EP0363437A1 - Heating system for reaction chamber of chemical vapor deposition equipment. - Google Patents
Heating system for reaction chamber of chemical vapor deposition equipment.Info
- Publication number
- EP0363437A1 EP0363437A1 EP88906646A EP88906646A EP0363437A1 EP 0363437 A1 EP0363437 A1 EP 0363437A1 EP 88906646 A EP88906646 A EP 88906646A EP 88906646 A EP88906646 A EP 88906646A EP 0363437 A1 EP0363437 A1 EP 0363437A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- heating system
- treatment cycle
- reaction chamber
- deposition equipment
- vapor deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010438 heat treatment Methods 0.000 title abstract 5
- 238000005229 chemical vapour deposition Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 2
- 238000009825 accumulation Methods 0.000 abstract 1
- 238000005234 chemical deposition Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 230000003993 interaction Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Dans un système de chauffage destiné à être utilisé dans un équipement de déposition en phase gazeuse par procédé chimique, un gaz réactif est dirigé dans un flux horizontal pour permettre le dépôt de matériaux sur un substrat maintenu dans une chambre de réaction (10) sur une base (''susceptor'') (20) à entraînement rotatif, de façon à faire tourner le substrat autour d'un axe qui s'étend perpendiculairement à son centre. Le système de chauffage agit conjointement avec un agencement spécial de détection thermique et comprend un assemblage d'élément chauffant supérieur (32), un assemblage d'élément chauffant inférieur (34) ainsi qu'un mécanisme de concentration thermique (36) qui travaille en interaction, afin de permettre une accumulation rapide de température au début du cycle de traitement, une atténuation rapide de température à la fin du cycle de traitement et une courbe de température plate soumise à régulation durant le cycle de traitement.In a heating system for use in gas-phase chemical deposition equipment, a reactive gas is directed in a horizontal flow to allow the deposition of materials on a substrate held in a reaction chamber (10) on a base (“susceptor”) (20) with rotary drive, so as to rotate the substrate around an axis which extends perpendicular to its center. The heating system acts in conjunction with a special thermal sensing arrangement and includes an upper heating element assembly (32), a lower heating element assembly (34) and a heat concentrating mechanism (36) which operates in interaction, to allow rapid temperature accumulation at the start of the treatment cycle, rapid temperature attenuation at the end of the treatment cycle and a flat temperature curve subject to regulation during the treatment cycle.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/063,409 US4836138A (en) | 1987-06-18 | 1987-06-18 | Heating system for reaction chamber of chemical vapor deposition equipment |
US63409 | 1987-06-18 | ||
PCT/US1988/002117 WO1988010322A1 (en) | 1987-06-18 | 1988-06-17 | Heating system for reaction chamber of chemical vapor deposition equipment |
Publications (3)
Publication Number | Publication Date |
---|---|
EP0363437A1 true EP0363437A1 (en) | 1990-04-18 |
EP0363437A4 EP0363437A4 (en) | 1990-11-28 |
EP0363437B1 EP0363437B1 (en) | 1994-12-28 |
Family
ID=22049003
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP88906646A Expired - Lifetime EP0363437B1 (en) | 1987-06-18 | 1988-06-17 | Heating system for reaction chamber of chemical vapor deposition equipment |
