire diffuser de l'aluminium dans une pastille de semi-conducteur

Country Status (5)

Country Link
US (1) US4235650A (US07642317-20100105-C00010.png)
JP (1) JPS5548925A (US07642317-20100105-C00010.png)
DE (1) DE2931432C2 (US07642317-20100105-C00010.png)
FR (1) FR2435817A1 (US07642317-20100105-C00010.png)
GB (1) GB2034113B (US07642317-20100105-C00010.png)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0061787B1 (de) * 1981-03-02 1985-11-21 BBC Aktiengesellschaft Brown, Boveri & Cie. Verfahren zum Dotieren von Trägern aus Silicium für die Halbleiterfertigung
JPS60120799U (ja) * 1984-01-21 1985-08-15 シ−　チン−ヤン 回転式高速自動スライサ−
US4740249A (en) * 1984-05-21 1988-04-26 Christopher F. McConnell Method of treating wafers with fluid
US4633893A (en) * 1984-05-21 1987-01-06 Cfm Technologies Limited Partnership Apparatus for treating semiconductor wafers
US4577650A (en) * 1984-05-21 1986-03-25 Mcconnell Christopher F Vessel and system for treating wafers with fluids
US4738272A (en) * 1984-05-21 1988-04-19 Mcconnell Christopher F Vessel and system for treating wafers with fluids
US4856544A (en) * 1984-05-21 1989-08-15 Cfm Technologies, Inc. Vessel and system for treating wafers with fluids
KR890001502B1 (ko) * 1985-06-24 1989-05-06 씨.에프.엠 테크늘러지즈 인코포레이티드 반도체 웨이퍼 흐름 처리공정 및 그 장치
DE3782608D1 (de) * 1986-09-30 1992-12-17 Siemens Ag Verfahren zum erzeugen eines p-dotierten halbleitergebiets in einem n-leitenden halbleiterkoerper.
JP3209426B2 (ja) 1991-10-04 2001-09-17 シーエフエムティ インコーポレイテッド 複雑な形状を有するマイクロパーツの洗浄
US6328809B1 (en) 1998-10-09 2001-12-11 Scp Global Technologies, Inc. Vapor drying system and method
FI117728B (fi) * 2004-12-21 2007-01-31 Planar Systems Oy Monikerrosmateriaali ja menetelmä sen valmistamiseksi
JP2012119453A (ja) * 2010-11-30 2012-06-21 Mitsubishi Electric Corp 不純物拡散装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU326915A1 (US07642317-20100105-C00010.png) * 1970-04-06 1974-06-15 Н. П. Молибог, А. Н. Думаневич, В. Е. Челноков, Н. И. Якивчик, Н. П. Сахарова , В. В. Толкунов

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3374125A (en) * 1965-05-10 1968-03-19 Rca Corp Method of forming a pn junction by vaporization
US3589953A (en) * 1968-02-14 1971-06-29 Gen Motors Corp Vapor diffusion system for semiconductors
GB1199399A (en) * 1968-06-21 1970-07-22 Matsushita Electronics Corp Improvements in or relating to the Manufacture of Semiconductors.
US3852128A (en) * 1969-02-22 1974-12-03 Licentia Gmbh Method of diffusing impurities into semiconductor wafers
US3972838A (en) * 1973-11-01 1976-08-03 Denki Kagaku Kogyo Kabushiki Kaisha Composition for diffusing phosphorus
US3997379A (en) * 1975-06-20 1976-12-14 Rca Corporation Diffusion of conductivity modifiers into a semiconductor body
CA1065498A (en) * 1975-10-07 1979-10-30 Rathindra N. Ghoshtagore Open tube gallium diffusion process for semiconductor devices

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU326915A1 (US07642317-20100105-C00010.png) * 1970-04-06 1974-06-15 Н. П. Молибог, А. Н. Думаневич, В. Е. Челноков, Н. И. Якивчик, Н. П. Сахарова , В. В. Толкунов

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
CA1975 *

Also Published As

Publication number Publication date
DE2931432C2 (de) 1987-04-02
GB2034113B (en) 1983-04-13
JPS5548925A (en) 1980-04-08
US4235650A (en) 1980-11-25
JPS6119101B2 (US07642317-20100105-C00010.png) 1986-05-15
DE2931432A1 (de) 1980-03-20
GB2034113A (en) 1980-05-29
FR2435817B1 (US07642317-20100105-C00010.png) 1984-10-19

Similar Documents

Publication Publication Date Title
FR2435817A1 (fr) Procede pour faire diffuser de l'aluminium dans une pastille de semi-conducteur
EP0363437A1 (en) HEATING SYSTEM FOR A REACTION CHAMBER OF A GAS PHASE DEPOSITION EQUIPMENT BY CHEMICAL PROCESS.
GB1230051A (US07642317-20100105-C00010.png)
OA08978A (fr) Procédés et dispositifs permettant de traiter thermiquement des fils d'acier au carbone de façon à obtenir une structure perlitique fine
Stross et al. 49. The diffusion coefficient of hydrogen in iron
FR2354795A1 (fr) Procede et dispositif pour extraire des composants volatilisables d'un liquide
US6315828B1 (en) Continuous oxidation process for crystal pulling apparatus
FR2363767A1 (fr) Procede et dispositif pour l'evacuation du surplus de chaleur d'un panneau solaire
FR2360374A1 (fr) Procede de soudage de pieces au moyen d'un faisceau d'energie
JPS5265662A (en) Method and device for diffusion to semiconductor substrate by high fre quency induction heating
US4419332A (en) Epitaxial reactor
FR2399636A1 (fr) Procede et dispositif pour le refroidissement de tuyaux coudes d'evacuation des gaz de fumees
GB949649A (en) Improvements in or relating to methods and apparatus for forming semi-conductor materials
CA1061225A (en) Method of diffusing impurities in semiconductor bodies
GB1207748A (en) DOUBLE DEPOSITIONS OF BBr3, IN SILICON
Chang et al. Open Tube Aluminum Diffusion
FR2436496A1 (fr) Procede de diffusion d'aluminium en tube ouvert engendrant simultanement une diffusion d'isolation plus profonde
ATE255721T1 (de) Dichtigkeitskontrolle der strahlungsrohre in industrieöfen
US20110222057A1 (en) Method and device for measuring a chemical composition of a liquid metal suitable for coating a steel strip
DE3218974A1 (de) Leiterverbindungsschicht fuer halbleitervorrichtungen und verfahren zu ihrer herstellung
JPS56161683A (en) Manufacture of light emitting element
ES436789A1 (es) Procedimiento para recubrir con metal tubos de acero de pe- queno diametro.
JPS5512711A (en) Vacuum diffusing device for semiconductor substrate
FR3139144B1 (fr) Procédé de dépôt d'un revêtement en oxyde d'aluminium
JPS5656643A (en) Treating device for semiconductor substrate

Legal Events

Date Code Title Description
ST Notification of lapse