FR2423910B1 - - Google Patents
Info
- Publication number
- FR2423910B1 FR2423910B1 FR7811816A FR7811816A FR2423910B1 FR 2423910 B1 FR2423910 B1 FR 2423910B1 FR 7811816 A FR7811816 A FR 7811816A FR 7811816 A FR7811816 A FR 7811816A FR 2423910 B1 FR2423910 B1 FR 2423910B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/18—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using Zener diodes
- G05F3/185—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using Zener diodes and field-effect transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Health & Medical Sciences (AREA)
- Nonlinear Science (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manipulation Of Pulses (AREA)
- Indication And Recording Devices For Special Purposes And Tariff Metering Devices (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7811816A FR2423910A1 (en) | 1978-04-21 | 1978-04-21 | Electrical magnitude measurement circuit insensitive to radiation - uses two Zener diodes with different levels of previous irradiation connected with FET and amplifier |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7811816A FR2423910A1 (en) | 1978-04-21 | 1978-04-21 | Electrical magnitude measurement circuit insensitive to radiation - uses two Zener diodes with different levels of previous irradiation connected with FET and amplifier |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2423910A1 FR2423910A1 (en) | 1979-11-16 |
FR2423910B1 true FR2423910B1 (en) | 1980-09-26 |
Family
ID=9207428
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7811816A Granted FR2423910A1 (en) | 1978-04-21 | 1978-04-21 | Electrical magnitude measurement circuit insensitive to radiation - uses two Zener diodes with different levels of previous irradiation connected with FET and amplifier |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2423910A1 (en) |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3400306A (en) * | 1965-01-18 | 1968-09-03 | Dickson Electronics Corp | Irradiated temperature compensated zener diode device |
US3667116A (en) * | 1969-05-15 | 1972-06-06 | Avio Di Felice | Method of manufacturing zener diodes having improved characteristics |
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1978
- 1978-04-21 FR FR7811816A patent/FR2423910A1/en active Granted
Also Published As
Publication number | Publication date |
---|---|
FR2423910A1 (en) | 1979-11-16 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
CL | Concession to grant licenses | ||
CL | Concession to grant licenses | ||
ST | Notification of lapse |