FR2435817A1 - Procede pour faire diffuser de l'aluminium dans une pastille de semi-conducteur - Google Patents
Procede pour faire diffuser de l'aluminium dans une pastille de semi-conducteurInfo
- Publication number
- FR2435817A1 FR2435817A1 FR7922173A FR7922173A FR2435817A1 FR 2435817 A1 FR2435817 A1 FR 2435817A1 FR 7922173 A FR7922173 A FR 7922173A FR 7922173 A FR7922173 A FR 7922173A FR 2435817 A1 FR2435817 A1 FR 2435817A1
- Authority
- FR
- France
- Prior art keywords
- tube
- aluminum
- semiconductor pellet
- source
- diffusing aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title abstract 2
- 229910052782 aluminium Inorganic materials 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 239000008188 pellet Substances 0.000 title abstract 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-OUBTZVSYSA-N aluminium-28 atom Chemical compound [28Al] XAGFODPZIPBFFR-OUBTZVSYSA-N 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/033—Diffusion of aluminum
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S252/00—Compositions
- Y10S252/95—Doping agent source material
- Y10S252/951—Doping agent source material for vapor transport
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/909—Controlled atmosphere
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Die Bonding (AREA)
Abstract
Procédé permettant un temps de diffusion plus court Il comprend la mise en place d'une source d'aluminium 28, 30 dans le tube 12, la source étant espacée de la pastille 24; l'établissement d'un courant d'un gaz inerte non oxydant à travers le tube, à un débit suffisant pour empêcher l'atmosphère ambiante de pénétrer dans le tube, et le chauffage du tube à une température suffisante pour produire une vapeur d'aluminium dans le tube et faire diffuser les atomes d'aluminium dans la pastille de semi-conducteur. Application à la fabrication de dispositifs semi-conducteurs.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/939,669 US4235650A (en) | 1978-09-05 | 1978-09-05 | Open tube aluminum diffusion |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2435817A1 true FR2435817A1 (fr) | 1980-04-04 |
FR2435817B1 FR2435817B1 (fr) | 1984-10-19 |
Family
ID=25473553
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7922173A Granted FR2435817A1 (fr) | 1978-09-05 | 1979-09-05 | Procede pour faire diffuser de l'aluminium dans une pastille de semi-conducteur |
Country Status (5)
Country | Link |
---|---|
US (1) | US4235650A (fr) |
JP (1) | JPS5548925A (fr) |
DE (1) | DE2931432C2 (fr) |
FR (1) | FR2435817A1 (fr) |
GB (1) | GB2034113B (fr) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0061787B1 (fr) * | 1981-03-02 | 1985-11-21 | BBC Aktiengesellschaft Brown, Boveri & Cie. | Procédé pour le dopage de corps semiconducteurs pour la fabrication de dispositifs semiconducteurs |
JPS60120799U (ja) * | 1984-01-21 | 1985-08-15 | シ− チン−ヤン | 回転式高速自動スライサ− |
US4738272A (en) * | 1984-05-21 | 1988-04-19 | Mcconnell Christopher F | Vessel and system for treating wafers with fluids |
US4856544A (en) * | 1984-05-21 | 1989-08-15 | Cfm Technologies, Inc. | Vessel and system for treating wafers with fluids |
US4740249A (en) * | 1984-05-21 | 1988-04-26 | Christopher F. McConnell | Method of treating wafers with fluid |
US4577650A (en) * | 1984-05-21 | 1986-03-25 | Mcconnell Christopher F | Vessel and system for treating wafers with fluids |
US4633893A (en) * | 1984-05-21 | 1987-01-06 | Cfm Technologies Limited Partnership | Apparatus for treating semiconductor wafers |
KR890001502B1 (ko) * | 1985-06-24 | 1989-05-06 | 씨.에프.엠 테크늘러지즈 인코포레이티드 | 반도체 웨이퍼 흐름 처리공정 및 그 장치 |
DE3782608D1 (de) * | 1986-09-30 | 1992-12-17 | Siemens Ag | Verfahren zum erzeugen eines p-dotierten halbleitergebiets in einem n-leitenden halbleiterkoerper. |
ATE258084T1 (de) * | 1991-10-04 | 2004-02-15 | Cfmt Inc | Superreinigung von komplizierten mikroteilchen |
US6328809B1 (en) | 1998-10-09 | 2001-12-11 | Scp Global Technologies, Inc. | Vapor drying system and method |
FI117728B (fi) * | 2004-12-21 | 2007-01-31 | Planar Systems Oy | Monikerrosmateriaali ja menetelmä sen valmistamiseksi |
JP2012119453A (ja) * | 2010-11-30 | 2012-06-21 | Mitsubishi Electric Corp | 不純物拡散装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SU326915A1 (fr) * | 1970-04-06 | 1974-06-15 | Н. П. Молибог, А. Н. Думаневич, В. Е. Челноков, Н. И. Якивчик, Н. П. Сахарова , В. В. Толкунов |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3374125A (en) * | 1965-05-10 | 1968-03-19 | Rca Corp | Method of forming a pn junction by vaporization |
US3589953A (en) * | 1968-02-14 | 1971-06-29 | Gen Motors Corp | Vapor diffusion system for semiconductors |
GB1199399A (en) * | 1968-06-21 | 1970-07-22 | Matsushita Electronics Corp | Improvements in or relating to the Manufacture of Semiconductors. |
US3852128A (en) * | 1969-02-22 | 1974-12-03 | Licentia Gmbh | Method of diffusing impurities into semiconductor wafers |
US3972838A (en) * | 1973-11-01 | 1976-08-03 | Denki Kagaku Kogyo Kabushiki Kaisha | Composition for diffusing phosphorus |
US3997379A (en) * | 1975-06-20 | 1976-12-14 | Rca Corporation | Diffusion of conductivity modifiers into a semiconductor body |
CA1065498A (fr) * | 1975-10-07 | 1979-10-30 | Rathindra N. Ghoshtagore | Procede de diffusion de gallium dans un materiau semiconducteur au moyen d'un four a tube ouvert |
-
1978
- 1978-09-05 US US05/939,669 patent/US4235650A/en not_active Expired - Lifetime
-
1979
- 1979-07-12 GB GB7924375A patent/GB2034113B/en not_active Expired
- 1979-08-02 DE DE2931432A patent/DE2931432C2/de not_active Expired
- 1979-09-04 JP JP11247379A patent/JPS5548925A/ja active Granted
- 1979-09-05 FR FR7922173A patent/FR2435817A1/fr active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SU326915A1 (fr) * | 1970-04-06 | 1974-06-15 | Н. П. Молибог, А. Н. Думаневич, В. Е. Челноков, Н. И. Якивчик, Н. П. Сахарова , В. В. Толкунов |
Non-Patent Citations (1)
Title |
---|
CA1975 * |
Also Published As
Publication number | Publication date |
---|---|
GB2034113B (en) | 1983-04-13 |
US4235650A (en) | 1980-11-25 |
JPS6119101B2 (fr) | 1986-05-15 |
JPS5548925A (en) | 1980-04-08 |
DE2931432A1 (de) | 1980-03-20 |
GB2034113A (en) | 1980-05-29 |
FR2435817B1 (fr) | 1984-10-19 |
DE2931432C2 (de) | 1987-04-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |