BR7807597A - Processo para producao de corpos semicondutivos em perfil periferico definido obtido por cauterizacao e coberto com vidro - Google Patents

Processo para producao de corpos semicondutivos em perfil periferico definido obtido por cauterizacao e coberto com vidro

Info

Publication number
BR7807597A
BR7807597A BR7807597A BR7807597A BR7807597A BR 7807597 A BR7807597 A BR 7807597A BR 7807597 A BR7807597 A BR 7807597A BR 7807597 A BR7807597 A BR 7807597A BR 7807597 A BR7807597 A BR 7807597A
Authority
BR
Brazil
Prior art keywords
cauterization
covered
glass
production
profile obtained
Prior art date
Application number
BR7807597A
Other languages
English (en)
Inventor
R Maier
M Chadda
Original Assignee
Semikron Gleichrichterbau
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semikron Gleichrichterbau filed Critical Semikron Gleichrichterbau
Publication of BR7807597A publication Critical patent/BR7807597A/pt

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308Chemical or electrical treatment, e.g. electrolytic etching using masks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Dicing (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
BR7807597A 1977-11-18 1978-11-17 Processo para producao de corpos semicondutivos em perfil periferico definido obtido por cauterizacao e coberto com vidro BR7807597A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19772751485 DE2751485A1 (de) 1977-11-18 1977-11-18 Verfahren zum herstellen von halbleiterkoerpern mit definiertem, durch aetzen erzielten und mit einem glas abgedeckten randprofil

Publications (1)

Publication Number Publication Date
BR7807597A true BR7807597A (pt) 1979-06-26

Family

ID=6024000

Family Applications (1)

Application Number Title Priority Date Filing Date
BR7807597A BR7807597A (pt) 1977-11-18 1978-11-17 Processo para producao de corpos semicondutivos em perfil periferico definido obtido por cauterizacao e coberto com vidro

Country Status (8)

Country Link
US (1) US4228581A (pt)
JP (1) JPS5475990A (pt)
BR (1) BR7807597A (pt)
CH (1) CH635958A5 (pt)
DE (1) DE2751485A1 (pt)
FR (1) FR2409598B1 (pt)
GB (1) GB2008320B (pt)
IT (1) IT1102331B (pt)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2469000A1 (fr) * 1979-10-30 1981-05-08 Silicium Semiconducteur Ssc Structure de thyristor tres haute tension glassive et son procede de fabrication
DE3137695A1 (de) * 1981-09-22 1983-04-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit einem mehrschichten-halbleiterkoerper mit pnpn-schichtfolge und verfahren zu seiner herstellung
DE3211391A1 (de) * 1982-03-27 1983-09-29 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum herstellen einer halbleiteranordnung
JP2776457B2 (ja) * 1992-12-29 1998-07-16 インターナショナル・ビジネス・マシーンズ・コーポレイション 半導体デバイスのクラックストップ形成方法及び半導体デバイス
CN105453250A (zh) * 2013-08-08 2016-03-30 夏普株式会社 半导体元件衬底及其制造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3152939A (en) * 1960-08-12 1964-10-13 Westinghouse Electric Corp Process for preparing semiconductor members
US3535774A (en) * 1968-07-09 1970-10-27 Rca Corp Method of fabricating semiconductor devices
US3608186A (en) * 1969-10-30 1971-09-28 Jearld L Hutson Semiconductor device manufacture with junction passivation
US3852876A (en) * 1973-01-02 1974-12-10 Gen Electric High voltage power transistor and method for making
US3972113A (en) * 1973-05-14 1976-08-03 Mitsubishi Denki Kabushiki Kaisha Process of producing semiconductor devices
JPS5046270A (pt) * 1973-08-29 1975-04-24
JPS51118386A (en) * 1975-04-11 1976-10-18 Hitachi Ltd Semiconductor unit
JPS5299074A (en) * 1976-02-16 1977-08-19 Nec Home Electronics Ltd Production of semiconductor device

Also Published As

Publication number Publication date
IT7829867A0 (it) 1978-11-16
GB2008320A (en) 1979-05-31
GB2008320B (en) 1982-04-28
US4228581A (en) 1980-10-21
FR2409598B1 (fr) 1985-07-26
JPS5475990A (en) 1979-06-18
DE2751485A1 (de) 1979-05-23
CH635958A5 (de) 1983-04-29
IT1102331B (it) 1985-10-07
FR2409598A1 (fr) 1979-06-15

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