Country Status (8)
Country | Link |
---|---|
US (1) | US4836138A (en) |
EP (1) | EP0363437B1 (en) |
JP (1) | JPH07100863B2 (en) |
AT (1) | ATE116381T1 (en) |
DE (1) | DE3852642T2 (en) |
HK (1) | HK76095A (en) |
SG (1) | SG38910G (en) |
WO (1) | WO1988010322A1 (en) |
Families Citing this family (91)
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US5221556A (en) * | 1987-06-24 | 1993-06-22 | Epsilon Technology, Inc. | Gas injectors for reaction chambers in CVD systems |
US5517005A (en) * | 1988-05-19 | 1996-05-14 | Quadlux, Inc. | Visible light and infra-red cooking apparatus |
US5160545A (en) * | 1989-02-03 | 1992-11-03 | Applied Materials, Inc. | Method and apparatus for epitaxial deposition |
US6016383A (en) * | 1990-01-19 | 2000-01-18 | Applied Materials, Inc. | Rapid thermal heating apparatus and method including an infrared camera to measure substrate temperature |
US5155336A (en) * | 1990-01-19 | 1992-10-13 | Applied Materials, Inc. | Rapid thermal heating apparatus and method |
US5108792A (en) * | 1990-03-09 | 1992-04-28 | Applied Materials, Inc. | Double-dome reactor for semiconductor processing |
JP2728766B2 (en) * | 1990-07-18 | 1998-03-18 | 株式会社東芝 | Semiconductor processing method and apparatus |
US5179677A (en) * | 1990-08-16 | 1993-01-12 | Applied Materials, Inc. | Apparatus and method for substrate heating utilizing various infrared means to achieve uniform intensity |
US5044943A (en) * | 1990-08-16 | 1991-09-03 | Applied Materials, Inc. | Spoked susceptor support for enhanced thermal uniformity of susceptor in semiconductor wafer processing apparatus |
US5446825A (en) * | 1991-04-24 | 1995-08-29 | Texas Instruments Incorporated | High performance multi-zone illuminator module for semiconductor wafer processing |
US5359693A (en) * | 1991-07-15 | 1994-10-25 | Ast Elektronik Gmbh | Method and apparatus for a rapid thermal processing of delicate components |
DE4223133A1 (en) * | 1991-07-15 | 1993-01-21 | T Elektronik Gmbh As | Rapid thermal processing of sensitive devices - using heat source programme control to avoid defects in e.g. semiconductor devices |
CA2069132C (en) * | 1991-08-29 | 1996-01-09 | Koji Fujii | Light-beam heating apparatus |
DE4130337C2 (en) * | 1991-09-12 | 2002-05-02 | Ego Elektro Blanc & Fischer | Method for operating an electric heating unit and electric heating unit |
US5332442A (en) * | 1991-11-15 | 1994-07-26 | Tokyo Electron Kabushiki Kaisha | Surface processing apparatus |
US5268989A (en) * | 1992-04-16 | 1993-12-07 | Texas Instruments Incorporated | Multi zone illuminator with embeded process control sensors and light interference elimination circuit |
US5534072A (en) * | 1992-06-24 | 1996-07-09 | Anelva Corporation | Integrated module multi-chamber CVD processing system and its method for processing subtrates |
KR100241290B1 (en) * | 1992-07-09 | 2000-03-02 | 야마시타 히데나리 | Semiconductor processing apparatus |
JPH06244269A (en) * | 1992-09-07 | 1994-09-02 | Mitsubishi Electric Corp | Semiconductor manufacturing apparatus, wafer vacuum chuck device thereof, and gas cleaning and nitride film formation therefor |
US5444217A (en) * | 1993-01-21 | 1995-08-22 | Moore Epitaxial Inc. | Rapid thermal processing apparatus for processing semiconductor wafers |
US5820686A (en) * | 1993-01-21 | 1998-10-13 | Moore Epitaxial, Inc. | Multi-layer susceptor for rapid thermal process reactors |
US5580388A (en) * | 1993-01-21 | 1996-12-03 | Moore Epitaxial, Inc. | Multi-layer susceptor for rapid thermal process reactors |
