EP0363437A1 - Heating system for reaction chamber of chemical vapor deposition equipment. - Google Patents

Heating system for reaction chamber of chemical vapor deposition equipment.

Info

Publication number
EP0363437A1
EP0363437A1 EP88906646A EP88906646A EP0363437A1 EP 0363437 A1 EP0363437 A1 EP 0363437A1 EP 88906646 A EP88906646 A EP 88906646A EP 88906646 A EP88906646 A EP 88906646A EP 0363437 A1 EP0363437 A1 EP 0363437A1
Authority
EP
European Patent Office
Prior art keywords
heating system
treatment cycle
reaction chamber
deposition equipment
vapor deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP88906646A
Other languages
German (de)
French (fr)
Other versions
EP0363437A4 (en
EP0363437B1 (en
Inventor
Mcdonald Robinson
Albert E Ozias
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Semiconductor Materials America Inc
Original Assignee
Epsilon Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epsilon Technology Inc filed Critical Epsilon Technology Inc
Publication of EP0363437A1 publication Critical patent/EP0363437A1/en
Publication of EP0363437A4 publication Critical patent/EP0363437A4/en
Application granted granted Critical
Publication of EP0363437B1 publication Critical patent/EP0363437B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Dans un système de chauffage destiné à être utilisé dans un équipement de déposition en phase gazeuse par procédé chimique, un gaz réactif est dirigé dans un flux horizontal pour permettre le dépôt de matériaux sur un substrat maintenu dans une chambre de réaction (10) sur une base (''susceptor'') (20) à entraînement rotatif, de façon à faire tourner le substrat autour d'un axe qui s'étend perpendiculairement à son centre. Le système de chauffage agit conjointement avec un agencement spécial de détection thermique et comprend un assemblage d'élément chauffant supérieur (32), un assemblage d'élément chauffant inférieur (34) ainsi qu'un mécanisme de concentration thermique (36) qui travaille en interaction, afin de permettre une accumulation rapide de température au début du cycle de traitement, une atténuation rapide de température à la fin du cycle de traitement et une courbe de température plate soumise à régulation durant le cycle de traitement.In a heating system for use in gas-phase chemical deposition equipment, a reactive gas is directed in a horizontal flow to allow the deposition of materials on a substrate held in a reaction chamber (10) on a base (“susceptor”) (20) with rotary drive, so as to rotate the substrate around an axis which extends perpendicular to its center. The heating system acts in conjunction with a special thermal sensing arrangement and includes an upper heating element assembly (32), a lower heating element assembly (34) and a heat concentrating mechanism (36) which operates in interaction, to allow rapid temperature accumulation at the start of the treatment cycle, rapid temperature attenuation at the end of the treatment cycle and a flat temperature curve subject to regulation during the treatment cycle.

EP88906646A 1987-06-18 1988-06-17 Heating system for reaction chamber of chemical vapor deposition equipment Expired - Lifetime EP0363437B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US07/063,409 US4836138A (en) 1987-06-18 1987-06-18 Heating system for reaction chamber of chemical vapor deposition equipment
US63409 1987-06-18
PCT/US1988/002117 WO1988010322A1 (en) 1987-06-18 1988-06-17 Heating system for reaction chamber of chemical vapor deposition equipment

Publications (3)

Publication Number Publication Date
EP0363437A1 true EP0363437A1 (en) 1990-04-18
EP0363437A4 EP0363437A4 (en) 1990-11-28
EP0363437B1 EP0363437B1 (en) 1994-12-28

Family

ID=22049003

Family Applications (1)

Application Number Title Priority Date Filing Date
EP88906646A Expired - Lifetime EP0363437B1 (en) 1987-06-18 1988-06-17 Heating system for reaction chamber of chemical vapor deposition equipment

Country Status (8)

Country Link
US (1) US4836138A (en)
EP (1) EP0363437B1 (en)
JP (1) JPH07100863B2 (en)
AT (1) ATE116381T1 (en)
DE (1) DE3852642T2 (en)
HK (1) HK76095A (en)
SG (1) SG38910G (en)
WO (1) WO1988010322A1 (en)

