FR2426335B1 - - Google Patents

Info

Publication number
FR2426335B1
FR2426335B1 FR7814890A FR7814890A FR2426335B1 FR 2426335 B1 FR2426335 B1 FR 2426335B1 FR 7814890 A FR7814890 A FR 7814890A FR 7814890 A FR7814890 A FR 7814890A FR 2426335 B1 FR2426335 B1 FR 2426335B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7814890A
Other versions
FR2426335A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7814890A priority Critical patent/FR2426335A1/fr
Priority to US06/037,784 priority patent/US4219368A/en
Priority to CA327,400A priority patent/CA1128181A/fr
Priority to GB7917123A priority patent/GB2030001B/en
Priority to JP6141879A priority patent/JPS54152881A/ja
Priority to DE19792920108 priority patent/DE2920108A1/de
Publication of FR2426335A1 publication Critical patent/FR2426335A1/fr
Application granted granted Critical
Publication of FR2426335B1 publication Critical patent/FR2426335B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0475—PV cell arrays made by cells in a planar, e.g. repetitive, configuration on a single semiconductor substrate; PV cell microarrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/047—PV cell arrays including PV cells having multiple vertical junctions or multiple V-groove junctions formed in a semiconductor substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
FR7814890A 1978-05-19 1978-05-19 Dispositif semi-conducteur monolithique comportant une pluralite de cellules photosensibles Granted FR2426335A1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR7814890A FR2426335A1 (fr) 1978-05-19 1978-05-19 Dispositif semi-conducteur monolithique comportant une pluralite de cellules photosensibles
US06/037,784 US4219368A (en) 1978-05-19 1979-05-10 Semiconductor device having a number of series-arranged photosensitive cells
CA327,400A CA1128181A (fr) 1978-05-19 1979-05-10 Dispositif a semiconducteur ayant plusieurs cellules photosensibles montees en serie
GB7917123A GB2030001B (en) 1978-05-19 1979-05-16 Semiconductor device having a number of series-arranged photo-sensitive cells
JP6141879A JPS54152881A (en) 1978-05-19 1979-05-17 Semiconductor device
DE19792920108 DE2920108A1 (de) 1978-05-19 1979-05-18 Halbleiteranordnung mit einer anzahl in reihe geschalteter photoempfindlicher zellen

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7814890A FR2426335A1 (fr) 1978-05-19 1978-05-19 Dispositif semi-conducteur monolithique comportant une pluralite de cellules photosensibles

Publications (2)

Publication Number Publication Date
FR2426335A1 FR2426335A1 (fr) 1979-12-14
FR2426335B1 true FR2426335B1 (fr) 1980-09-19

Family

ID=9208458

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7814890A Granted FR2426335A1 (fr) 1978-05-19 1978-05-19 Dispositif semi-conducteur monolithique comportant une pluralite de cellules photosensibles

Country Status (6)

Country Link
US (1) US4219368A (fr)
JP (1) JPS54152881A (fr)
CA (1) CA1128181A (fr)
DE (1) DE2920108A1 (fr)
FR (1) FR2426335A1 (fr)
GB (1) GB2030001B (fr)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4278473A (en) * 1979-08-24 1981-07-14 Varian Associates, Inc. Monolithic series-connected solar cell
DE3038910A1 (de) * 1980-10-15 1986-06-19 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur herstellung eines infrarotempfindlichen silizium-substrats mit integrierter verarbeitungselektronik
US4431858A (en) * 1982-05-12 1984-02-14 University Of Florida Method of making quasi-grain boundary-free polycrystalline solar cell structure and solar cell structure obtained thereby
US4694561A (en) * 1984-11-30 1987-09-22 American Telephone And Telegraph Company, At&T Bell Laboratories Method of making high-performance trench capacitors for DRAM cells
JPH0831617B2 (ja) * 1990-04-18 1996-03-27 三菱電機株式会社 太陽電池及びその製造方法
US5639314A (en) * 1993-06-29 1997-06-17 Sanyo Electric Co., Ltd. Photovoltaic device including plural interconnected photoelectric cells, and method of making the same
DE19730329C2 (de) * 1997-07-15 2001-02-15 Siemens Ag Integriertes Fotozellenarray mit PN-Isolation
US7709921B2 (en) 2008-08-27 2010-05-04 Udt Sensors, Inc. Photodiode and photodiode array with improved performance characteristics
US8519503B2 (en) 2006-06-05 2013-08-27 Osi Optoelectronics, Inc. High speed backside illuminated, front side contact photodiode array
US8686529B2 (en) * 2010-01-19 2014-04-01 Osi Optoelectronics, Inc. Wavelength sensitive sensor photodiodes
JP2005045125A (ja) * 2003-07-24 2005-02-17 Hamamatsu Photonics Kk 光検出素子の製造方法
WO2005060011A1 (fr) * 2003-12-16 2005-06-30 National University Corporation Shizuoka University Detecteur de rayonnement haute energie et procede de fabrication associe
US8742251B2 (en) * 2006-12-20 2014-06-03 Jds Uniphase Corporation Multi-segment photovoltaic power converter with a center portion
WO2010031011A2 (fr) 2008-09-15 2010-03-18 Udt Sensors, Inc. Photodiode en arête de poisson à couche active mince comportant une couche n+ peu profonde et son procédé de fabrication
US8633374B2 (en) * 2008-12-18 2014-01-21 Gtat Corporation Photovoltaic cell comprising contact regions doped through a lamina
US8399909B2 (en) 2009-05-12 2013-03-19 Osi Optoelectronics, Inc. Tetra-lateral position sensing detector
US8101451B1 (en) * 2010-12-29 2012-01-24 Twin Creeks Technologies, Inc. Method to form a device including an annealed lamina and having amorphous silicon on opposing faces
US8912615B2 (en) 2013-01-24 2014-12-16 Osi Optoelectronics, Inc. Shallow junction photodiode for detecting short wavelength light
FR3006107B1 (fr) * 2013-05-22 2015-06-26 Electricite De France Procede de fabrication d'un systeme photovoltaique a concentration de lumiere
EP3333863A4 (fr) * 2015-08-06 2019-03-20 Fujikura Ltd. Élément de conversion photoélectrique

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1010476A (en) * 1962-01-15 1965-11-17 Secr Aviation Improved photo-electric generators
US3546542A (en) * 1967-01-30 1970-12-08 Westinghouse Electric Corp Integrated high voltage solar cell panel
US3994012A (en) * 1975-05-07 1976-11-23 The Regents Of The University Of Minnesota Photovoltaic semi-conductor devices
US4110122A (en) * 1976-05-26 1978-08-29 Massachusetts Institute Of Technology High-intensity, solid-state-solar cell device
GB1553356A (en) * 1976-12-27 1979-09-26 Hamasawa Kogyo Kk Solar battery
US4156309A (en) * 1977-12-23 1979-05-29 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of construction of a multi-cell solar array

Also Published As

Publication number Publication date
US4219368A (en) 1980-08-26
GB2030001A (en) 1980-03-26
CA1128181A (fr) 1982-07-20
FR2426335A1 (fr) 1979-12-14
DE2920108A1 (de) 1979-11-22
JPS6140151B2 (fr) 1986-09-08
JPS54152881A (en) 1979-12-01
GB2030001B (en) 1982-06-30

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Legal Events

Date Code Title Description
CA Change of address
CD Change of name or company name
ST Notification of lapse