FR2423910A1 - Electrical magnitude measurement circuit insensitive to radiation - uses two Zener diodes with different levels of previous irradiation connected with FET and amplifier - Google Patents

Electrical magnitude measurement circuit insensitive to radiation - uses two Zener diodes with different levels of previous irradiation connected with FET and amplifier

Info

Publication number
FR2423910A1
FR2423910A1 FR7811816A FR7811816A FR2423910A1 FR 2423910 A1 FR2423910 A1 FR 2423910A1 FR 7811816 A FR7811816 A FR 7811816A FR 7811816 A FR7811816 A FR 7811816A FR 2423910 A1 FR2423910 A1 FR 2423910A1
Authority
FR
France
Prior art keywords
zener diodes
fet
amplifier
radiation
different levels
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7811816A
Other languages
French (fr)
Other versions
FR2423910B1 (en
Inventor
Maurice Bernard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Airbus Group SAS
Original Assignee
Airbus Group SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Airbus Group SAS filed Critical Airbus Group SAS
Priority to FR7811816A priority Critical patent/FR2423910A1/en
Publication of FR2423910A1 publication Critical patent/FR2423910A1/en
Application granted granted Critical
Publication of FR2423910B1 publication Critical patent/FR2423910B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/18—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using Zener diodes
    • G05F3/185—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using Zener diodes and field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Health & Medical Sciences (AREA)
  • Nonlinear Science (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manipulation Of Pulses (AREA)
  • Indication And Recording Devices For Special Purposes And Tariff Metering Devices (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The method uses two Zener diodes (D1, D2. The Zener diodes are preirradiated to different irradiation levels. The diode (D1) which has received the most irradiation is then used in a circuit to define the electrical magnitude. The diode (D2) which has the least irradiation is used to correct the lowering of the voltage characteristic of the first in the case of future common irradiation of the diodes. Both the Zener diodes have the same voltage characteristics. The diodes are used in a circuit which has a voltage divider and a servo loop to control the voltage at the terminals of the voltage divider.
FR7811816A 1978-04-21 1978-04-21 Electrical magnitude measurement circuit insensitive to radiation - uses two Zener diodes with different levels of previous irradiation connected with FET and amplifier Granted FR2423910A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7811816A FR2423910A1 (en) 1978-04-21 1978-04-21 Electrical magnitude measurement circuit insensitive to radiation - uses two Zener diodes with different levels of previous irradiation connected with FET and amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7811816A FR2423910A1 (en) 1978-04-21 1978-04-21 Electrical magnitude measurement circuit insensitive to radiation - uses two Zener diodes with different levels of previous irradiation connected with FET and amplifier

Publications (2)

Publication Number Publication Date
FR2423910A1 true FR2423910A1 (en) 1979-11-16
FR2423910B1 FR2423910B1 (en) 1980-09-26

Family

ID=9207428

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7811816A Granted FR2423910A1 (en) 1978-04-21 1978-04-21 Electrical magnitude measurement circuit insensitive to radiation - uses two Zener diodes with different levels of previous irradiation connected with FET and amplifier

Country Status (1)

Country Link
FR (1) FR2423910A1 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3400306A (en) * 1965-01-18 1968-09-03 Dickson Electronics Corp Irradiated temperature compensated zener diode device
US3667116A (en) * 1969-05-15 1972-06-06 Avio Di Felice Method of manufacturing zener diodes having improved characteristics

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3400306A (en) * 1965-01-18 1968-09-03 Dickson Electronics Corp Irradiated temperature compensated zener diode device
US3667116A (en) * 1969-05-15 1972-06-06 Avio Di Felice Method of manufacturing zener diodes having improved characteristics

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NV2119/70 *

Also Published As

Publication number Publication date
FR2423910B1 (en) 1980-09-26

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