FR2431749A1 - Systeme de memoire dynamique comprenant un dispositif pour effectuer les operations de regeneration en parallele avec des operations normales de memorisation - Google Patents

Systeme de memoire dynamique comprenant un dispositif pour effectuer les operations de regeneration en parallele avec des operations normales de memorisation

Info

Publication number
FR2431749A1
FR2431749A1 FR7918616A FR7918616A FR2431749A1 FR 2431749 A1 FR2431749 A1 FR 2431749A1 FR 7918616 A FR7918616 A FR 7918616A FR 7918616 A FR7918616 A FR 7918616A FR 2431749 A1 FR2431749 A1 FR 2431749A1
Authority
FR
France
Prior art keywords
memory
operations
regeneration
parallel
dynamic memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7918616A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bull HN Information Systems Italia SpA
Bull HN Information Systems Inc
Original Assignee
Honeywell Information Systems Italia SpA
Honeywell Information Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Information Systems Italia SpA, Honeywell Information Systems Inc filed Critical Honeywell Information Systems Italia SpA
Publication of FR2431749A1 publication Critical patent/FR2431749A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40603—Arbitration, priority and concurrent access to memory cells for read/write or refresh operations
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/14—Handling requests for interconnection or transfer
    • G06F13/16—Handling requests for interconnection or transfer for access to memory bus
    • G06F13/1605—Handling requests for interconnection or transfer for access to memory bus based on arbitration
    • G06F13/161—Handling requests for interconnection or transfer for access to memory bus based on arbitration with latency improvement
    • G06F13/1636—Handling requests for interconnection or transfer for access to memory bus based on arbitration with latency improvement using refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Dram (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)

Abstract

Mémoire dynamique comprenant un dispositif pour effectuer les opérations de regénération parallèlement à des opérations normales de mémorisation. La mémoire comprend au moins deux unités de modules de mémoire dynamique adressables indépendamment comprenant chacune des ensembles d'éléments de mémoire correspondant à un nombre d'emplacements de mémoire, et des circuits d'adressage et de sortie de données séparés. La mémoire comprend en outre des circuits de synchronisation, de régénération et de commande. Les circuits de commande permettent d'engendrer des signaux de régénération d'un emplacement de l'unité de mémoire dans laquelle des données ne sont pas extraites, et d'empêcher une opération de régénération obligatoire afin que des opérations de mémoire puissent être poursuivies sans interruption. Application aux mémoires rapides de systèmes de traitement de données.
FR7918616A 1978-07-20 1979-07-18 Systeme de memoire dynamique comprenant un dispositif pour effectuer les operations de regeneration en parallele avec des operations normales de memorisation Withdrawn FR2431749A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/926,480 US4185323A (en) 1978-07-20 1978-07-20 Dynamic memory system which includes apparatus for performing refresh operations in parallel with normal memory operations

Publications (1)

Publication Number Publication Date
FR2431749A1 true FR2431749A1 (fr) 1980-02-15

Family

ID=25453264

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7918616A Withdrawn FR2431749A1 (fr) 1978-07-20 1979-07-18 Systeme de memoire dynamique comprenant un dispositif pour effectuer les operations de regeneration en parallele avec des operations normales de memorisation

Country Status (7)

Country Link
US (1) US4185323A (fr)
JP (1) JPS5517896A (fr)
AU (1) AU530887B2 (fr)
CA (1) CA1132717A (fr)
DE (1) DE2928488A1 (fr)
FR (1) FR2431749A1 (fr)
GB (1) GB2026218B (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2456435A1 (fr) * 1979-05-07 1980-12-05 Honeywell Inf Systems Circuit generateur de signaux de synchronisation, a lignes a retard
EP0033673A2 (fr) * 1980-01-17 1981-08-12 COMPAGNIE INTERNATIONALE POUR L'INFORMATIQUE CII - HONEYWELL BULL (dite CII-HB) Procédé de rafraichissement pour banc de mémoire à circuit "MOS" et séquenceur correspondant

