FR2377137A1 - Empaquetage commun pour dispositifs semiconducteurs a haute frequence, montes en push-pull - Google Patents

Empaquetage commun pour dispositifs semiconducteurs a haute frequence, montes en push-pull

Info

Publication number
FR2377137A1
FR2377137A1 FR7800417A FR7800417A FR2377137A1 FR 2377137 A1 FR2377137 A1 FR 2377137A1 FR 7800417 A FR7800417 A FR 7800417A FR 7800417 A FR7800417 A FR 7800417A FR 2377137 A1 FR2377137 A1 FR 2377137A1
Authority
FR
France
Prior art keywords
zone
semiconductor devices
common
pull
push
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7800417A
Other languages
English (en)
French (fr)
Other versions
FR2377137B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Medical Systems Inc
Original Assignee
Varian Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Associates Inc filed Critical Varian Associates Inc
Publication of FR2377137A1 publication Critical patent/FR2377137A1/fr
Application granted granted Critical
Publication of FR2377137B1 publication Critical patent/FR2377137B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H10W44/20—
    • H10W70/481—
    • H10W76/157—
    • H10W44/226—
    • H10W72/07551—
    • H10W72/50—
    • H10W72/5445—

Landscapes

  • Microwave Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Push-Button Switches (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
FR7800417A 1977-01-07 1978-01-09 Empaquetage commun pour dispositifs semiconducteurs a haute frequence, montes en push-pull Granted FR2377137A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/757,716 US4107728A (en) 1977-01-07 1977-01-07 Package for push-pull semiconductor devices

Publications (2)

Publication Number Publication Date
FR2377137A1 true FR2377137A1 (fr) 1978-08-04
FR2377137B1 FR2377137B1 (enExample) 1984-04-27

Family

ID=25048920

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7800417A Granted FR2377137A1 (fr) 1977-01-07 1978-01-09 Empaquetage commun pour dispositifs semiconducteurs a haute frequence, montes en push-pull

Country Status (6)

Country Link
US (1) US4107728A (enExample)
JP (2) JPS5387165A (enExample)
DE (1) DE2800304C2 (enExample)
FR (1) FR2377137A1 (enExample)
GB (2) GB1598842A (enExample)
NL (1) NL7800032A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0018174A1 (en) * 1979-04-12 1980-10-29 Fujitsu Limited High frequency semiconductor device on an insulating substrate
EP0018091A1 (en) * 1979-03-30 1980-10-29 Fujitsu Limited A semiconductor device having a plurality of semiconductor chip portions
FR2563050A1 (fr) * 1984-04-13 1985-10-18 Thomson Csf Combineur compact de dispositifs semiconducteurs, fonctionnant en hyperfrequences
EP0194133A3 (en) * 1985-03-04 1987-04-01 Tektronix, Inc. Bond wire transmission line
DE3538933A1 (de) * 1985-11-02 1987-05-14 Bbc Brown Boveri & Cie Leistungshalbleitermodul

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4193083A (en) * 1977-01-07 1980-03-11 Varian Associates, Inc. Package for push-pull semiconductor devices
US4213141A (en) * 1978-05-12 1980-07-15 Solid State Scientific Inc. Hybrid transistor
DE3067917D1 (en) * 1979-03-10 1984-06-28 Fujitsu Ltd Constructional arrangement for semiconductor devices
DE3245762A1 (de) * 1982-03-13 1983-09-22 Brown, Boveri & Cie Ag, 6800 Mannheim Halbleiterbauelement in modulbauweise
DE3241508A1 (de) * 1982-11-10 1984-05-10 Brown, Boveri & Cie Ag, 6800 Mannheim Leistungstransistor-modul
JPS59172759A (ja) * 1983-03-22 1984-09-29 Mitsubishi Electric Corp ゲ−トタ−ンオフサイリスタモジユ−ル
JPS6080357A (ja) * 1983-10-08 1985-05-08 Ricoh Co Ltd 電子回路担持装置
JPS61218151A (ja) * 1985-03-23 1986-09-27 Hitachi Ltd 半導体装置
US4996582A (en) * 1988-09-14 1991-02-26 Mitsubishi Denki Kabushiki Kaisha Field effect transistor for microstrip mounting and microstrip-mounted transistor assembly
US5103283A (en) * 1989-01-17 1992-04-07 Hite Larry R Packaged integrated circuit with in-cavity decoupling capacitors
JP2864841B2 (ja) * 1992-02-04 1999-03-08 三菱電機株式会社 高周波高出力トランジスタ
DE4231828C2 (de) * 1992-09-23 1996-05-30 Rohde & Schwarz Transistor-Leistungsverstärker-Anordnung
JP3396541B2 (ja) * 1993-08-30 2003-04-14 株式会社東芝 混成集積回路装置を搭載した回路基板
US6903617B2 (en) 2000-05-25 2005-06-07 Silicon Laboratories Inc. Method and apparatus for synthesizing high-frequency signals for wireless communications
US6529081B1 (en) 2000-06-08 2003-03-04 Zeta, Division Of Sierra Tech Inc. Method of operating a solid state power amplifying device
WO2002005342A1 (en) * 2000-07-06 2002-01-17 Zeta, A Division Of Sierratech, Inc. A solid state power amplifying device
US7109589B2 (en) * 2004-08-26 2006-09-19 Agere Systems Inc. Integrated circuit with substantially perpendicular wire bonds
KR20070116115A (ko) * 2005-03-18 2007-12-06 엔엑스피 비 브이 전자 ｒｆ 장치 및 그 제조 방법
DE102010009984A1 (de) 2009-12-28 2011-06-30 Rohde & Schwarz GmbH & Co. KG, 81671 Verstärkerbaustein mit einem Kompensationselement
US8791767B2 (en) 2010-10-29 2014-07-29 Qualcomm Incorporated Package inductance compensating tunable capacitor circuit
DE102013226989A1 (de) * 2013-12-20 2015-07-09 Rohde & Schwarz Gmbh & Co. Kg Halbleiter-Bauteil mit Chip für den Hochfrequenzbereich
US9576915B2 (en) * 2014-12-24 2017-02-21 Nxp B.V. IC-package interconnect for millimeter wave systems
DE102015212220A1 (de) * 2015-06-30 2017-01-05 TRUMPF Hüttinger GmbH + Co. KG Hochfrequenzverstärkeranordnung
CN107293521B (zh) * 2017-05-27 2019-12-17 中国电子科技集团公司第十三研究所 实现l波段器件50ω阻抗匹配的方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3713006A (en) * 1971-02-08 1973-01-23 Trw Inc Hybrid transistor
US3958195A (en) * 1975-03-21 1976-05-18 Varian Associates R.f. transistor package having an isolated common lead
US3969752A (en) * 1973-12-03 1976-07-13 Power Hybrids, Inc. Hybrid transistor

