GB1010476A - Improved photo-electric generators - Google Patents
Improved photo-electric generatorsInfo
- Publication number
- GB1010476A GB1010476A GB1379/62A GB137962A GB1010476A GB 1010476 A GB1010476 A GB 1010476A GB 1379/62 A GB1379/62 A GB 1379/62A GB 137962 A GB137962 A GB 137962A GB 1010476 A GB1010476 A GB 1010476A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- regions
- conductivity type
- photo
- parts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- 230000000873 masking effect Effects 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 230000005855 radiation Effects 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- 229910052793 cadmium Inorganic materials 0.000 abstract 1
- 238000007906 compression Methods 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0475—PV cell arrays made by cells in a planar, e.g. repetitive, configuration on a single semiconductor substrate; PV cell microarrays
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
1,010,476. Photo-electric devices. MINISTER OF AVIATION. March 4, 1963 [June 15, 1962], No. 1379/62. Heading H1K. A photo-electric generator comprises, Figs. 1 and 2, a plurality of regions 1, 2 and 3, ofsemi-conducting material, one part 6, of each region being of one (P) conductivity type, and another part 4, of each region being of the opposite (N) conductivity type, the two parts together forming a PN junction in each region for receiving radiation L, incident upon the generator, and electrical connections 8, between the regions, connecting the PN junctions in series, the regions being physically joined to each other to produce a solid integral structure, by semi-conductor material 5 of the one (P) conductivity type joined to the parts of the regions of opposite conductivity type. The layer 4 is grown epitaxially on the substrate layer 5 and the layers 6 are diffused into discrete parts of layer 4 by oxide masking and photo litho graphic techniques. Slots 7 are cut through layer 4 to isolate the regions 1, 2 and 3 from one another. The connecting wires 8 and 9 are thermo-compression bonded into the respective parts of the regions. In another embodiment, Fig. 3 (not shown), the slots 7 are replaced by regions of the one (P) conductivity type, deep diffused by masking means into the layer 4. A silicon dioxide layer 14, Fig. 4, may cover the assembly leaving gaps for the radiation to reach the surface 6A of layer 6. The connections 8 of Fig. 1, may be replaced by evaporated metal layers 16 making contact with the respective parts of the regions through holes in the silicon dioxide layer. In another embodiment, Fig. 5, layers 17, corresponding to layer 4 of Fig. 1 are deep diffused into the substrate layer 5. In a modification, Fig. 6 (not shown), of the embodiment of Fig. 3, the substrate layer 5 may be dispensed with. Suitable semi-conductor materials are Si, Ge, In Sb, Ga As, Cd S, and Cd Hg Te.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1379/62A GB1010476A (en) | 1962-01-15 | 1962-01-15 | Improved photo-electric generators |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1379/62A GB1010476A (en) | 1962-01-15 | 1962-01-15 | Improved photo-electric generators |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1010476A true GB1010476A (en) | 1965-11-17 |
Family
ID=9720994
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1379/62A Expired - Lifetime GB1010476A (en) | 1962-01-15 | 1962-01-15 | Improved photo-electric generators |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1010476A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2370362A1 (en) * | 1976-11-03 | 1978-06-02 | Ibm | Photoelectric converter having integral electrical insulation - combining good electrical isolation with max. thermal contact |
| FR2426335A1 (en) * | 1978-05-19 | 1979-12-14 | Radiotechnique Compelec | MONOLITHIC SEMICONDUCTOR DEVICE CONTAINING A PLURALITY OF PHOTOSENSITIVE CELLS |
| WO1981000647A1 (en) * | 1979-08-24 | 1981-03-05 | Varian Associates | Monolithic series-connected solar cell |
| FR2474242A1 (en) * | 1980-01-21 | 1981-07-24 | Solarex Corp | Integrated multicell photovoltaic generator - uses semiconductor wafer with two major surfaces, one having several discrete areas covered by oxide layer |
| US4315096A (en) * | 1980-07-25 | 1982-02-09 | Eastman Kodak Company | Integrated array of photovoltaic cells having minimized shorting losses |
| FR2548443A2 (en) * | 1983-06-30 | 1985-01-04 | Telemecanique Electrique | Enhancement to electric switches using an insulating screen which shears the arc appearing between the contacts |
| US5100480A (en) * | 1990-04-18 | 1992-03-31 | Mitsubishi Denki Kabushiki Kaisha | Solar cell and method for manufacturing the same |
| EP2190017A1 (en) * | 2008-11-20 | 2010-05-26 | SAPHIRE ApS | High voltage semiconductor based wafer |
| WO2010057978A1 (en) | 2008-11-20 | 2010-05-27 | Saphire Aps | High voltage semiconductor based wafer and a solar module having integrated electronic devices |
-
1962
- 1962-01-15 GB GB1379/62A patent/GB1010476A/en not_active Expired - Lifetime
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2370362A1 (en) * | 1976-11-03 | 1978-06-02 | Ibm | Photoelectric converter having integral electrical insulation - combining good electrical isolation with max. thermal contact |
| FR2426335A1 (en) * | 1978-05-19 | 1979-12-14 | Radiotechnique Compelec | MONOLITHIC SEMICONDUCTOR DEVICE CONTAINING A PLURALITY OF PHOTOSENSITIVE CELLS |
| US4219368A (en) * | 1978-05-19 | 1980-08-26 | U.S. Philips Corporation | Semiconductor device having a number of series-arranged photosensitive cells |
| WO1981000647A1 (en) * | 1979-08-24 | 1981-03-05 | Varian Associates | Monolithic series-connected solar cell |
| US4278473A (en) * | 1979-08-24 | 1981-07-14 | Varian Associates, Inc. | Monolithic series-connected solar cell |
| FR2474242A1 (en) * | 1980-01-21 | 1981-07-24 | Solarex Corp | Integrated multicell photovoltaic generator - uses semiconductor wafer with two major surfaces, one having several discrete areas covered by oxide layer |
| US4315096A (en) * | 1980-07-25 | 1982-02-09 | Eastman Kodak Company | Integrated array of photovoltaic cells having minimized shorting losses |
| FR2548443A2 (en) * | 1983-06-30 | 1985-01-04 | Telemecanique Electrique | Enhancement to electric switches using an insulating screen which shears the arc appearing between the contacts |
| US5100480A (en) * | 1990-04-18 | 1992-03-31 | Mitsubishi Denki Kabushiki Kaisha | Solar cell and method for manufacturing the same |
| EP2190017A1 (en) * | 2008-11-20 | 2010-05-26 | SAPHIRE ApS | High voltage semiconductor based wafer |
| WO2010057978A1 (en) | 2008-11-20 | 2010-05-27 | Saphire Aps | High voltage semiconductor based wafer and a solar module having integrated electronic devices |
| US20130340812A1 (en) * | 2008-11-20 | 2013-12-26 | Saphire Solar Technologies Aps | High voltage semiconductor based wafer and a solar module having integrated electronic devices |
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