FR2356277B1 - - Google Patents
Info
- Publication number
- FR2356277B1 FR2356277B1 FR7718024A FR7718024A FR2356277B1 FR 2356277 B1 FR2356277 B1 FR 2356277B1 FR 7718024 A FR7718024 A FR 7718024A FR 7718024 A FR7718024 A FR 7718024A FR 2356277 B1 FR2356277 B1 FR 2356277B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/024—Defect control-gettering and annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/061—Gettering-armorphous layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/093—Laser beam treatment in general
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19762627855 DE2627855A1 (de) | 1976-06-22 | 1976-06-22 | Halbleiterbauelement mit wenigstens zwei, einen pn-uebergang bildenden zonen unterschiedlichen leitungstyps sowie verfahren zu dessen herstellung |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2356277A1 FR2356277A1 (fr) | 1978-01-20 |
| FR2356277B1 true FR2356277B1 (US20110232667A1-20110929-C00004.png) | 1982-05-14 |
Family
ID=5981107
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7718024A Granted FR2356277A1 (fr) | 1976-06-22 | 1977-06-13 | Composant a semi-conducteurs comportant au moins deux zones possedant des types de conductivite differents et formant une jonction pn, et procede pour sa fabrication |
Country Status (6)
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2917455A1 (de) * | 1979-04-30 | 1980-11-13 | Ibm Deutschland | Verfahren zur vollstaendigen ausheilung von gitterdefekten in durch ionenimplantation von phosphor erzeugten n-leitenden zonen einer siliciumhalbleitervorrichtung und zugehoerige siliciumhalbleitervorrichtung |
| US4452645A (en) * | 1979-11-13 | 1984-06-05 | International Business Machines Corporation | Method of making emitter regions by implantation through a non-monocrystalline layer |
| US4301588A (en) * | 1980-02-01 | 1981-11-24 | International Business Machines Corporation | Consumable amorphous or polysilicon emitter process |
| US4315782A (en) * | 1980-07-21 | 1982-02-16 | Rca Corporation | Method of making semiconductor device with passivated rectifying junctions having hydrogenated amorphous regions |
| US4391651A (en) * | 1981-10-15 | 1983-07-05 | The United States Of America As Represented By The Secretary Of The Navy | Method of forming a hyperabrupt interface in a GaAs substrate |
| JPS58132922A (ja) * | 1982-02-01 | 1983-08-08 | Toshiba Corp | 半導体装置の製造方法 |
| US4456489A (en) * | 1982-10-15 | 1984-06-26 | Motorola, Inc. | Method of forming a shallow and high conductivity boron doped layer in silicon |
| JPS59204229A (ja) * | 1983-05-04 | 1984-11-19 | Sony Corp | 半導体装置の製造方法 |
| US4710477A (en) * | 1983-09-12 | 1987-12-01 | Hughes Aircraft Company | Method for forming latch-up immune, multiple retrograde well high density CMOS FET |
| US4633289A (en) * | 1983-09-12 | 1986-12-30 | Hughes Aircraft Company | Latch-up immune, multiple retrograde well high density CMOS FET |
| US4606443A (en) * | 1983-11-30 | 1986-08-19 | Harada Industry Co., Ltd. | Planetary drive with overload clutch release means for an antenna |
| US4617066A (en) * | 1984-11-26 | 1986-10-14 | Hughes Aircraft Company | Process of making semiconductors having shallow, hyperabrupt doped regions by implantation and two step annealing |
| US4775641A (en) * | 1986-09-25 | 1988-10-04 | General Electric Company | Method of making silicon-on-sapphire semiconductor devices |
| GB2213988B (en) * | 1987-12-18 | 1992-02-05 | Matsushita Electric Works Ltd | Semiconductor device |
| JP3313432B2 (ja) * | 1991-12-27 | 2002-08-12 | 株式会社東芝 | 半導体装置及びその製造方法 |
| US5286660A (en) * | 1992-12-24 | 1994-02-15 | Motorola, Inc. | Method for doping a semiconductor wafer having a diffusivity enhancement region |
| JP3311210B2 (ja) * | 1995-07-28 | 2002-08-05 | 株式会社東芝 | 半導体装置およびその製造方法 |
| JP2848439B2 (ja) * | 1995-11-10 | 1999-01-20 | 日本電気株式会社 | 半導体装置の製造方法 |
| US5976956A (en) * | 1997-04-11 | 1999-11-02 | Advanced Micro Devices, Inc. | Method of controlling dopant concentrations using transient-enhanced diffusion prior to gate formation in a device |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3655457A (en) * | 1968-08-06 | 1972-04-11 | Ibm | Method of making or modifying a pn-junction by ion implantation |
| US3810791A (en) * | 1970-08-03 | 1974-05-14 | Texas Instruments Inc | Process for the fabrication of semiconductor materials |
| US3918996A (en) * | 1970-11-02 | 1975-11-11 | Texas Instruments Inc | Formation of integrated circuits using proton enhanced diffusion |
| US3900345A (en) * | 1973-08-02 | 1975-08-19 | Motorola Inc | Thin low temperature epi regions by conversion of an amorphous layer |
| FR2241144A1 (en) * | 1973-08-14 | 1975-03-14 | Radiotechnique Compelec | Semi-conductors for transit time and avalanche diodes - having concentration profiles with steep gradients in opposing directions |
| US3925106A (en) * | 1973-12-26 | 1975-12-09 | Ibm | Ion bombardment method of producing integrated semiconductor circuit resistors of low temperature coefficient of resistance |
| DE2449688C3 (de) * | 1974-10-18 | 1980-07-10 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Herstellung einer dotierten Zone eines Leitfähigkeitstyps in einem Halbleiterkörper |
| JPS51123562A (en) * | 1975-04-21 | 1976-10-28 | Sony Corp | Production method of semiconductor device |
| US4056408A (en) * | 1976-03-17 | 1977-11-01 | Westinghouse Electric Corporation | Reducing the switching time of semiconductor devices by nuclear irradiation |
-
1976
- 1976-06-22 DE DE19762627855 patent/DE2627855A1/de not_active Ceased
-
1977
- 1977-06-13 FR FR7718024A patent/FR2356277A1/fr active Granted
- 1977-06-20 IT IT24841/77A patent/IT1078689B/it active
- 1977-06-21 GB GB25783/77A patent/GB1558937A/en not_active Expired
- 1977-06-22 JP JP7429677A patent/JPS531476A/ja active Pending
-
1978
- 1978-12-13 US US05/969,096 patent/US4216030A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS531476A (en) | 1978-01-09 |
| US4216030A (en) | 1980-08-05 |
| DE2627855A1 (de) | 1977-12-29 |
| IT1078689B (it) | 1985-05-08 |
| GB1558937A (en) | 1980-01-09 |
| FR2356277A1 (fr) | 1978-01-20 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |