WO1988010322A1 - Heating system for reaction chamber of chemical vapor deposition equipment - Google Patents

Heating system for reaction chamber of chemical vapor deposition equipment Download PDF

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Publication number
WO1988010322A1
WO1988010322A1 PCT/US1988/002117 US8802117W WO8810322A1 WO 1988010322 A1 WO1988010322 A1 WO 1988010322A1 US 8802117 W US8802117 W US 8802117W WO 8810322 A1 WO8810322 A1 WO 8810322A1
Authority
WO
WIPO (PCT)
Prior art keywords
heating system
vapor deposition
reaction chamber
chemical vapor
processing cycle
Prior art date
Application number
PCT/US1988/002117
Other languages
French (fr)
Inventor
Mcdonald Robinson
Albert E. Ozias
Original Assignee
Epsilon Technology, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epsilon Technology, Inc. filed Critical Epsilon Technology, Inc.
Priority to JP63506405A priority Critical patent/JPH07100863B2/en
Priority to EP88906646A priority patent/EP0363437B1/en
Priority to DE3852642T priority patent/DE3852642T2/en
Publication of WO1988010322A1 publication Critical patent/WO1988010322A1/en
Priority to HK76095A priority patent/HK76095A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

A heating system for use in chemical vapor deposition equipment of the type wherein a reactant gas is directed in a horizontal flow for depositing materials on a substrate which is supported in a reaction chamber (10) on a susceptor (20) which is rotatably driven for rotating the substrate about an axis which extends normally from its center. The heating system works in conjunction with a special heat sensing arrangement and includes an upper heating element assembly (32), a lower heating element assembly (34) and a heat concentrator mechanism (36) which interact to provide rapid temperature build-up at the beginning of a processing cycle, rapid temperature attenuation at the end of a processing cycle and a controlled flat temperature profile during the processing cycle.
PCT/US1988/002117 1987-06-18 1988-06-17 Heating system for reaction chamber of chemical vapor deposition equipment WO1988010322A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP63506405A JPH07100863B2 (en) 1987-06-18 1988-06-17 Heating device for reaction chamber of chemical vapor deposition equipment
EP88906646A EP0363437B1 (en) 1987-06-18 1988-06-17 Heating system for reaction chamber of chemical vapor deposition equipment
DE3852642T DE3852642T2 (en) 1987-06-18 1988-06-17 HEATING SYSTEM FOR REACTION CHAMBER OF A CHEMICAL VAPOR DEPOSIT DEVICE.
HK76095A HK76095A (en) 1987-06-18 1995-05-18 Heating system for reaction chamber of chemical vapor deposition equipment

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/063,409 US4836138A (en) 1987-06-18 1987-06-18 Heating system for reaction chamber of chemical vapor deposition equipment
US063,409 1987-06-18

Publications (1)

Publication Number Publication Date
WO1988010322A1 true WO1988010322A1 (en) 1988-12-29

Family

ID=22049003

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1988/002117 WO1988010322A1 (en) 1987-06-18 1988-06-17 Heating system for reaction chamber of chemical vapor deposition equipment

Country Status (8)

Country Link
US (1) US4836138A (en)
EP (1) EP0363437B1 (en)
JP (1) JPH07100863B2 (en)
AT (1) ATE116381T1 (en)
DE (1) DE3852642T2 (en)
HK (1) HK76095A (en)
SG (1) SG38910G (en)
WO (1) WO1988010322A1 (en)

Cited By (5)

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EP0445596A2 (en) * 1990-03-09 1991-09-11 Applied Materials, Inc. Double-dome reactor for semiconductor processing
EP0471365A1 (en) * 1990-08-16 1992-02-19 Applied Materials, Inc. Semiconductor wafer processing apparatus
EP0476307A1 (en) * 1990-08-16 1992-03-25 Applied Materials, Inc. Apparatus and method for substrate heating in semiconductor processes
BE1006988A3 (en) * 1993-04-13 1995-02-07 Imec Inter Uni Micro Electr Device for use in the field of rapid thermal annealing techniques
WO1998054381A1 (en) * 1997-05-27 1998-12-03 Memc Electronic Materials, Inc. Secondary edge reflector for horizontal reactor