Families Citing this family (91)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5221556A (en) * 1987-06-24 1993-06-22 Epsilon Technology, Inc. Gas injectors for reaction chambers in CVD systems
US5517005A (en) * 1988-05-19 1996-05-14 Quadlux, Inc. Visible light and infra-red cooking apparatus
US5160545A (en) * 1989-02-03 1992-11-03 Applied Materials, Inc. Method and apparatus for epitaxial deposition
US6016383A (en) * 1990-01-19 2000-01-18 Applied Materials, Inc. Rapid thermal heating apparatus and method including an infrared camera to measure substrate temperature
US5155336A (en) * 1990-01-19 1992-10-13 Applied Materials, Inc. Rapid thermal heating apparatus and method
US5108792A (en) * 1990-03-09 1992-04-28 Applied Materials, Inc. Double-dome reactor for semiconductor processing
JP2728766B2 (en) * 1990-07-18 1998-03-18 株式会社東芝 Semiconductor processing method and apparatus
US5179677A (en) * 1990-08-16 1993-01-12 Applied Materials, Inc. Apparatus and method for substrate heating utilizing various infrared means to achieve uniform intensity
US5044943A (en) * 1990-08-16 1991-09-03 Applied Materials, Inc. Spoked susceptor support for enhanced thermal uniformity of susceptor in semiconductor wafer processing apparatus
US5446825A (en) * 1991-04-24 1995-08-29 Texas Instruments Incorporated High performance multi-zone illuminator module for semiconductor wafer processing
US5359693A (en) * 1991-07-15 1994-10-25 Ast Elektronik Gmbh Method and apparatus for a rapid thermal processing of delicate components
DE4223133A1 (en) * 1991-07-15 1993-01-21 T Elektronik Gmbh As Rapid thermal processing of sensitive devices - using heat source programme control to avoid defects in e.g. semiconductor devices
CA2069132C (en) * 1991-08-29 1996-01-09 Koji Fujii Light-beam heating apparatus
DE4130337C2 (en) * 1991-09-12 2002-05-02 Ego Elektro Blanc & Fischer Method for operating an electric heating unit and electric heating unit
US5332442A (en) * 1991-11-15 1994-07-26 Tokyo Electron Kabushiki Kaisha Surface processing apparatus
US5268989A (en) * 1992-04-16 1993-12-07 Texas Instruments Incorporated Multi zone illuminator with embeded process control sensors and light interference elimination circuit
US5534072A (en) * 1992-06-24 1996-07-09 Anelva Corporation Integrated module multi-chamber CVD processing system and its method for processing subtrates
KR100241290B1 (en) * 1992-07-09 2000-03-02 야마시타 히데나리 Semiconductor processing apparatus
JPH06244269A (en) * 1992-09-07 1994-09-02 Mitsubishi Electric Corp Semiconductor manufacturing apparatus, wafer vacuum chuck device thereof, and gas cleaning and nitride film formation therefor
US5444217A (en) * 1993-01-21 1995-08-22 Moore Epitaxial Inc. Rapid thermal processing apparatus for processing semiconductor wafers
US5820686A (en) * 1993-01-21 1998-10-13 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
US5580388A (en) * 1993-01-21 1996-12-03 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
BE1006988A3 (en) * 1993-04-13 1995-02-07 Imec Inter Uni Micro Electr Device for use in the field of rapid thermal annealing techniques
US5650082A (en) * 1993-10-29 1997-07-22 Applied Materials, Inc. Profiled substrate heating
US5504831A (en) * 1993-11-10 1996-04-02 Micron Semiconductor, Inc. System for compensating against wafer edge heat loss in rapid thermal processing
US5444815A (en) * 1993-12-16 1995-08-22 Texas Instruments Incorporated Multi-zone lamp interference correction system
FI100409B (en) * 1994-11-28 1997-11-28 Asm Int Method and apparatus for making thin films
US5830277A (en) * 1995-05-26 1998-11-03 Mattson Technology, Inc. Thermal processing system with supplemental resistive heater and shielded optical pyrometry