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4249247A (en) * 1979-01-08 1981-02-03 Ncr Corporation Refresh system for dynamic RAM memory
US4369510A (en) * 1980-07-25 1983-01-18 Honeywell Information Systems Inc. Soft error rewrite control system
US4556952A (en) 1981-08-12 1985-12-03 International Business Machines Corporation Refresh circuit for dynamic memory of a data processor employing a direct memory access controller
US4432055A (en) * 1981-09-29 1984-02-14 Honeywell Information Systems Inc. Sequential word aligned addressing apparatus
US4558429A (en) * 1981-12-17 1985-12-10 Honeywell Information Systems Inc. Pause apparatus for a memory controller with interleaved queuing apparatus
US4594656A (en) * 1982-06-14 1986-06-10 Moffett Richard C Memory refresh apparatus
US4723204A (en) * 1982-07-07 1988-02-02 Gte Automatic Electric Incorporated Dynamic RAM refresh circuit
JPS59140694A (ja) * 1983-01-31 1984-08-13 Sharp Corp ダイナミツクｒａｍのリフレツシユ方法
US4621320A (en) * 1983-10-24 1986-11-04 Sperry Corporation Multi-user read-ahead memory
US4625296A (en) * 1984-01-17 1986-11-25 The Perkin-Elmer Corporation Memory refresh circuit with varying system transparency
US4725987A (en) * 1985-10-23 1988-02-16 Eastman Kodak Company Architecture for a fast frame store using dynamic RAMS
US4700330A (en) * 1985-10-30 1987-10-13 Digital Equipment Corporation Memory for a digital data processing system including circuit for controlling refresh operations during power-up and power-down conditions
US4933908A (en) * 1988-10-28 1990-06-12 Unisys Corporation Fault detection in memory refreshing system
US4989180A (en) * 1989-03-10 1991-01-29 Board Of Regents, The University Of Texas System Dynamic memory with logic-in-refresh
US5777608A (en) * 1989-03-10 1998-07-07 Board Of Regents, The University Of Texas System Apparatus and method for in-parallel scan-line graphics rendering using content-searchable memories
US5758148A (en) * 1989-03-10 1998-05-26 Board Of Regents, The University Of Texas System System and method for searching a data base using a content-searchable memory
EP0465050B1 (fr) * 1990-06-19 1997-09-03 Dell Usa L.P. Calculateur numérique ayant un système de rafraîchissement séquentiel d'une mémoire RAM dynamique
US5265231A (en) * 1991-02-08 1993-11-23 Thinking Machines Corporation Refresh control arrangement and a method for refreshing a plurality of random access memory banks in a memory system
US5465339A (en) * 1991-02-27 1995-11-07 Vlsi Technology, Inc. Decoupled refresh on local and system busses in a PC/at or similar microprocessor environment
GB2265035B (en) * 1992-03-12 1995-11-22 Apple Computer Method and apparatus for improved dram refresh operations
KR950006332B1 (ko) * 1992-11-19 1995-06-14 삼성전자주식회사 메모리 데이터의 고속 억세스 회로
JPH08129882A (ja) * 1994-10-31 1996-05-21 Mitsubishi Electric Corp 半導体記憶装置
US6148034A (en) * 1996-12-05 2000-11-14 Linden Technology Limited Apparatus and method for determining video encoding motion compensation vectors
US6005818A (en) * 1998-01-20 1999-12-21 Stmicroelectronics, Inc. Dynamic random access memory device with a latching mechanism that permits hidden refresh operations
US6118719A (en) * 1998-05-20 2000-09-12 International Business Machines Corporation Self-initiated self-refresh mode for memory modules
US6812762B2 (en) * 2001-09-07 2004-11-02 Freescale Semiconductor, Inc. Fast mono-cycle generating circuit using full rail swing logic circuits
JP3964841B2 (ja) * 2003-08-29 2007-08-22 株式会社東芝 半導体集積回路装置
US9911485B2 (en) * 2013-11-11 2018-03-06 Qualcomm Incorporated Method and apparatus for refreshing a memory cell

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3846765A (en) * 1973-02-14 1974-11-05 Monolithic Syst Corp Dynamic cell semiconductor memory with interlace refresh
GB1452514A (en) * 1972-09-29 1976-10-13 Siemens Ag Data store information regeneration

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3737879A (en) * 1972-01-05 1973-06-05 Mos Technology Inc Self-refreshing memory
US3790961A (en) * 1972-06-09 1974-02-05 Advanced Memory Syst Inc Random access dynamic semiconductor memory system
US4028675A (en) * 1973-05-14 1977-06-07 Hewlett-Packard Company Method and apparatus for refreshing semiconductor memories in multi-port and multi-module memory system
IT1041882B (it) * 1975-08-20 1980-01-10 Honeywell Inf Systems Memoria dinamica a semiconduttori e relativo sistema di recarica

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1452514A (en) * 1972-09-29 1976-10-13 Siemens Ag Data store information regeneration
US3846765A (en) * 1973-02-14 1974-11-05 Monolithic Syst Corp Dynamic cell semiconductor memory with interlace refresh

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/73 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2456435A1 (fr) * 1979-05-07 1980-12-05 Honeywell Inf Systems Circuit generateur de signaux de synchronisation, a lignes a retard
EP0033673A2 (fr) * 1980-01-17 1981-08-12 COMPAGNIE INTERNATIONALE POUR L'INFORMATIQUE CII - HONEYWELL BULL (dite CII-HB) Procédé de rafraichissement pour banc de mémoire à circuit "MOS" et séquenceur correspondant
EP0033673A3 (en) * 1980-01-17 1981-08-19 Compagnie Internationale Pour L'informatique Cii - Honeywell Bull (Dite Cii-Hb) Mos circuit memory refresh method and corresponding control circuit

Also Published As

Publication number Publication date
US4185323A (en) 1980-01-22
DE2928488A1 (de) 1980-01-31
CA1132717A (fr) 1982-09-28
AU530887B2 (en) 1983-08-04
GB2026218B (en) 1983-01-19
GB2026218A (en) 1980-01-30
JPS5517896A (en) 1980-02-07
AU4881779A (en) 1980-01-24

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Legal Events

Date Code Title Description
RE Withdrawal of published application