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US5517005A (en) * 1988-05-19 1996-05-14 Quadlux, Inc. Visible light and infra-red cooking apparatus
US5160545A (en) * 1989-02-03 1992-11-03 Applied Materials, Inc. Method and apparatus for epitaxial deposition
US5155336A (en) * 1990-01-19 1992-10-13 Applied Materials, Inc. Rapid thermal heating apparatus and method
US6016383A (en) * 1990-01-19 2000-01-18 Applied Materials, Inc. Rapid thermal heating apparatus and method including an infrared camera to measure substrate temperature
JP2728766B2 (en) * 1990-07-18 1998-03-18 株式会社東芝 Semiconductor processing method and apparatus
US5446825A (en) * 1991-04-24 1995-08-29 Texas Instruments Incorporated High performance multi-zone illuminator module for semiconductor wafer processing
US5359693A (en) * 1991-07-15 1994-10-25 Ast Elektronik Gmbh Method and apparatus for a rapid thermal processing of delicate components
DE4223133A1 (en) * 1991-07-15 1993-01-21 T Elektronik Gmbh As Rapid thermal processing of sensitive devices - using heat source programme control to avoid defects in e.g. semiconductor devices
CA2069132C (en) * 1991-08-29 1996-01-09 Koji Fujii Light-beam heating apparatus
DE4130337C2 (en) * 1991-09-12 2002-05-02 Ego Elektro Blanc & Fischer Method for operating an electric heating unit and electric heating unit
US5332442A (en) * 1991-11-15 1994-07-26 Tokyo Electron Kabushiki Kaisha Surface processing apparatus
US5268989A (en) * 1992-04-16 1993-12-07 Texas Instruments Incorporated Multi zone illuminator with embeded process control sensors and light interference elimination circuit
US5534072A (en) * 1992-06-24 1996-07-09 Anelva Corporation Integrated module multi-chamber CVD processing system and its method for processing subtrates
US5445675A (en) * 1992-07-09 1995-08-29 Tel-Varian Limited Semiconductor processing apparatus
JPH06244269A (en) * 1992-09-07 1994-09-02 Mitsubishi Electric Corp Semiconductor manufacturing apparatus, wafer vacuum chuck device thereof, and gas cleaning and nitride film formation therefor
US5580388A (en) * 1993-01-21 1996-12-03 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
US5444217A (en) * 1993-01-21 1995-08-22 Moore Epitaxial Inc. Rapid thermal processing apparatus for processing semiconductor wafers
US5820686A (en) * 1993-01-21 1998-10-13 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
US5650082A (en) * 1993-10-29 1997-07-22 Applied Materials, Inc. Profiled substrate heating
US5504831A (en) * 1993-11-10 1996-04-02 Micron Semiconductor, Inc. System for compensating against wafer edge heat loss in rapid thermal processing
US5444815A (en) * 1993-12-16 1995-08-22 Texas Instruments Incorporated Multi-zone lamp interference correction system
FI100409B (en) * 1994-11-28 1997-11-28 Asm Int Method and apparatus for making thin films
US5830277A (en) * 1995-05-26 1998-11-03 Mattson Technology, Inc. Thermal processing system with supplemental resistive heater and shielded optical pyrometry
EP1046728B1 (en) * 1995-08-03 2003-05-14 ASM America, Inc. Process chamber with inner support
US6093252A (en) 1995-08-03 2000-07-25 Asm America, Inc. Process chamber with inner support
US5551985A (en) * 1995-08-18 1996-09-03 Torrex Equipment Corporation Method and apparatus for cold wall chemical vapor deposition
US5997588A (en) * 1995-10-13 1999-12-07 Advanced Semiconductor Materials America, Inc. Semiconductor processing system with gas curtain
US5805769A (en) * 1996-03-21 1998-09-08 Amana Company, L.P. Adjustable ellipsoidal reflector for food heating apparatus
US6072160A (en) * 1996-06-03 2000-06-06 Applied Materials, Inc. Method and apparatus for enhancing the efficiency of radiant energy sources used in rapid thermal processing of substrates by energy reflection
US5879459A (en) * 1997-08-29 1999-03-09 Genus, Inc. Vertically-stacked process reactor and cluster tool system for atomic layer deposition
US6217662B1 (en) 1997-03-24 2001-04-17 Cree, Inc. Susceptor designs for silicon carbide thin films
US5960158A (en) * 1997-07-11 1999-09-28 Ag Associates Apparatus and method for filtering light in a thermal processing chamber
US5990454A (en) 1997-09-23 1999-11-23 Quadlux, Inc. Lightwave oven and method of cooking therewith having multiple cook modes and sequential lamp operation
US6013900A (en) 1997-09-23 2000-01-11 Quadlux, Inc. High efficiency lightwave oven
US5958271A (en) 1997-09-23 1999-09-28 Quadlux, Inc. Lightwave oven and method of cooking therewith with cookware reflectivity compensation
KR100551980B1 (en) * 1997-11-03 2006-02-20 에이에스엠 아메리카, 인코포레이티드 Method and Apparatus of Processing Wafers with Low Mass Support
US5930456A (en) * 1998-05-14 1999-07-27 Ag Associates Heating device for semiconductor wafers
US5970214A (en) * 1998-05-14 1999-10-19 Ag Associates Heating device for semiconductor wafers
