FR2377841B1 - - Google Patents
Info
- Publication number
- FR2377841B1 FR2377841B1 FR7716200A FR7716200A FR2377841B1 FR 2377841 B1 FR2377841 B1 FR 2377841B1 FR 7716200 A FR7716200 A FR 7716200A FR 7716200 A FR7716200 A FR 7716200A FR 2377841 B1 FR2377841 B1 FR 2377841B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/002—Continuous growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/005—Simultaneous pulling of more than one crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
- Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/761,941 US4118197A (en) | 1977-01-24 | 1977-01-24 | Cartridge and furnace for crystal growth |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2377841A1 FR2377841A1 (fr) | 1978-08-18 |
| FR2377841B1 true FR2377841B1 (US06878557-20050412-C00065.png) | 1983-12-16 |
Family
ID=25063674
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7716200A Granted FR2377841A1 (fr) | 1977-01-24 | 1977-05-26 | Appareil et cartouche pour la croissance de cristaux a partir d'un bain de fusion |
Country Status (10)
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4335081A (en) * | 1979-01-15 | 1982-06-15 | Mobil Tyco Solar Energy Corporation | Crystal growth furnace with trap doors |
| US4415401A (en) * | 1980-03-10 | 1983-11-15 | Mobil Solar Energy Corporation | Control of atmosphere surrounding crystal growth zone |
| US4267010A (en) * | 1980-06-16 | 1981-05-12 | Mobil Tyco Solar Energy Corporation | Guidance mechanism |
| US4443411A (en) * | 1980-12-15 | 1984-04-17 | Mobil Solar Energy Corporation | Apparatus for controlling the atmosphere surrounding a crystal growth zone |
| US4390505A (en) * | 1981-03-30 | 1983-06-28 | Mobil Solar Energy Corporation | Crystal growth apparatus |
| US4410494A (en) * | 1981-04-13 | 1983-10-18 | Siltec Corporation | Apparatus for controlling flow of molten material between crystal growth furnaces and a replenishment crucible |
| US4937053A (en) * | 1987-03-27 | 1990-06-26 | Mobil Solar Energy Corporation | Crystal growing apparatus |
| KR890700543A (ko) * | 1987-03-27 | 1989-04-25 | 버나드 엠. 길스피 | 결정성장 장치 |
| EP0437775B1 (en) * | 1989-12-22 | 1995-03-08 | Shin-Etsu Handotai Company Limited | Apparatus for producing Czochralski-grown single crystals |
| US5037622A (en) * | 1990-07-13 | 1991-08-06 | Mobil Solar Energy Corporation | Wet-tip die for EFG crystal growth apparatus |
| US6602345B1 (en) | 1999-06-29 | 2003-08-05 | American Crystal Technologies, Inc., | Heater arrangement for crystal growth furnace |
| US6537372B1 (en) | 1999-06-29 | 2003-03-25 | American Crystal Technologies, Inc. | Heater arrangement for crystal growth furnace |
| EP1743055B1 (en) * | 2004-04-15 | 2010-12-29 | Faculdade de Ciencias da Universidade de Lisboa | Method and apparatus for the growth of semiconductor, particularly silicon, ribbons |
| US7959732B1 (en) * | 2005-06-17 | 2011-06-14 | Saint-Gobain Ceramics & Plastics, Inc. | Apparatus and method for monitoring and controlling crystal growth |
| EP2152942A1 (en) * | 2007-06-14 | 2010-02-17 | Evergreen Solar, Inc. | Removable thermal control for ribbon crystal pulling furnaces |
| EP2207910A1 (en) * | 2007-08-31 | 2010-07-21 | Faculdade de Ciencias da Universidade de Lisboa | Method for the production of semiconductor ribbons from a gaseous feedstock |
| CN102124150B (zh) | 2008-08-18 | 2013-07-31 | 长青太阳能股份有限公司 | 控制气载污染物跨晶带表面的转移 |
| US8263914B2 (en) * | 2008-08-27 | 2012-09-11 | AMG IdealCast Corporation | Cartridge heater and method of use |