BE1006988A3 (en) * | 1993-04-13 | 1995-02-07 | Imec Inter Uni Micro Electr | Device for use in the field of rapid thermal annealing techniques |
US5650082A (en) * | 1993-10-29 | 1997-07-22 | Applied Materials, Inc. | Profiled substrate heating |
US5504831A (en) * | 1993-11-10 | 1996-04-02 | Micron Semiconductor, Inc. | System for compensating against wafer edge heat loss in rapid thermal processing |
US5444815A (en) * | 1993-12-16 | 1995-08-22 | Texas Instruments Incorporated | Multi-zone lamp interference correction system |
FI100409B (en) * | 1994-11-28 | 1997-11-28 | Asm Int | Method and apparatus for making thin films |
US5830277A (en) * | 1995-05-26 | 1998-11-03 | Mattson Technology, Inc. | Thermal processing system with supplemental resistive heater and shielded optical pyrometry |
EP1050602B1 (en) * | 1995-08-03 | 2004-05-26 | ASM America, Inc. | Process chamber with inner support |
US6093252A (en) * | 1995-08-03 | 2000-07-25 | Asm America, Inc. | Process chamber with inner support |
US5551985A (en) * | 1995-08-18 | 1996-09-03 | Torrex Equipment Corporation | Method and apparatus for cold wall chemical vapor deposition |
US5997588A (en) * | 1995-10-13 | 1999-12-07 | Advanced Semiconductor Materials America, Inc. | Semiconductor processing system with gas curtain |
US5805769A (en) * | 1996-03-21 | 1998-09-08 | Amana Company, L.P. | Adjustable ellipsoidal reflector for food heating apparatus |
US6072160A (en) * | 1996-06-03 | 2000-06-06 | Applied Materials, Inc. | Method and apparatus for enhancing the efficiency of radiant energy sources used in rapid thermal processing of substrates by energy reflection |
US5879459A (en) * | 1997-08-29 | 1999-03-09 | Genus, Inc. | Vertically-stacked process reactor and cluster tool system for atomic layer deposition |
US6217662B1 (en) | 1997-03-24 | 2001-04-17 | Cree, Inc. | Susceptor designs for silicon carbide thin films |
US5792273A (en) * | 1997-05-27 | 1998-08-11 | Memc Electric Materials, Inc. | Secondary edge reflector for horizontal reactor |
US5960158A (en) * | 1997-07-11 | 1999-09-28 | Ag Associates | Apparatus and method for filtering light in a thermal processing chamber |
US5990454A (en) | 1997-09-23 | 1999-11-23 | Quadlux, Inc. | Lightwave oven and method of cooking therewith having multiple cook modes and sequential lamp operation |
US5958271A (en) | 1997-09-23 | 1999-09-28 | Quadlux, Inc. | Lightwave oven and method of cooking therewith with cookware reflectivity compensation |
US6013900A (en) | 1997-09-23 | 2000-01-11 | Quadlux, Inc. | High efficiency lightwave oven |
WO1999023690A1 (en) | 1997-11-03 | 1999-05-14 | Asm America, Inc. | Method of processing wafers with low mass support |
US5930456A (en) * | 1998-05-14 | 1999-07-27 | Ag Associates | Heating device for semiconductor wafers |
US5970214A (en) * | 1998-05-14 | 1999-10-19 | Ag Associates | Heating device for semiconductor wafers |
US6210484B1 (en) | 1998-09-09 | 2001-04-03 | Steag Rtp Systems, Inc. | Heating device containing a multi-lamp cone for heating semiconductor wafers |
WO2000031777A1 (en) * | 1998-11-20 | 2000-06-02 | Steag Rtp Systems, Inc. | Fast heating and cooling apparatus for semiconductor wafers |
US6771895B2 (en) * | 1999-01-06 | 2004-08-03 | Mattson Technology, Inc. | Heating device for heating semiconductor wafers in thermal processing chambers |
US6281141B1 (en) | 1999-02-08 | 2001-08-28 | Steag Rtp Systems, Inc. | Process for forming thin dielectric layers in semiconductor devices |
