FR2363886A1 - Procede pour la realisation d'un corps muni d'une configuration d'or et corps ainsi realise - Google Patents

Procede pour la realisation d'un corps muni d'une configuration d'or et corps ainsi realise

Info

Publication number
FR2363886A1
FR2363886A1 FR7726548A FR7726548A FR2363886A1 FR 2363886 A1 FR2363886 A1 FR 2363886A1 FR 7726548 A FR7726548 A FR 7726548A FR 7726548 A FR7726548 A FR 7726548A FR 2363886 A1 FR2363886 A1 FR 2363886A1
Authority
FR
France
Prior art keywords
gold
realization
realized
pickling
configuration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7726548A
Other languages
English (en)
Other versions
FR2363886B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2363886A1 publication Critical patent/FR2363886A1/fr
Application granted granted Critical
Publication of FR2363886B1 publication Critical patent/FR2363886B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/14—Etching locally
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76885—By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Une couche de masquage électro-isolante résistant au décapage est appliquée localement sur la surface d'une couche d'or se trouvant sur le corps et des parties découvertes de la surface de la couche d'or sont soumises à un décapage de façon à former la configuration d'or. Lors du décapage, la couche d'or est soumise à un potentiel par rapport à une electrode disposée dans le bain de décapage.
FR7726548A 1976-09-03 1977-09-01 Procede pour la realisation d'un corps muni d'une configuration d'or et corps ainsi realise Granted FR2363886A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7609816A NL7609816A (nl) 1976-09-03 1976-09-03 Werkwijze voor het vervaardigen van een lichaam voorzien met een goudpatroon en lichaam ver- vaardigd volgens de werkwijze.

Publications (2)

Publication Number Publication Date
FR2363886A1 true FR2363886A1 (fr) 1978-03-31
FR2363886B1 FR2363886B1 (fr) 1982-03-26

Family

ID=19826844

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7726548A Granted FR2363886A1 (fr) 1976-09-03 1977-09-01 Procede pour la realisation d'un corps muni d'une configuration d'or et corps ainsi realise

Country Status (8)

Country Link
US (1) US4131525A (fr)
JP (1) JPS5331537A (fr)
CA (1) CA1094502A (fr)
DE (1) DE2739727C3 (fr)
FR (1) FR2363886A1 (fr)
GB (1) GB1531648A (fr)
IT (1) IT1087352B (fr)
NL (1) NL7609816A (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5327328Y2 (fr) * 1973-02-20 1978-07-11
US4454014A (en) * 1980-12-03 1984-06-12 Memorex Corporation Etched article

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1380991A (fr) * 1963-01-29 1964-12-04 Rca Corp Procédé de fabrication de dispositifs semi-conducteurs
US3560358A (en) * 1968-09-12 1971-02-02 Motorola Inc Electrolytic etching of platinum for metallization
FR2203890A1 (fr) * 1972-10-19 1974-05-17 Western Electric Co

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL298059A (fr) * 1962-09-18
US3325384A (en) * 1963-11-13 1967-06-13 Buckbee Mears Co Shaped cathode for electrolytic etching
US3418226A (en) * 1965-05-18 1968-12-24 Ibm Method of electrolytically etching a semiconductor having a single impurity gradient
JPS4985966A (fr) * 1972-12-22 1974-08-17

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1380991A (fr) * 1963-01-29 1964-12-04 Rca Corp Procédé de fabrication de dispositifs semi-conducteurs
US3560358A (en) * 1968-09-12 1971-02-02 Motorola Inc Electrolytic etching of platinum for metallization
FR2203890A1 (fr) * 1972-10-19 1974-05-17 Western Electric Co

Also Published As

Publication number Publication date
CA1094502A (fr) 1981-01-27
DE2739727B2 (de) 1980-12-04
FR2363886B1 (fr) 1982-03-26
GB1531648A (en) 1978-11-08
JPS5331537A (en) 1978-03-24
DE2739727C3 (de) 1982-01-07
DE2739727A1 (de) 1978-03-16
US4131525A (en) 1978-12-26
IT1087352B (it) 1985-06-04
JPS5536709B2 (fr) 1980-09-22
NL7609816A (nl) 1978-03-07

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Legal Events

Date Code Title Description
ST Notification of lapse