FR2357035B1 - - Google Patents

Info

Publication number
FR2357035B1
FR2357035B1 FR7717614A FR7717614A FR2357035B1 FR 2357035 B1 FR2357035 B1 FR 2357035B1 FR 7717614 A FR7717614 A FR 7717614A FR 7717614 A FR7717614 A FR 7717614A FR 2357035 B1 FR2357035 B1 FR 2357035B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7717614A
Other versions
FR2357035A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2357035A1 publication Critical patent/FR2357035A1/fr
Application granted granted Critical
Publication of FR2357035B1 publication Critical patent/FR2357035B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1062—Channel region of field-effect devices of charge coupled devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD
    • H01L29/76875—Two-Phase CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
FR7717614A 1976-07-02 1977-06-02 Dispositif a charges couplees a deux phases Granted FR2357035A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/702,323 US4087832A (en) 1976-07-02 1976-07-02 Two-phase charge coupled device structure

Publications (2)

Publication Number Publication Date
FR2357035A1 FR2357035A1 (fr) 1978-01-27
FR2357035B1 true FR2357035B1 (fr) 1979-03-09

Family

ID=24820749

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7717614A Granted FR2357035A1 (fr) 1976-07-02 1977-06-02 Dispositif a charges couplees a deux phases

Country Status (9)

Country Link
US (1) US4087832A (fr)
JP (1) JPS535582A (fr)
CA (1) CA1106062A (fr)
CH (1) CH614801A5 (fr)
DE (1) DE2722538A1 (fr)
ES (1) ES460301A1 (fr)
FR (1) FR2357035A1 (fr)
GB (1) GB1522926A (fr)
IT (1) IT1114885B (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4358890A (en) * 1978-08-31 1982-11-16 Ibm Corporation Process for making a dual implanted drain extension for bucket brigade device tetrode structure
US4229754A (en) * 1978-12-26 1980-10-21 Rockwell International Corporation CCD Imager with multi-spectral capability
US5202574A (en) * 1980-05-02 1993-04-13 Texas Instruments Incorporated Semiconductor having improved interlevel conductor insulation
DD253709A1 (de) * 1986-09-04 1988-01-27 Werk Fernsehelektronik Veb Register mit kleinstem raster
JP2642523B2 (ja) * 1991-03-19 1997-08-20 株式会社東芝 電荷結合素子を持つ半導体集積回路装置の製造方法
JPH04337670A (ja) * 1991-05-14 1992-11-25 Sony Corp Ｃｃｄシフトレジスタ
JPH05226378A (ja) * 1992-02-17 1993-09-03 Sony Corp 電荷転送素子の製法
US5608242A (en) * 1994-10-11 1997-03-04 Dalsa, Inc. Variable width CCD register with uniform pitch and charge storage capacity
KR100192328B1 (ko) * 1996-04-03 1999-06-15 구본준 양방향 수평전하 전송소자
JP3119586B2 (ja) * 1996-06-28 2000-12-25 日本電気株式会社 電荷転送装置及びその製造方法
JP2874668B2 (ja) * 1996-10-30 1999-03-24 日本電気株式会社 固体撮像装置の製造方法
JP2000307099A (ja) * 1999-04-20 2000-11-02 Nec Corp 電荷転送装置およびその製造方法
KR100513799B1 (ko) * 2003-06-30 2005-09-13 주식회사 하이닉스반도체 트렌치형 소자분리막을 구비한 반도체 소자의 제조 방법
JP4739703B2 (ja) * 2004-07-14 2011-08-03 富士フイルム株式会社 固体撮像素子の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3858232A (en) * 1970-02-16 1974-12-31 Bell Telephone Labor Inc Information storage devices
US3796932A (en) * 1971-06-28 1974-03-12 Bell Telephone Labor Inc Charge coupled devices employing nonuniform concentrations of immobile charge along the information channel
US3801883A (en) * 1972-06-02 1974-04-02 Gen Electric Surface charge signal correlator
IE39611B1 (en) * 1973-08-14 1978-11-22 Siemens Ag Improvements in or relating to two-phase charge coupled devices
US3927468A (en) * 1973-12-28 1975-12-23 Fairchild Camera Instr Co Self aligned CCD element fabrication method therefor
US3932775A (en) * 1974-07-25 1976-01-13 Rca Corporation Interlaced readout of charge stored in a charge coupled image sensing array
US3918997A (en) * 1974-12-06 1975-11-11 Bell Telephone Labor Inc Method of fabricating uniphase charge coupled devices

Also Published As

Publication number Publication date
ES460301A1 (es) 1978-10-01
JPS535582A (en) 1978-01-19
DE2722538A1 (de) 1978-01-05
CH614801A5 (fr) 1979-12-14
JPS617037B2 (fr) 1986-03-03
US4087832A (en) 1978-05-02
GB1522926A (en) 1978-08-31
IT1114885B (it) 1986-01-27
FR2357035A1 (fr) 1978-01-27
CA1106062A (fr) 1981-07-28

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Legal Events

Date Code Title Description
ST Notification of lapse