BR7807597A - Processo para producao de corpos semicondutivos em perfil periferico definido obtido por cauterizacao e coberto com vidro - Google Patents
Processo para producao de corpos semicondutivos em perfil periferico definido obtido por cauterizacao e coberto com vidroInfo
- Publication number
- BR7807597A BR7807597A BR7807597A BR7807597A BR7807597A BR 7807597 A BR7807597 A BR 7807597A BR 7807597 A BR7807597 A BR 7807597A BR 7807597 A BR7807597 A BR 7807597A BR 7807597 A BR7807597 A BR 7807597A
- Authority
- BR
- Brazil
- Prior art keywords
- cauterization
- covered
- glass
- production
- profile obtained
- Prior art date
Links
- 239000011521 glass Substances 0.000 title 1
- 230000002093 peripheral effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Dicing (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19772751485 DE2751485A1 (de) | 1977-11-18 | 1977-11-18 | Verfahren zum herstellen von halbleiterkoerpern mit definiertem, durch aetzen erzielten und mit einem glas abgedeckten randprofil |
Publications (1)
Publication Number | Publication Date |
---|---|
BR7807597A true BR7807597A (pt) | 1979-06-26 |
Family
ID=6024000
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR7807597A BR7807597A (pt) | 1977-11-18 | 1978-11-17 | Processo para producao de corpos semicondutivos em perfil periferico definido obtido por cauterizacao e coberto com vidro |
Country Status (8)
Country | Link |
---|---|
US (1) | US4228581A (pt) |
JP (1) | JPS5475990A (pt) |
BR (1) | BR7807597A (pt) |
CH (1) | CH635958A5 (pt) |
DE (1) | DE2751485A1 (pt) |
FR (1) | FR2409598B1 (pt) |
GB (1) | GB2008320B (pt) |
IT (1) | IT1102331B (pt) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2469000A1 (fr) * | 1979-10-30 | 1981-05-08 | Silicium Semiconducteur Ssc | Structure de thyristor tres haute tension glassive et son procede de fabrication |
DE3137695A1 (de) * | 1981-09-22 | 1983-04-21 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit einem mehrschichten-halbleiterkoerper mit pnpn-schichtfolge und verfahren zu seiner herstellung |
DE3211391A1 (de) * | 1982-03-27 | 1983-09-29 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum herstellen einer halbleiteranordnung |
JP2776457B2 (ja) * | 1992-12-29 | 1998-07-16 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 半導体デバイスのクラックストップ形成方法及び半導体デバイス |
CN105453250A (zh) * | 2013-08-08 | 2016-03-30 | 夏普株式会社 | 半导体元件衬底及其制造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3152939A (en) * | 1960-08-12 | 1964-10-13 | Westinghouse Electric Corp | Process for preparing semiconductor members |
US3535774A (en) * | 1968-07-09 | 1970-10-27 | Rca Corp | Method of fabricating semiconductor devices |
US3608186A (en) * | 1969-10-30 | 1971-09-28 | Jearld L Hutson | Semiconductor device manufacture with junction passivation |
US3852876A (en) * | 1973-01-02 | 1974-12-10 | Gen Electric | High voltage power transistor and method for making |
US3972113A (en) * | 1973-05-14 | 1976-08-03 | Mitsubishi Denki Kabushiki Kaisha | Process of producing semiconductor devices |
JPS5046270A (pt) * | 1973-08-29 | 1975-04-24 | ||
JPS51118386A (en) * | 1975-04-11 | 1976-10-18 | Hitachi Ltd | Semiconductor unit |
JPS5299074A (en) * | 1976-02-16 | 1977-08-19 | Nec Home Electronics Ltd | Production of semiconductor device |
-
1977
- 1977-11-18 DE DE19772751485 patent/DE2751485A1/de not_active Ceased
-
1978
- 1978-11-02 CH CH1128178A patent/CH635958A5/de not_active IP Right Cessation
- 1978-11-09 JP JP13738178A patent/JPS5475990A/ja active Pending
- 1978-11-14 US US05/960,649 patent/US4228581A/en not_active Expired - Lifetime
- 1978-11-14 FR FR787832104A patent/FR2409598B1/fr not_active Expired
- 1978-11-16 IT IT29867/78A patent/IT1102331B/it active
- 1978-11-17 BR BR7807597A patent/BR7807597A/pt unknown
- 1978-11-17 GB GB7845094A patent/GB2008320B/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
IT7829867A0 (it) | 1978-11-16 |
GB2008320A (en) | 1979-05-31 |
GB2008320B (en) | 1982-04-28 |
US4228581A (en) | 1980-10-21 |
FR2409598B1 (fr) | 1985-07-26 |
JPS5475990A (en) | 1979-06-18 |
DE2751485A1 (de) | 1979-05-23 |
CH635958A5 (de) | 1983-04-29 |
IT1102331B (it) | 1985-10-07 |
FR2409598A1 (fr) | 1979-06-15 |
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