FI118342B (en) | 1999-05-10 | 2007-10-15 | Asm Int | Apparatus for making thin films |
TW411033U (en) * | 1999-05-12 | 2000-11-01 | Nat Science Council | Reflector structure for improving irradiation uniformity of liner lamp array |
US6485603B1 (en) * | 1999-07-01 | 2002-11-26 | Applied Materials, Inc. | Method and apparatus for conserving energy within a process chamber |
US6383330B1 (en) | 1999-09-10 | 2002-05-07 | Asm America, Inc. | Quartz wafer processing chamber |
US6503330B1 (en) | 1999-12-22 | 2003-01-07 | Genus, Inc. | Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition |
US6551399B1 (en) | 2000-01-10 | 2003-04-22 | Genus Inc. | Fully integrated process for MIM capacitors using atomic layer deposition |
US7037797B1 (en) | 2000-03-17 | 2006-05-02 | Mattson Technology, Inc. | Localized heating and cooling of substrates |
US6331212B1 (en) | 2000-04-17 | 2001-12-18 | Avansys, Llc | Methods and apparatus for thermally processing wafers |
US6554905B1 (en) | 2000-04-17 | 2003-04-29 | Asm America, Inc. | Rotating semiconductor processing apparatus |
US6617173B1 (en) | 2000-10-11 | 2003-09-09 | Genus, Inc. | Integration of ferromagnetic films with ultrathin insulating film using atomic layer deposition |
US20030190424A1 (en) * | 2000-10-20 | 2003-10-09 | Ofer Sneh | Process for tungsten silicide atomic layer deposition |
US6970644B2 (en) * | 2000-12-21 | 2005-11-29 | Mattson Technology, Inc. | Heating configuration for use in thermal processing chambers |
US6660095B2 (en) | 2001-01-15 | 2003-12-09 | Jusung Engineering Co., Ltd. | Single wafer LPCVD apparatus |
US6939579B2 (en) * | 2001-03-07 | 2005-09-06 | Asm International N.V. | ALD reactor and method with controlled wall temperature |
US6818864B2 (en) * | 2002-08-09 | 2004-11-16 | Asm America, Inc. | LED heat lamp arrays for CVD heating |
US6879777B2 (en) | 2002-10-03 | 2005-04-12 | Asm America, Inc. | Localized heating of substrates using optics |
US6720531B1 (en) | 2002-12-11 | 2004-04-13 | Asm America, Inc. | Light scattering process chamber walls |
US7108753B2 (en) * | 2003-10-29 | 2006-09-19 | Asm America, Inc. | Staggered ribs on process chamber to reduce thermal effects |
US20050217585A1 (en) * | 2004-04-01 | 2005-10-06 | Blomiley Eric R | Substrate susceptor for receiving a substrate to be deposited upon |
US20050223993A1 (en) * | 2004-04-08 | 2005-10-13 | Blomiley Eric R | Deposition apparatuses; methods for assessing alignments of substrates within deposition apparatuses; and methods for assessing thicknesses of deposited layers within deposition apparatuses |
US7396415B2 (en) * | 2005-06-02 | 2008-07-08 | Asm America, Inc. | Apparatus and methods for isolating chemical vapor reactions at a substrate surface |
US7597574B2 (en) * | 2006-08-11 | 2009-10-06 | Asm America, Inc. | Lamp fasteners for semiconductor processing reactors |
US20090101633A1 (en) * | 2007-10-19 | 2009-04-23 | Asm America, Inc. | Reactor with small linear lamps for localized heat control and improved temperature uniformity |
US20100209082A1 (en) * | 2008-05-30 | 2010-08-19 | Alta Devices, Inc. | Heating lamp system |
EP2294608B1 (en) * | 2008-06-30 | 2017-04-19 | Soitec | Modular and readily configurable reactor enclosures |
US8440048B2 (en) * | 2009-01-28 | 2013-05-14 | Asm America, Inc. | Load lock having secondary isolation chamber |
US8404499B2 (en) * | 2009-04-20 | 2013-03-26 | Applied Materials, Inc. | LED substrate processing |
