FR2405557B1 - - Google Patents

Info

Publication number
FR2405557B1
FR2405557B1 FR7824731A FR7824731A FR2405557B1 FR 2405557 B1 FR2405557 B1 FR 2405557B1 FR 7824731 A FR7824731 A FR 7824731A FR 7824731 A FR7824731 A FR 7824731A FR 2405557 B1 FR2405557 B1 FR 2405557B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7824731A
Other versions
FR2405557A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Photon Power Inc
Original Assignee
Photon Power Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Photon Power Inc filed Critical Photon Power Inc
Publication of FR2405557A1 publication Critical patent/FR2405557A1/fr
Application granted granted Critical
Publication of FR2405557B1 publication Critical patent/FR2405557B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
    • H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table
    • H01L31/03365—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table comprising only Cu2X / CdX heterojunctions, X being an element of Group VI of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
FR7824731A 1977-09-08 1978-08-25 Assemblage de piles solaires Granted FR2405557A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US83154477A 1977-09-08 1977-09-08

Publications (2)

Publication Number Publication Date
FR2405557A1 FR2405557A1 (fr) 1979-05-04
FR2405557B1 true FR2405557B1 (fr) 1982-11-12

Family

ID=25259294

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7824731A Granted FR2405557A1 (fr) 1977-09-08 1978-08-25 Assemblage de piles solaires

Country Status (20)

Country Link
JP (1) JPS5441686A (fr)
AU (1) AU517645B2 (fr)
BR (1) BR7805816A (fr)
CA (1) CA1137197A (fr)
DE (1) DE2839038A1 (fr)
EG (1) EG13954A (fr)
ES (1) ES473061A1 (fr)
FR (1) FR2405557A1 (fr)
GB (1) GB1575888A (fr)
GR (1) GR63166B (fr)
IE (1) IE47153B1 (fr)
IL (1) IL55165A (fr)
IN (1) IN149318B (fr)
IT (1) IT1105538B (fr)
NL (1) NL186209C (fr)
OA (1) OA06048A (fr)
PT (1) PT68530A (fr)
TR (1) TR20403A (fr)
YU (1) YU213178A (fr)
ZA (1) ZA783886B (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4281208A (en) * 1979-02-09 1981-07-28 Sanyo Electric Co., Ltd. Photovoltaic device and method of manufacturing thereof
FR2464564A1 (fr) * 1979-08-28 1981-03-06 Rca Corp Batterie solaire au silicium amorphe
US4292092A (en) * 1980-06-02 1981-09-29 Rca Corporation Laser processing technique for fabricating series-connected and tandem junction series-connected solar cells into a solar battery
US4315096A (en) * 1980-07-25 1982-02-09 Eastman Kodak Company Integrated array of photovoltaic cells having minimized shorting losses
US4529829A (en) * 1982-11-24 1985-07-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
JPS59201471A (ja) * 1983-04-29 1984-11-15 Semiconductor Energy Lab Co Ltd 光電変換半導体装置
EP0113959B1 (fr) * 1982-11-24 1993-06-16 Semiconductor Energy Laboratory Co., Ltd. Dispositif de conversion photovoltaique
GB2153144A (en) * 1984-01-13 1985-08-14 Standard Telephones Cables Ltd Circuit packaging
US4530739A (en) * 1984-03-09 1985-07-23 Energy Conversion Devices, Inc. Method of fabricating an electroplated substrate
AU576594B2 (en) * 1984-06-15 1988-09-01 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Heat-resistant thin film photoelectric converter
DE3604917A1 (de) * 1986-02-17 1987-08-27 Messerschmitt Boelkow Blohm Verfahren zur herstellung eines integrierten verbandes in reihe geschalteter duennschicht-solarzellen
DE3712589A1 (de) * 1987-04-14 1988-11-03 Nukem Gmbh Verfahren zur herstellung von in reihe verschalteten duennschicht-solarzellen
AU2004316932A1 (en) * 2004-02-09 2005-09-15 General Electric Company Large-area photovoltaic devices and methods of making same
DE102007032283A1 (de) 2007-07-11 2009-01-15 Stein, Wilhelm, Dr. Dünnschichtsolarzellen-Modul und Verfahren zu dessen Herstellung
JP2010062185A (ja) * 2008-09-01 2010-03-18 Mitsubishi Electric Corp 光電変換装置およびその製造方法
EP2161760B1 (fr) * 2008-09-05 2017-04-12 Semiconductor Energy Laboratory Co., Ltd. Dispositif de conversion photoélectrique

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1037466A (fr) * 1951-05-24 1953-09-17 Westinghouse Freins & Signaux Cellule photo-électrique à couche d'arrêt
US3483038A (en) * 1967-01-05 1969-12-09 Rca Corp Integrated array of thin-film photovoltaic cells and method of making same
US3880633A (en) * 1974-01-08 1975-04-29 Baldwin Co D H Method of coating a glass ribbon on a liquid float bath
DE2415187C3 (de) * 1974-03-29 1979-10-11 Messerschmitt-Boelkow-Blohm Gmbh, 8000 Muenchen Halbleiterbatterie und Verfahren zu deren Herstellung
US3971672A (en) * 1975-02-03 1976-07-27 D. H. Baldwin Company Light diffuser for photovoltaic cell
US4038104A (en) * 1976-06-07 1977-07-26 Kabushiki Kaisha Suwa Seikosha Solar battery
US4042418A (en) * 1976-08-02 1977-08-16 Westinghouse Electric Corporation Photovoltaic device and method of making same

Also Published As

Publication number Publication date
IL55165A (en) 1981-05-20
FR2405557A1 (fr) 1979-05-04
EG13954A (en) 1983-03-31
IL55165A0 (en) 1978-09-29
AU517645B2 (en) 1981-08-13
DE2839038C2 (fr) 1989-07-27
IT1105538B (it) 1985-11-04
IE781675L (en) 1979-03-08
ZA783886B (en) 1979-07-25
JPS6146993B2 (fr) 1986-10-16
CA1137197A (fr) 1982-12-07
BR7805816A (pt) 1979-04-24
PT68530A (en) 1978-10-01
IT7850646A0 (it) 1978-08-08
GR63166B (en) 1979-09-26
NL186209C (nl) 1990-10-01
TR20403A (tr) 1981-06-10
DE2839038A1 (de) 1979-03-22
OA06048A (fr) 1981-06-30
YU213178A (en) 1983-04-30
AU3899878A (en) 1980-02-21
NL7808630A (nl) 1979-03-12
ES473061A1 (es) 1979-11-01
JPS5441686A (en) 1979-04-03
IE47153B1 (en) 1983-12-28
GB1575888A (en) 1980-10-01
IN149318B (fr) 1981-10-24

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Legal Events

Date Code Title Description
TP Transmission of property
TP Transmission of property
TP Transmission of property
ST Notification of lapse