FR2436496A1 - Procede de diffusion d'aluminium en tube ouvert engendrant simultanement une diffusion d'isolation plus profonde - Google Patents

Procede de diffusion d'aluminium en tube ouvert engendrant simultanement une diffusion d'isolation plus profonde

Info

Publication number
FR2436496A1
FR2436496A1 FR7923123A FR7923123A FR2436496A1 FR 2436496 A1 FR2436496 A1 FR 2436496A1 FR 7923123 A FR7923123 A FR 7923123A FR 7923123 A FR7923123 A FR 7923123A FR 2436496 A1 FR2436496 A1 FR 2436496A1
Authority
FR
France
Prior art keywords
diffusion
aluminum
pellet
tube
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7923123A
Other languages
English (en)
Other versions
FR2436496B1 (fr
Inventor
Mike Fushing Chang
Alfred Roesch
Richard William Kennedy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of FR2436496A1 publication Critical patent/FR2436496A1/fr
Application granted granted Critical
Publication of FR2436496B1 publication Critical patent/FR2436496B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)

Abstract

Procédé plus court de diffusion. Il comprend : - l'obtention d'une pastille de semi-conducteur; - l'application sélective d'un motif en aluminium sur une première surface de la pastille, seulement sur les zones au-dessous desquelles on souhaite mettre en oeuvre une diffusion d'isolation relativement profonde; - l'insertion de la pastille dans un tube de diffusion ouvert 12; - l'introduction d'un courant de gaz inerte à une première extrémité 16 du tube de diffusion, et échappement du gaz à la seconde extrémité 18 du tube; - le chauffage du tube à une température suffisante pour faire diffuser l'aluminium du motif directement dans la masse de la pastille qui se trouve sous le motif pour former les régions de diffusion d'isolation profondes, et pour vaporiser encore l'aluminium et le faire diffuser à travers la surface de la pastille non recouverte par le motif pour former une nappe de diffusion.
FR7923123A 1978-09-18 1979-09-17 Procede de diffusion d'aluminium en tube ouvert engendrant simultanement une diffusion d'isolation plus profonde Granted FR2436496A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/943,451 US4188245A (en) 1978-09-18 1978-09-18 Selective open tube aluminum diffusion

Publications (2)

Publication Number Publication Date
FR2436496A1 true FR2436496A1 (fr) 1980-04-11
FR2436496B1 FR2436496B1 (fr) 1984-08-24

Family

ID=25479691

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7923123A Granted FR2436496A1 (fr) 1978-09-18 1979-09-17 Procede de diffusion d'aluminium en tube ouvert engendrant simultanement une diffusion d'isolation plus profonde

Country Status (6)

Country Link
US (1) US4188245A (fr)
JP (1) JPS5837977B2 (fr)
DE (1) DE2937518A1 (fr)
FR (1) FR2436496A1 (fr)
GB (1) GB2031649B (fr)
IT (1) IT1123144B (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5824007B2 (ja) * 1979-07-16 1983-05-18 株式会社日立製作所 半導体装置の製造方法
EP0709878B1 (fr) * 1994-10-24 1998-04-01 Naoetsu Electronics Company Méthode pour la préparation de substrats individuels à partir d'une tranche de silicium semi-conducteur
FR2785089B1 (fr) 1998-10-23 2002-03-01 St Microelectronics Sa Realisation de mur d'isolement
US7361412B2 (en) * 2000-05-02 2008-04-22 Johns Hopkins University Nanostructured soldered or brazed joints made with reactive multilayer foils
US6736942B2 (en) * 2000-05-02 2004-05-18 Johns Hopkins University Freestanding reactive multilayer foils
CN104217932B (zh) * 2014-09-15 2016-11-30 吉林华微电子股份有限公司 提高扩散炉首尾芯片参数一致性的方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2301093A1 (fr) * 1975-02-15 1976-09-10 Itt Methode de diffusion de regions isolantes dans un substrat semi-conducteur

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2770761A (en) * 1954-12-16 1956-11-13 Bell Telephone Labor Inc Semiconductor translators containing enclosed active junctions
US2813048A (en) * 1954-06-24 1957-11-12 Bell Telephone Labor Inc Temperature gradient zone-melting
GB1264265A (fr) * 1969-03-13 1972-02-16
US3972838A (en) * 1973-11-01 1976-08-03 Denki Kagaku Kogyo Kabushiki Kaisha Composition for diffusing phosphorus
GB1536545A (en) * 1975-03-26 1978-12-20 Mullard Ltd Semiconductor device manufacture

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2301093A1 (fr) * 1975-02-15 1976-09-10 Itt Methode de diffusion de regions isolantes dans un substrat semi-conducteur

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ABJP/78 *

Also Published As

Publication number Publication date
JPS5837977B2 (ja) 1983-08-19
GB2031649A (en) 1980-04-23
DE2937518A1 (de) 1980-03-27
IT7925708A0 (it) 1979-09-14
US4188245A (en) 1980-02-12
JPS5555525A (en) 1980-04-23
GB2031649B (en) 1983-03-30
FR2436496B1 (fr) 1984-08-24
IT1123144B (it) 1986-04-30

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Legal Events

Date Code Title Description
ST Notification of lapse