US6210484B1 (en) 1998-09-09 2001-04-03 Steag Rtp Systems, Inc. Heating device containing a multi-lamp cone for heating semiconductor wafers
JP4625183B2 (en) * 1998-11-20 2011-02-02 ステアーグ アール ティ ピー システムズ インコーポレイテッド Rapid heating and cooling equipment for semiconductor wafers
US6771895B2 (en) 1999-01-06 2004-08-03 Mattson Technology, Inc. Heating device for heating semiconductor wafers in thermal processing chambers
US6281141B1 (en) 1999-02-08 2001-08-28 Steag Rtp Systems, Inc. Process for forming thin dielectric layers in semiconductor devices
FI118342B (en) 1999-05-10 2007-10-15 Asm Int Apparatus for making thin films
TW411033U (en) * 1999-05-12 2000-11-01 Nat Science Council Reflector structure for improving irradiation uniformity of liner lamp array
US6485603B1 (en) * 1999-07-01 2002-11-26 Applied Materials, Inc. Method and apparatus for conserving energy within a process chamber
US6383330B1 (en) 1999-09-10 2002-05-07 Asm America, Inc. Quartz wafer processing chamber
US6503330B1 (en) 1999-12-22 2003-01-07 Genus, Inc. Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition
US6551399B1 (en) 2000-01-10 2003-04-22 Genus Inc. Fully integrated process for MIM capacitors using atomic layer deposition
US7037797B1 (en) 2000-03-17 2006-05-02 Mattson Technology, Inc. Localized heating and cooling of substrates
US6554905B1 (en) 2000-04-17 2003-04-29 Asm America, Inc. Rotating semiconductor processing apparatus
US6331212B1 (en) 2000-04-17 2001-12-18 Avansys, Llc Methods and apparatus for thermally processing wafers
US6617173B1 (en) 2000-10-11 2003-09-09 Genus, Inc. Integration of ferromagnetic films with ultrathin insulating film using atomic layer deposition
US20030190424A1 (en) * 2000-10-20 2003-10-09 Ofer Sneh Process for tungsten silicide atomic layer deposition
US6970644B2 (en) * 2000-12-21 2005-11-29 Mattson Technology, Inc. Heating configuration for use in thermal processing chambers
US6660095B2 (en) 2001-01-15 2003-12-09 Jusung Engineering Co., Ltd. Single wafer LPCVD apparatus
US6939579B2 (en) * 2001-03-07 2005-09-06 Asm International N.V. ALD reactor and method with controlled wall temperature
US6818864B2 (en) * 2002-08-09 2004-11-16 Asm America, Inc. LED heat lamp arrays for CVD heating
US6879777B2 (en) 2002-10-03 2005-04-12 Asm America, Inc. Localized heating of substrates using optics
US6720531B1 (en) 2002-12-11 2004-04-13 Asm America, Inc. Light scattering process chamber walls
US7108753B2 (en) * 2003-10-29 2006-09-19 Asm America, Inc. Staggered ribs on process chamber to reduce thermal effects
US20050217585A1 (en) * 2004-04-01 2005-10-06 Blomiley Eric R Substrate susceptor for receiving a substrate to be deposited upon
US20050223993A1 (en) * 2004-04-08 2005-10-13 Blomiley Eric R Deposition apparatuses; methods for assessing alignments of substrates within deposition apparatuses; and methods for assessing thicknesses of deposited layers within deposition apparatuses
US7396415B2 (en) * 2005-06-02 2008-07-08 Asm America, Inc. Apparatus and methods for isolating chemical vapor reactions at a substrate surface
US7597574B2 (en) * 2006-08-11 2009-10-06 Asm America, Inc. Lamp fasteners for semiconductor processing reactors
US20090101633A1 (en) * 2007-10-19 2009-04-23 Asm America, Inc. Reactor with small linear lamps for localized heat control and improved temperature uniformity
US20100209082A1 (en) * 2008-05-30 2010-08-19 Alta Devices, Inc. Heating lamp system
CN102047387B (en) * 2008-06-30 2012-07-04 S.O.I.Tec绝缘体上硅技术公司 Modular and readily configurable reactor enclosures and associated function modules
US8440048B2 (en) * 2009-01-28 2013-05-14 Asm America, Inc. Load lock having secondary isolation chamber
US8404499B2 (en) * 2009-04-20 2013-03-26 Applied Materials, Inc. LED substrate processing
KR20130051013A (en) * 2010-06-09 2013-05-16 솔렉셀, 인크. High productivity thin film deposition method and system
JP5615102B2 (en) * 2010-08-31 2014-10-29 株式会社ニューフレアテクノロジー Semiconductor manufacturing method and semiconductor manufacturing apparatus
US9885123B2 (en) * 2011-03-16 2018-02-06 Asm America, Inc. Rapid bake of semiconductor substrate with upper linear heating elements perpendicular to horizontal gas flow
JP5626163B2 (en) * 2011-09-08 2014-11-19 信越半導体株式会社 Epitaxial growth equipment
JP5807522B2 (en) * 2011-11-17 2015-11-10 信越半導体株式会社 Epitaxial growth equipment
US9960059B2 (en) * 2012-03-30 2018-05-01 Taiwan Semiconductor Manufacturing Company, Ltd. Honeycomb heaters for integrated circuit manufacturing
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EP3652358A1 (en) 2017-07-14 2020-05-20 King Abdullah University Of Science And Technology Metal organic chemical vapor deposition system and method
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US11032945B2 (en) * 2019-07-12 2021-06-08 Applied Materials, Inc. Heat shield assembly for an epitaxy chamber
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Family Cites Families (1)