EP1050602B1 (en) * 1995-08-03 2004-05-26 ASM America, Inc. Process chamber with inner support
US6093252A (en) * 1995-08-03 2000-07-25 Asm America, Inc. Process chamber with inner support
US5551985A (en) * 1995-08-18 1996-09-03 Torrex Equipment Corporation Method and apparatus for cold wall chemical vapor deposition
US5997588A (en) * 1995-10-13 1999-12-07 Advanced Semiconductor Materials America, Inc. Semiconductor processing system with gas curtain
US5805769A (en) * 1996-03-21 1998-09-08 Amana Company, L.P. Adjustable ellipsoidal reflector for food heating apparatus
US6072160A (en) * 1996-06-03 2000-06-06 Applied Materials, Inc. Method and apparatus for enhancing the efficiency of radiant energy sources used in rapid thermal processing of substrates by energy reflection
US5879459A (en) * 1997-08-29 1999-03-09 Genus, Inc. Vertically-stacked process reactor and cluster tool system for atomic layer deposition
US6217662B1 (en) 1997-03-24 2001-04-17 Cree, Inc. Susceptor designs for silicon carbide thin films
US5792273A (en) * 1997-05-27 1998-08-11 Memc Electric Materials, Inc. Secondary edge reflector for horizontal reactor
US5960158A (en) * 1997-07-11 1999-09-28 Ag Associates Apparatus and method for filtering light in a thermal processing chamber
US5990454A (en) 1997-09-23 1999-11-23 Quadlux, Inc. Lightwave oven and method of cooking therewith having multiple cook modes and sequential lamp operation
US5958271A (en) 1997-09-23 1999-09-28 Quadlux, Inc. Lightwave oven and method of cooking therewith with cookware reflectivity compensation
US6013900A (en) 1997-09-23 2000-01-11 Quadlux, Inc. High efficiency lightwave oven
WO1999023690A1 (en) 1997-11-03 1999-05-14 Asm America, Inc. Method of processing wafers with low mass support
US5930456A (en) * 1998-05-14 1999-07-27 Ag Associates Heating device for semiconductor wafers
US5970214A (en) * 1998-05-14 1999-10-19 Ag Associates Heating device for semiconductor wafers
US6210484B1 (en) 1998-09-09 2001-04-03 Steag Rtp Systems, Inc. Heating device containing a multi-lamp cone for heating semiconductor wafers
WO2000031777A1 (en) * 1998-11-20 2000-06-02 Steag Rtp Systems, Inc. Fast heating and cooling apparatus for semiconductor wafers
US6771895B2 (en) * 1999-01-06 2004-08-03 Mattson Technology, Inc. Heating device for heating semiconductor wafers in thermal processing chambers
US6281141B1 (en) 1999-02-08 2001-08-28 Steag Rtp Systems, Inc. Process for forming thin dielectric layers in semiconductor devices
FI118342B (en) 1999-05-10 2007-10-15 Asm Int Apparatus for making thin films
TW411033U (en) * 1999-05-12 2000-11-01 Nat Science Council Reflector structure for improving irradiation uniformity of liner lamp array
US6485603B1 (en) * 1999-07-01 2002-11-26 Applied Materials, Inc. Method and apparatus for conserving energy within a process chamber
US6383330B1 (en) 1999-09-10 2002-05-07 Asm America, Inc. Quartz wafer processing chamber
US6503330B1 (en) 1999-12-22 2003-01-07 Genus, Inc. Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition
US6551399B1 (en) 2000-01-10 2003-04-22 Genus Inc. Fully integrated process for MIM capacitors using atomic layer deposition
US7037797B1 (en) 2000-03-17 2006-05-02 Mattson Technology, Inc. Localized heating and cooling of substrates
US6331212B1 (en) 2000-04-17 2001-12-18 Avansys, Llc Methods and apparatus for thermally processing wafers
US6554905B1 (en) 2000-04-17 2003-04-29 Asm America, Inc. Rotating semiconductor processing apparatus
US6617173B1 (en) 2000-10-11 2003-09-09 Genus, Inc. Integration of ferromagnetic films with ultrathin insulating film using atomic layer deposition
US20030190424A1 (en) * 2000-10-20 2003-10-09 Ofer Sneh Process for tungsten silicide atomic layer deposition
