FR2409598B1 - Procede pour fabriquer des corps semi-conducteurs a bord profile de forme definie obtenu par attaque chimique et muni d'un revetement en verre - Google Patents

Procede pour fabriquer des corps semi-conducteurs a bord profile de forme definie obtenu par attaque chimique et muni d'un revetement en verre

Info

Publication number
FR2409598B1
FR2409598B1 FR787832104A FR7832104A FR2409598B1 FR 2409598 B1 FR2409598 B1 FR 2409598B1 FR 787832104 A FR787832104 A FR 787832104A FR 7832104 A FR7832104 A FR 7832104A FR 2409598 B1 FR2409598 B1 FR 2409598B1
Authority
FR
France
Prior art keywords
shaped profile
manufacturing semiconductor
glass coating
chemical attack
semiconductor bodies
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR787832104A
Other languages
English (en)
Other versions
FR2409598A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semikron GmbH and Co KG
Original Assignee
Semikron GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semikron GmbH and Co KG filed Critical Semikron GmbH and Co KG
Publication of FR2409598A1 publication Critical patent/FR2409598A1/fr
Application granted granted Critical
Publication of FR2409598B1 publication Critical patent/FR2409598B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Dicing (AREA)
  • Formation Of Insulating Films (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
FR787832104A 1977-11-18 1978-11-14 Procede pour fabriquer des corps semi-conducteurs a bord profile de forme definie obtenu par attaque chimique et muni d'un revetement en verre Expired FR2409598B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19772751485 DE2751485A1 (de) 1977-11-18 1977-11-18 Verfahren zum herstellen von halbleiterkoerpern mit definiertem, durch aetzen erzielten und mit einem glas abgedeckten randprofil

Publications (2)

Publication Number Publication Date
FR2409598A1 FR2409598A1 (fr) 1979-06-15
FR2409598B1 true FR2409598B1 (fr) 1985-07-26

Family

ID=6024000

Family Applications (1)

Application Number Title Priority Date Filing Date
FR787832104A Expired FR2409598B1 (fr) 1977-11-18 1978-11-14 Procede pour fabriquer des corps semi-conducteurs a bord profile de forme definie obtenu par attaque chimique et muni d'un revetement en verre

Country Status (8)

Country Link
US (1) US4228581A (fr)
JP (1) JPS5475990A (fr)
BR (1) BR7807597A (fr)
CH (1) CH635958A5 (fr)
DE (1) DE2751485A1 (fr)
FR (1) FR2409598B1 (fr)
GB (1) GB2008320B (fr)
IT (1) IT1102331B (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2469000A1 (fr) * 1979-10-30 1981-05-08 Silicium Semiconducteur Ssc Structure de thyristor tres haute tension glassive et son procede de fabrication
DE3137695A1 (de) * 1981-09-22 1983-04-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit einem mehrschichten-halbleiterkoerper mit pnpn-schichtfolge und verfahren zu seiner herstellung
DE3211391A1 (de) * 1982-03-27 1983-09-29 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum herstellen einer halbleiteranordnung
JP2776457B2 (ja) * 1992-12-29 1998-07-16 インターナショナル・ビジネス・マシーンズ・コーポレイション 半導体デバイスのクラックストップ形成方法及び半導体デバイス
CN105453250A (zh) * 2013-08-08 2016-03-30 夏普株式会社 半导体元件衬底及其制造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3152939A (en) * 1960-08-12 1964-10-13 Westinghouse Electric Corp Process for preparing semiconductor members
US3535774A (en) * 1968-07-09 1970-10-27 Rca Corp Method of fabricating semiconductor devices
US3608186A (en) * 1969-10-30 1971-09-28 Jearld L Hutson Semiconductor device manufacture with junction passivation
US3852876A (en) * 1973-01-02 1974-12-10 Gen Electric High voltage power transistor and method for making
US3972113A (en) * 1973-05-14 1976-08-03 Mitsubishi Denki Kabushiki Kaisha Process of producing semiconductor devices
JPS5046270A (fr) * 1973-08-29 1975-04-24
JPS51118386A (en) * 1975-04-11 1976-10-18 Hitachi Ltd Semiconductor unit
JPS5299074A (en) * 1976-02-16 1977-08-19 Nec Home Electronics Ltd Production of semiconductor device

Also Published As

Publication number Publication date
DE2751485A1 (de) 1979-05-23
BR7807597A (pt) 1979-06-26
GB2008320B (en) 1982-04-28
GB2008320A (en) 1979-05-31
US4228581A (en) 1980-10-21
FR2409598A1 (fr) 1979-06-15
IT1102331B (it) 1985-10-07
IT7829867A0 (it) 1978-11-16
JPS5475990A (en) 1979-06-18
CH635958A5 (de) 1983-04-29

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Legal Events

Date Code Title Description
ST Notification of lapse