| US9206525B2 (en) | 2011-11-30 | 2015-12-08 | General Electric Company | Method for configuring a system to grow a crystal by coupling a heat transfer device comprising at least one elongate member beneath a crucible |
| WO2016100031A1 (en) * | 2014-12-15 | 2016-06-23 | Corning Incorporated | Method and apparatus for locating a preform on a mold |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2927008A (en) * | 1956-10-29 | 1960-03-01 | Shockley Transistor Corp | Crystal growing apparatus |
| DE1090868B (de) * | 1958-10-15 | 1960-10-13 | Siemens Ag | Verfahren zum Ziehen von einkristallinen Halbleiterstaeben aus Schmelzen |
| US3124489A (en) * | 1960-05-02 | 1964-03-10 | Method of continuously growing thin strip crystals | |
| DE1193475B (de) * | 1962-08-23 | 1965-05-26 | Westinghouse Electric Corp | Vorrichtung zum Drehen, Heben und Senken des Tiegels beim Ziehen von dendritischen Einkristallen |
| US3291571A (en) * | 1963-12-23 | 1966-12-13 | Gen Motors Corp | Crystal growth |
| US3265469A (en) * | 1964-09-21 | 1966-08-09 | Gen Electric | Crystal growing apparatus |
| US3453352A (en) * | 1964-12-14 | 1969-07-01 | Texas Instruments Inc | Method and apparatus for producing crystalline semiconductor ribbon |
| US3471266A (en) * | 1967-05-29 | 1969-10-07 | Tyco Laboratories Inc | Growth of inorganic filaments |
| US3650703A (en) * | 1967-09-08 | 1972-03-21 | Tyco Laboratories Inc | Method and apparatus for growing inorganic filaments, ribbon from the melt |
| US3591348A (en) * | 1968-01-24 | 1971-07-06 | Tyco Laboratories Inc | Method of growing crystalline materials |
| US3701636A (en) * | 1970-09-23 | 1972-10-31 | Tyco Laboratories Inc | Crystal growing apparatus |
| BE811057A (fr) * | 1974-02-15 | 1974-08-16 | Elphiac Sa | Machine universelle pour l'elaboration de monocristaux de materiaux semiconducteurs ou autres suivant les methodes classiques. |
| US3961905A (en) * | 1974-02-25 | 1976-06-08 | Corning Glass Works | Crucible and heater assembly for crystal growth from a melt |
| DE2557186A1 (de) * | 1975-12-18 | 1977-06-23 | Siemens Ag | Verfahren und vorrichtung zum herstellen von halbleitermaterialstaeben, insbesondere von siliciumstaeben mit grossen durchmessern, durch tiegelfreies zonenschmelzen |
-
1977
- 1977-01-24 US US05/761,941 patent/US4118197A/en not_active Expired - Lifetime
- 1977-04-28 CA CA277,265A patent/CA1087073A/en not_active Expired
- 1977-04-29 GB GB17932/77A patent/GB1539125A/en not_active Expired
- 1977-04-29 GB GB19145/78A patent/GB1539126A/en not_active Expired
- 1977-04-30 IN IN651/CAL/77A patent/IN147431B/en unknown
- 1977-05-03 IL IL51999A patent/IL51999A/xx unknown
- 1977-05-04 AU AU24840/77A patent/AU509354B2/en not_active Expired
- 1977-05-16 NL NL7705395A patent/NL7705395A/xx not_active Application Discontinuation
- 1977-05-20 JP JP52058561A patent/JPS597676B2/ja not_active Expired
- 1977-05-26 FR FR7716200A patent/FR2377841A1/fr active Granted
- 1977-07-04 DE DE19772730161 patent/DE2730161A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| US4118197A (en) | 1978-10-03 |
| GB1539126A (en) | 1979-01-24 |
| JPS597676B2 (ja) | 1984-02-20 |
| CA1087073A (en) | 1980-10-07 |
| IN147431B (US06878557-20050412-C00065.png) | 1980-02-23 |
| JPS5393183A (en) | 1978-08-15 |
| AU509354B2 (en) | 1980-05-08 |
| NL7705395A (nl) | 1978-07-26 |
| FR2377841A1 (fr) | 1978-08-18 |
| GB1539125A (en) | 1979-01-24 |
| IL51999A (en) | 1980-07-31 |
| DE2730161C2 (US06878557-20050412-C00065.png) | 1991-02-21 |
| AU2484077A (en) | 1978-11-09 |
| IL51999A0 (en) | 1977-07-31 |
| DE2730161A1 (de) | 1978-07-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| CD | Change of name or company name | ||
| ST | Notification of lapse |