US6970644B2 (en) * 2000-12-21 2005-11-29 Mattson Technology, Inc. Heating configuration for use in thermal processing chambers
US6660095B2 (en) 2001-01-15 2003-12-09 Jusung Engineering Co., Ltd. Single wafer LPCVD apparatus
US6939579B2 (en) * 2001-03-07 2005-09-06 Asm International N.V. ALD reactor and method with controlled wall temperature
US6818864B2 (en) * 2002-08-09 2004-11-16 Asm America, Inc. LED heat lamp arrays for CVD heating
US6879777B2 (en) 2002-10-03 2005-04-12 Asm America, Inc. Localized heating of substrates using optics
US6720531B1 (en) 2002-12-11 2004-04-13 Asm America, Inc. Light scattering process chamber walls
US7108753B2 (en) * 2003-10-29 2006-09-19 Asm America, Inc. Staggered ribs on process chamber to reduce thermal effects
US20050217585A1 (en) * 2004-04-01 2005-10-06 Blomiley Eric R Substrate susceptor for receiving a substrate to be deposited upon
US20050223993A1 (en) * 2004-04-08 2005-10-13 Blomiley Eric R Deposition apparatuses; methods for assessing alignments of substrates within deposition apparatuses; and methods for assessing thicknesses of deposited layers within deposition apparatuses
US7396415B2 (en) * 2005-06-02 2008-07-08 Asm America, Inc. Apparatus and methods for isolating chemical vapor reactions at a substrate surface
US7597574B2 (en) * 2006-08-11 2009-10-06 Asm America, Inc. Lamp fasteners for semiconductor processing reactors
US20090101633A1 (en) * 2007-10-19 2009-04-23 Asm America, Inc. Reactor with small linear lamps for localized heat control and improved temperature uniformity
US20100209082A1 (en) * 2008-05-30 2010-08-19 Alta Devices, Inc. Heating lamp system
EP2294608B1 (en) * 2008-06-30 2017-04-19 Soitec Modular and readily configurable reactor enclosures
US8440048B2 (en) * 2009-01-28 2013-05-14 Asm America, Inc. Load lock having secondary isolation chamber
US8404499B2 (en) * 2009-04-20 2013-03-26 Applied Materials, Inc. LED substrate processing
US9870937B2 (en) * 2010-06-09 2018-01-16 Ob Realty, Llc High productivity deposition reactor comprising a gas flow chamber having a tapered gas flow space
JP5615102B2 (en) * 2010-08-31 2014-10-29 株式会社ニューフレアテクノロジー Semiconductor manufacturing method and semiconductor manufacturing apparatus
US9885123B2 (en) * 2011-03-16 2018-02-06 Asm America, Inc. Rapid bake of semiconductor substrate with upper linear heating elements perpendicular to horizontal gas flow
JP5626163B2 (en) * 2011-09-08 2014-11-19 信越半導体株式会社 Epitaxial growth equipment
JP5807522B2 (en) * 2011-11-17 2015-11-10 信越半導体株式会社 Epitaxial growth equipment
US9960059B2 (en) * 2012-03-30 2018-05-01 Taiwan Semiconductor Manufacturing Company, Ltd. Honeycomb heaters for integrated circuit manufacturing
KR102181233B1 (en) * 2013-07-19 2020-11-23 삼성디스플레이 주식회사 Plasma enhanced chemical vapor deposition device and display appratus using the same
DE102013109155A1 (en) * 2013-08-23 2015-02-26 Aixtron Se Substrate processing apparatus
DE102013110426B4 (en) * 2013-09-20 2017-11-23 Von Ardenne Gmbh Substrate treatment plant
US10932323B2 (en) 2015-08-03 2021-02-23 Alta Devices, Inc. Reflector and susceptor assembly for chemical vapor deposition reactor
EP3184666B1 (en) 2015-12-23 2018-06-13 Singulus Technologies AG System and method for gas phase deposition
EP3497259A1 (en) 2016-08-09 2019-06-19 Singulus Technologies AG System and method for gas phase deposition
EP3652358A1 (en) 2017-07-14 2020-05-20 King Abdullah University Of Science And Technology Metal organic chemical vapor deposition system and method
WO2019089185A1 (en) * 2017-10-30 2019-05-09 Applied Materials, Inc. Multi zone spot heating in epi
US11032945B2 (en) * 2019-07-12 2021-06-08 Applied Materials, Inc. Heat shield assembly for an epitaxy chamber
US20220322492A1 (en) * 2021-04-06 2022-10-06 Applied Materials, Inc. Epitaxial deposition chamber