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3364400A (en) * 1964-10-22 1968-01-16 Texas Instruments Inc Microwave transistor package
US3489956A (en) * 1966-09-30 1970-01-13 Nippon Electric Co Semiconductor device container
NL6717634A (enExample) * 1967-12-22 1969-06-24
BE754872A (fr) * 1969-08-19 1971-01-18 Western Electric Co Amplificateur differentiel avec montage d'emetteurs isoles paralleles
US3801938A (en) * 1972-05-31 1974-04-02 Trw Inc Package for microwave semiconductor device
US3869677A (en) * 1973-10-18 1975-03-04 Rca Corp Microwave transistor carrier for common base class a operation
US3908185A (en) * 1974-03-06 1975-09-23 Rca Corp High frequency semiconductor device having improved metallized patterns
US3886505A (en) * 1974-04-29 1975-05-27 Rca Corp Semiconductor package having means to tune out output capacitance
US3996603A (en) * 1974-10-18 1976-12-07 Motorola, Inc. RF power semiconductor package and method of manufacture
US3999142A (en) * 1975-11-12 1976-12-21 The United States Of America As Represented By The Secretary Of The Army Variable tuning and feedback on high power microwave transistor carrier amplifier

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3713006A (en) * 1971-02-08 1973-01-23 Trw Inc Hybrid transistor
US3969752A (en) * 1973-12-03 1976-07-13 Power Hybrids, Inc. Hybrid transistor
US3958195A (en) * 1975-03-21 1976-05-18 Varian Associates R.f. transistor package having an isolated common lead

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0018091A1 (en) * 1979-03-30 1980-10-29 Fujitsu Limited A semiconductor device having a plurality of semiconductor chip portions
EP0018174A1 (en) * 1979-04-12 1980-10-29 Fujitsu Limited High frequency semiconductor device on an insulating substrate
FR2563050A1 (fr) * 1984-04-13 1985-10-18 Thomson Csf Combineur compact de dispositifs semiconducteurs, fonctionnant en hyperfrequences
EP0161166A1 (fr) * 1984-04-13 1985-11-13 Thomson-Csf Combineur compact de dispositifs semi-conducteurs, fonctionnant en hyperfréquences
US4839712A (en) * 1984-04-13 1989-06-13 Thomson-Csf Compact combiner for semiconductor devices operating in the ultra-high frequency range
EP0194133A3 (en) * 1985-03-04 1987-04-01 Tektronix, Inc. Bond wire transmission line
DE3538933A1 (de) * 1985-11-02 1987-05-14 Bbc Brown Boveri & Cie Leistungshalbleitermodul

Also Published As

Publication number Publication date
GB1598841A (en) 1981-09-23
US4107728A (en) 1978-08-15
FR2377137B1 (enExample) 1984-04-27
JPS5387165A (en) 1978-08-01
DE2800304C2 (de) 1987-02-26
NL7800032A (nl) 1978-07-11
JPS59229842A (ja) 1984-12-24
GB1598842A (en) 1981-09-23
JPS5733865B2 (enExample) 1982-07-20
DE2800304A1 (de) 1978-07-13

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Legal Events

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ST Notification of lapse