JPS5441686A - Large surface photocell - Google Patents

Large surface photocell

Info

Publication number
JPS5441686A
JPS5441686A JP9551978A JP9551978A JPS5441686A JP S5441686 A JPS5441686 A JP S5441686A JP 9551978 A JP9551978 A JP 9551978A JP 9551978 A JP9551978 A JP 9551978A JP S5441686 A JPS5441686 A JP S5441686A
Authority
JP
Japan
Prior art keywords
large surface
photocell
surface photocell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9551978A
Other languages
Japanese (ja)
Other versions
JPS6146993B2 (en
Inventor
Efu Jiyoodan Jiyon
Emu Ranpukin Kaachisu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Photon Power Inc
Original Assignee
Photon Power Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Photon Power Inc filed Critical Photon Power Inc
Publication of JPS5441686A publication Critical patent/JPS5441686A/en
Publication of JPS6146993B2 publication Critical patent/JPS6146993B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022466Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264Inorganic materials
    • H01L31/0328Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
    • H01L31/0336Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero-junctions, X being an element of Group VI of the Periodic System
    • H01L31/03365Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero-junctions, X being an element of Group VI of the Periodic System comprising only Cu2X / CdX heterojunctions, X being an element of Group VI of the Periodic System
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/0445PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/0445PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0465PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
JP9551978A 1977-09-08 1978-08-07 Large surface photocell Granted JPS5441686A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US83154477A 1977-09-08 1977-09-08

Publications (2)

Publication Number Publication Date
JPS5441686A true JPS5441686A (en) 1979-04-03
JPS6146993B2 JPS6146993B2 (en) 1986-10-16

Family

ID=25259294

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9551978A Granted JPS5441686A (en) 1977-09-08 1978-08-07 Large surface photocell

Country Status (20)

Country Link
JP (1) JPS5441686A (en)
AU (1) AU517645B2 (en)
BR (1) BR7805816A (en)
CA (1) CA1137197A (en)
DE (1) DE2839038A1 (en)
EG (1) EG13954A (en)
ES (1) ES473061A1 (en)
FR (1) FR2405557A1 (en)
GB (1) GB1575888A (en)
GR (1) GR63166B (en)
IE (1) IE47153B1 (en)
IL (1) IL55165A (en)
IN (1) IN149318B (en)
IT (1) IT1105538B (en)
NL (1) NL186209C (en)
OA (1) OA06048A (en)
PT (1) PT68530A (en)
TR (1) TR20403A (en)
YU (1) YU213178A (en)
ZA (1) ZA783886B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007522656A (en) * 2004-02-09 2007-08-09 ゼネラル・エレクトリック・カンパニイ Large area photovoltaic device and method of manufacturing the same
JP2010062185A (en) * 2008-09-01 2010-03-18 Mitsubishi Electric Corp Photoelectric converter and method of manufacturing the same
JP2010087495A (en) * 2008-09-05 2010-04-15 Semiconductor Energy Lab Co Ltd Photoelectric conversion device, and method of manufacturing the same

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4281208A (en) * 1979-02-09 1981-07-28 Sanyo Electric Co., Ltd. Photovoltaic device and method of manufacturing thereof
FR2464564A1 (en) * 1979-08-28 1981-03-06 Rca Corp AMORPHOUS SILICON SOLAR BATTERY
US4292092A (en) * 1980-06-02 1981-09-29 Rca Corporation Laser processing technique for fabricating series-connected and tandem junction series-connected solar cells into a solar battery
US4315096A (en) * 1980-07-25 1982-02-09 Eastman Kodak Company Integrated array of photovoltaic cells having minimized shorting losses
US4527006A (en) * 1982-11-24 1985-07-02 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
KR900004824B1 (en) * 1982-11-24 1990-07-07 가부시끼 가이샤 한도 다이 에네르기 겐뀨쇼 Photo-electronic conversion device and manufacturing method thereof
JPS59201471A (en) * 1983-04-29 1984-11-15 Semiconductor Energy Lab Co Ltd Photoelectric conversion semiconductor device
GB2153144A (en) * 1984-01-13 1985-08-14 Standard Telephones Cables Ltd Circuit packaging
US4530739A (en) * 1984-03-09 1985-07-23 Energy Conversion Devices, Inc. Method of fabricating an electroplated substrate
AU576594B2 (en) * 1984-06-15 1988-09-01 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Heat-resistant thin film photoelectric converter
DE3604917A1 (en) * 1986-02-17 1987-08-27 Messerschmitt Boelkow Blohm METHOD FOR PRODUCING AN INTEGRATED ASSEMBLY OF SERIES THICK-LAYER SOLAR CELLS
DE3712589A1 (en) * 1987-04-14 1988-11-03 Nukem Gmbh METHOD FOR THE PRODUCTION OF SERIES LAYERED SOLAR CELLS
DE102007032283A1 (en) 2007-07-11 2009-01-15 Stein, Wilhelm, Dr. Thin-film solar cell module and method for its production

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1037466A (en) * 1951-05-24 1953-09-17 Westinghouse Freins & Signaux Light barrier with barrier layer
US3483038A (en) * 1967-01-05 1969-12-09 Rca Corp Integrated array of thin-film photovoltaic cells and method of making same
US3880633A (en) * 1974-01-08 1975-04-29 Baldwin Co D H Method of coating a glass ribbon on a liquid float bath
DE2415187C3 (en) * 1974-03-29 1979-10-11 Messerschmitt-Boelkow-Blohm Gmbh, 8000 Muenchen Semiconductor batteries and processes for their manufacture
US3971672A (en) * 1975-02-03 1976-07-27 D. H. Baldwin Company Light diffuser for photovoltaic cell
US4038104A (en) * 1976-06-07 1977-07-26 Kabushiki Kaisha Suwa Seikosha Solar battery
US4042418A (en) * 1976-08-02 1977-08-16 Westinghouse Electric Corporation Photovoltaic device and method of making same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007522656A (en) * 2004-02-09 2007-08-09 ゼネラル・エレクトリック・カンパニイ Large area photovoltaic device and method of manufacturing the same
JP2010062185A (en) * 2008-09-01 2010-03-18 Mitsubishi Electric Corp Photoelectric converter and method of manufacturing the same
JP2010087495A (en) * 2008-09-05 2010-04-15 Semiconductor Energy Lab Co Ltd Photoelectric conversion device, and method of manufacturing the same
US8604334B2 (en) 2008-09-05 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device

Also Published As

Publication number Publication date
IT7850646A0 (en) 1978-08-08
CA1137197A (en) 1982-12-07
IE47153B1 (en) 1983-12-28
IN149318B (en) 1981-10-24
JPS6146993B2 (en) 1986-10-16
ES473061A1 (en) 1979-11-01
IL55165A (en) 1981-05-20
AU517645B2 (en) 1981-08-13
TR20403A (en) 1981-06-10
DE2839038C2 (en) 1989-07-27
AU3899878A (en) 1980-02-21
IL55165A0 (en) 1978-09-29
BR7805816A (en) 1979-04-24
NL186209C (en) 1990-10-01
NL7808630A (en) 1979-03-12
FR2405557B1 (en) 1982-11-12
GR63166B (en) 1979-09-26
OA06048A (en) 1981-06-30
GB1575888A (en) 1980-10-01
ZA783886B (en) 1979-07-25
YU213178A (en) 1983-04-30
PT68530A (en) 1978-10-01
FR2405557A1 (en) 1979-05-04
IE781675L (en) 1979-03-08
EG13954A (en) 1983-03-31
DE2839038A1 (en) 1979-03-22
IT1105538B (en) 1985-11-04

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