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3836751A (en) * 1973-07-26 1974-09-17 Applied Materials Inc Temperature controlled profiling heater
US4654509A (en) * 1985-10-07 1987-03-31 Epsilon Limited Partnership Method and apparatus for substrate heating in an axially symmetric epitaxial deposition apparatus

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO8810322A1 *

Also Published As

Publication number Publication date
HK76095A (en) 1995-05-26
US4836138A (en) 1989-06-06
EP0363437A4 (en) 1990-11-28
DE3852642D1 (en) 1995-02-09
DE3852642T2 (en) 1995-07-27
JPH03500549A (en) 1991-02-07
JPH07100863B2 (en) 1995-11-01
SG38910G (en) 1995-09-01
WO1988010322A1 (en) 1988-12-29
EP0363437B1 (en) 1994-12-28
ATE116381T1 (en) 1995-01-15

Similar Documents

Publication Publication Date Title
EP0363437A1 (en) Heating system for reaction chamber of chemical vapor deposition equipment.
FR2376821A1 (en) VERY PURE SILICON MANUFACTURING PROCESS
JP2001507757A (en) Flash vaporizer
FR2402475A1 (en) DEVICE AND METHOD FOR THERMAL TREATMENT OF ORGANIC CARBON MATERIALS
DE1257684T1 (en) CVD METHOD AND DEVICE FOR DEPOSITING POLYSILIZIUM
FR2572505A1 (en) RADIATION HEATING APPARATUS COMPRISING A HEATING ZONE AND A HEATER ZONE
FR2435817A1 (en) PROCESS FOR DIFFUSING ALUMINUM IN A SEMICONDUCTOR PELLET
JPH0465819A (en) Vapor growth device
FI913353A0 (en) FOERFARANDE FOER FRAMSTAELLNING AV KISELKARBID.
JPS5678497A (en) Vapor growth apparatus
JPS54111771A (en) Gas phase reaction unit of semiconductor substrate
EP0586651A1 (en) Treatment chamber
JPS6135562Y2 (en)
SU850168A1 (en) Filter for sampler
Delgaes et al. Rate of SiC deposition from methyltrichlorosilane and influence of HCl addition
SU1334007A1 (en) Apparatus for lyophil drying of thermosensitive materials
JPS57132543A (en) Horizontal type reaction tube with rotary type sample holding and heating table
JP3011453B2 (en) Semiconductor thin plate processing equipment
JPH0626182B2 (en) Infrared heating device
EP0307299A3 (en) Method for using a thermal shock probe, probe and use of the method
Iwata et al. A convenient cryogenic trap with liquid nitrogen for the concentration of [11C] CO2
Jang et al. Kinetics of Titanium Deposition on Stainless Steel at Elevated Temperatures
SU378558A1 (en) INSTALLATION FOR GAS-COATED COATING
JPH0658883B2 (en) Vapor phase growth equipment
JPH0745546A (en) Heat treatment device

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 19890217

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE CH DE FR GB IT LI LU NL SE

A4 Supplementary search report drawn up and despatched

Effective date: 19901011

AK Designated contracting states

Kind code of ref document: A4

Designated state(s): AT BE CH DE FR GB IT LI LU NL SE

17Q First examination report despatched

Effective date: 19920805

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: ADVANCED SEMICONDUCTOR MATERIALS AMERICA, INC.

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

REF Corresponds to:

Ref document number: 116381

Country of ref document: AT

Date of ref document: 19950115

Kind code of ref document: T

EAL Se: european patent in force in sweden

Ref document number: 88906646.0

REF Corresponds to:

Ref document number: 3852642

Country of ref document: DE

Date of ref document: 19950209

ITF It: translation for a ep patent filed

Owner name: ING. A. GIAMBROCONO & C. S.R.L.

ET Fr: translation filed
PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed
PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: SE

Payment date: 19970521

Year of fee payment: 10

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: AT

Payment date: 19970523

Year of fee payment: 10

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: BE

Payment date: 19970527

Year of fee payment: 10

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: CH

Payment date: 19970528

Year of fee payment: 10

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: LU

Payment date: 19970620

Year of fee payment: 10

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 19980617

Ref country code: AT

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 19980617

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 19980618

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 19980630

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 19980630

Ref country code: BE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 19980630

BERE Be: lapsed

Owner name: ADVANCED SEMICONDUCTOR MATERIALS AMERICA INC.

Effective date: 19980630

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

EUG Se: european patent has lapsed

Ref document number: 88906646.0

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: NL

Payment date: 19990531

Year of fee payment: 12

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: NL

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20010101

NLV4 Nl: lapsed or anulled due to non-payment of the annual fee

Effective date: 20010101

REG Reference to a national code

Ref country code: FR

Ref legal event code: CD

REG Reference to a national code

Ref country code: GB

Ref legal event code: IF02

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20070614

Year of fee payment: 20

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20070613

Year of fee payment: 20

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: IT

Payment date: 20070625

Year of fee payment: 20

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 20070608

Year of fee payment: 20

REG Reference to a national code

Ref country code: GB

Ref legal event code: PE20

Expiry date: 20080616

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF EXPIRATION OF PROTECTION

Effective date: 20080616