US9870937B2 (en) * | 2010-06-09 | 2018-01-16 | Ob Realty, Llc | High productivity deposition reactor comprising a gas flow chamber having a tapered gas flow space |
JP5615102B2 (en) * | 2010-08-31 | 2014-10-29 | 株式会社ニューフレアテクノロジー | Semiconductor manufacturing method and semiconductor manufacturing apparatus |
US9885123B2 (en) * | 2011-03-16 | 2018-02-06 | Asm America, Inc. | Rapid bake of semiconductor substrate with upper linear heating elements perpendicular to horizontal gas flow |
JP5626163B2 (en) * | 2011-09-08 | 2014-11-19 | 信越半導体株式会社 | Epitaxial growth equipment |
JP5807522B2 (en) * | 2011-11-17 | 2015-11-10 | 信越半導体株式会社 | Epitaxial growth equipment |
US9960059B2 (en) * | 2012-03-30 | 2018-05-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Honeycomb heaters for integrated circuit manufacturing |
KR102181233B1 (en) * | 2013-07-19 | 2020-11-23 | 삼성디스플레이 주식회사 | Plasma enhanced chemical vapor deposition device and display appratus using the same |
DE102013109155A1 (en) * | 2013-08-23 | 2015-02-26 | Aixtron Se | Substrate processing apparatus |
DE102013110426B4 (en) * | 2013-09-20 | 2017-11-23 | Von Ardenne Gmbh | Substrate treatment plant |
US10932323B2 (en) | 2015-08-03 | 2021-02-23 | Alta Devices, Inc. | Reflector and susceptor assembly for chemical vapor deposition reactor |
EP3184666B1 (en) | 2015-12-23 | 2018-06-13 | Singulus Technologies AG | System and method for gas phase deposition |
EP3497259A1 (en) | 2016-08-09 | 2019-06-19 | Singulus Technologies AG | System and method for gas phase deposition |
EP3652358A1 (en) | 2017-07-14 | 2020-05-20 | King Abdullah University Of Science And Technology | Metal organic chemical vapor deposition system and method |
WO2019089185A1 (en) * | 2017-10-30 | 2019-05-09 | Applied Materials, Inc. | Multi zone spot heating in epi |
US11032945B2 (en) * | 2019-07-12 | 2021-06-08 | Applied Materials, Inc. | Heat shield assembly for an epitaxy chamber |
US20220322492A1 (en) * | 2021-04-06 | 2022-10-06 | Applied Materials, Inc. | Epitaxial deposition chamber |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3836751A (en) * | 1973-07-26 | 1974-09-17 | Applied Materials Inc | Temperature controlled profiling heater |
US4654509A (en) * | 1985-10-07 | 1987-03-31 | Epsilon Limited Partnership | Method and apparatus for substrate heating in an axially symmetric epitaxial deposition apparatus |
-
1987
- 1987-06-18 US US07/063,409 patent/US4836138A/en not_active Expired - Lifetime
-
1988
- 1988-06-17 WO PCT/US1988/002117 patent/WO1988010322A1/en active IP Right Grant
- 1988-06-17 AT AT88906646T patent/ATE116381T1/en not_active IP Right Cessation
- 1988-06-17 JP JP63506405A patent/JPH07100863B2/en not_active Expired - Lifetime
- 1988-06-17 EP EP88906646A patent/EP0363437B1/en not_active Expired - Lifetime
- 1988-06-17 DE DE3852642T patent/DE3852642T2/en not_active Expired - Lifetime
- 1988-06-17 SG SG1995906970A patent/SG38910G/en unknown
-
1995
- 1995-05-18 HK HK76095A patent/HK76095A/en not_active IP Right Cessation
Non-Patent Citations (1)
Title |
---|
See references of WO8810322A1 * |
Also Published As
Publication number | Publication date |
---|---|
HK76095A (en) | 1995-05-26 |
US4836138A (en) | 1989-06-06 |
EP0363437A4 (en) | 1990-11-28 |
DE3852642D1 (en) | 1995-02-09 |
DE3852642T2 (en) | 1995-07-27 |
JPH03500549A (en) | 1991-02-07 |
JPH07100863B2 (en) | 1995-11-01 |
SG38910G (en) | 1995-09-01 |
WO1988010322A1 (en) | 1988-12-29 |
EP0363437B1 (en) | 1994-12-28 |
ATE116381T1 (en) | 1995-01-15 |
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