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US4654509A (en) * 1985-10-07 1987-03-31 Epsilon Limited Partnership Method and apparatus for substrate heating in an axially symmetric epitaxial deposition apparatus

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0445596A2 (en) * 1990-03-09 1991-09-11 Applied Materials, Inc. Double-dome reactor for semiconductor processing
EP0445596A3 (en) * 1990-03-09 1991-12-18 Applied Materials Inc. Double-dome reactor for semiconductor processing
EP0471365A1 (en) * 1990-08-16 1992-02-19 Applied Materials, Inc. Semiconductor wafer processing apparatus
EP0476307A1 (en) * 1990-08-16 1992-03-25 Applied Materials, Inc. Apparatus and method for substrate heating in semiconductor processes
EP0872574A2 (en) * 1990-08-16 1998-10-21 Applied Materials, Inc. Radiantly heated reactor
EP0872574A3 (en) * 1990-08-16 1998-11-25 Applied Materials, Inc. Radiantly heated reactor
BE1006988A3 (en) * 1993-04-13 1995-02-07 Imec Inter Uni Micro Electr Device for use in the field of rapid thermal annealing techniques
WO1998054381A1 (en) * 1997-05-27 1998-12-03 Memc Electronic Materials, Inc. Secondary edge reflector for horizontal reactor

Also Published As

Publication number Publication date
JPH07100863B2 (en) 1995-11-01
DE3852642T2 (en) 1995-07-27
JPH03500549A (en) 1991-02-07
EP0363437B1 (en) 1994-12-28
ATE116381T1 (en) 1995-01-15
EP0363437A1 (en) 1990-04-18
US4836138A (en) 1989-06-06
SG38910G (en) 1995-09-01
HK76095A (en) 1995-05-26
EP0363437A4 (en) 1990-11-28
DE3852642D1 (en) 1995-02-09

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