FR2350876A1 - Nacelle de croissance d'un materiau semiconducteur et son procede de fabrication - Google Patents
Nacelle de croissance d'un materiau semiconducteur et son procede de fabricationInfo
- Publication number
- FR2350876A1 FR2350876A1 FR7614250A FR7614250A FR2350876A1 FR 2350876 A1 FR2350876 A1 FR 2350876A1 FR 7614250 A FR7614250 A FR 7614250A FR 7614250 A FR7614250 A FR 7614250A FR 2350876 A1 FR2350876 A1 FR 2350876A1
- Authority
- FR
- France
- Prior art keywords
- mould
- boat
- silicon
- monocrystalline
- block
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052710 silicon Inorganic materials 0.000 title abstract 6
- 239000010703 silicon Substances 0.000 title abstract 6
- 239000004065 semiconductor Substances 0.000 title abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 5
- 239000004744 fabric Substances 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 238000010494 dissociation reaction Methods 0.000 abstract 1
- 230000005593 dissociations Effects 0.000 abstract 1
- 230000004927 fusion Effects 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 229910002804 graphite Inorganic materials 0.000 abstract 1
- 239000010439 graphite Substances 0.000 abstract 1
- 238000000465 moulding Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7614250A FR2350876A1 (fr) | 1976-05-12 | 1976-05-12 | Nacelle de croissance d'un materiau semiconducteur et son procede de fabrication |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7614250A FR2350876A1 (fr) | 1976-05-12 | 1976-05-12 | Nacelle de croissance d'un materiau semiconducteur et son procede de fabrication |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2350876A1 true FR2350876A1 (fr) | 1977-12-09 |
| FR2350876B1 FR2350876B1 (ref) | 1978-08-25 |
Family
ID=9173015
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7614250A Granted FR2350876A1 (fr) | 1976-05-12 | 1976-05-12 | Nacelle de croissance d'un materiau semiconducteur et son procede de fabrication |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2350876A1 (ref) |
-
1976
- 1976-05-12 FR FR7614250A patent/FR2350876A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2350876B1 (ref) | 1978-08-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |