FR2360998B1 - - Google Patents
Info
- Publication number
- FR2360998B1 FR2360998B1 FR7724317A FR7724317A FR2360998B1 FR 2360998 B1 FR2360998 B1 FR 2360998B1 FR 7724317 A FR7724317 A FR 7724317A FR 7724317 A FR7724317 A FR 7724317A FR 2360998 B1 FR2360998 B1 FR 2360998B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US71239276A | 1976-08-06 | 1976-08-06 | |
| US05/793,493 US4127932A (en) | 1976-08-06 | 1977-05-04 | Method of fabricating silicon photodiodes |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2360998A1 FR2360998A1 (fr) | 1978-03-03 |
| FR2360998B1 true FR2360998B1 (enrdf_load_stackoverflow) | 1982-04-09 |
Family
ID=27108828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7724317A Granted FR2360998A1 (fr) | 1976-08-06 | 1977-08-05 | Procede de realisation de photodiodes a eclairement anterieur |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5341193A (enrdf_load_stackoverflow) |
| CA (1) | CA1078948A (enrdf_load_stackoverflow) |
| DE (1) | DE2734726C2 (enrdf_load_stackoverflow) |
| FR (1) | FR2360998A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1561953A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2778047C1 (ru) * | 2021-11-30 | 2022-08-12 | Акционерное общество "Научно-исследовательский институт "Полюс" им. М.Ф. Стельмаха" | Способ приема оптических сигналов |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3001899A1 (de) * | 1980-01-19 | 1981-07-23 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Planar-fototransistor |
| JPS5789271A (en) * | 1980-11-25 | 1982-06-03 | Moririka:Kk | Compound semiconductor element |
| JPS57104275A (en) * | 1980-12-19 | 1982-06-29 | Nec Corp | Light receiving element |
| US4616247A (en) * | 1983-11-10 | 1986-10-07 | At&T Bell Laboratories | P-I-N and avalanche photodiodes |
| CA1301895C (en) * | 1989-01-12 | 1992-05-26 | Robert J. Mcintyre | Silicon avalanche photodiode with low multiplication noise |
| JP2002151729A (ja) | 2000-11-13 | 2002-05-24 | Sony Corp | 半導体装置及びその製造方法 |
| CN114975672B (zh) * | 2021-02-26 | 2024-10-22 | 中国科学院半导体研究所 | 背入射近红外增强硅雪崩光电探测器的结构及制备方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3244567A (en) * | 1962-09-10 | 1966-04-05 | Trw Semiconductors Inc | Impurity diffusion method |
| US3534231A (en) * | 1968-02-15 | 1970-10-13 | Texas Instruments Inc | Low bulk leakage current avalanche photodiode |
| US3886579A (en) * | 1972-07-28 | 1975-05-27 | Hitachi Ltd | Avalanche photodiode |
| JPS49116957A (enrdf_load_stackoverflow) * | 1972-10-25 | 1974-11-08 | ||
| JPS5031777A (enrdf_load_stackoverflow) * | 1973-07-21 | 1975-03-28 |
-
1977
- 1977-06-28 CA CA281,617A patent/CA1078948A/en not_active Expired
- 1977-08-02 DE DE2734726A patent/DE2734726C2/de not_active Expired
- 1977-08-05 FR FR7724317A patent/FR2360998A1/fr active Granted
- 1977-08-05 GB GB32881/77A patent/GB1561953A/en not_active Expired
- 1977-08-06 JP JP9376277A patent/JPS5341193A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2778047C1 (ru) * | 2021-11-30 | 2022-08-12 | Акционерное общество "Научно-исследовательский институт "Полюс" им. М.Ф. Стельмаха" | Способ приема оптических сигналов |
Also Published As
| Publication number | Publication date |
|---|---|
| CA1078948A (en) | 1980-06-03 |
| DE2734726C2 (de) | 1987-04-16 |
| GB1561953A (en) | 1980-03-05 |
| FR2360998A1 (fr) | 1978-03-03 |
| DE2734726A1 (de) | 1978-02-09 |
| JPS6155791B2 (enrdf_load_stackoverflow) | 1986-11-29 |
| JPS5341193A (en) | 1978-04-14 |