FR2349955B1 - - Google Patents

Info

Publication number
FR2349955B1
FR2349955B1 FR7712719A FR7712719A FR2349955B1 FR 2349955 B1 FR2349955 B1 FR 2349955B1 FR 7712719 A FR7712719 A FR 7712719A FR 7712719 A FR7712719 A FR 7712719A FR 2349955 B1 FR2349955 B1 FR 2349955B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7712719A
Other languages
French (fr)
Other versions
FR2349955A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2349955A1 publication Critical patent/FR2349955A1/fr
Application granted granted Critical
Publication of FR2349955B1 publication Critical patent/FR2349955B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/141—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
    • H10P32/1412—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only through the applied layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/1414—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer being silicon, silicide or SIPOS, e.g. polysilicon or porous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/02—Contacts, special
FR7712719A 1976-04-27 1977-04-27 Procede pour la fabrication d'un dispositif semi-conducteur, et dispositif semi-conducteur fabrique de la sorte Granted FR2349955A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7604445A NL7604445A (nl) 1976-04-27 1976-04-27 Werkwijze ter vervaardiging van een halfgelei- derinrichting, en inrichting vervaardigd door toepassing van de werkwijze.

Publications (2)

Publication Number Publication Date
FR2349955A1 FR2349955A1 (fr) 1977-11-25
FR2349955B1 true FR2349955B1 (enExample) 1983-06-17

Family

ID=19826076

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7712719A Granted FR2349955A1 (fr) 1976-04-27 1977-04-27 Procede pour la fabrication d'un dispositif semi-conducteur, et dispositif semi-conducteur fabrique de la sorte

Country Status (8)

Country Link
US (1) US4151006A (enExample)
JP (1) JPS52139386A (enExample)
CA (1) CA1085061A (enExample)
DE (1) DE2718449A1 (enExample)
FR (1) FR2349955A1 (enExample)
GB (1) GB1522291A (enExample)
IT (1) IT1078440B (enExample)
NL (1) NL7604445A (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7810549A (nl) * 1978-10-23 1980-04-25 Philips Nv Werkwijze voor het vervaardigen van een halfgeleider- inrichting.
US4228452A (en) * 1979-05-02 1980-10-14 Eastman Kodak Company Silicon device with uniformly thick polysilicon
US4452645A (en) * 1979-11-13 1984-06-05 International Business Machines Corporation Method of making emitter regions by implantation through a non-monocrystalline layer
US4534806A (en) * 1979-12-03 1985-08-13 International Business Machines Corporation Method for manufacturing vertical PNP transistor with shallow emitter
DE3064143D1 (en) * 1979-12-03 1983-08-18 Ibm Process for producing a vertical pnp transistor and transistor so produced
US4301588A (en) * 1980-02-01 1981-11-24 International Business Machines Corporation Consumable amorphous or polysilicon emitter process
US4380774A (en) * 1980-12-19 1983-04-19 The United States Of America As Represented By The Secretary Of The Navy High-performance bipolar microwave transistor
US4633287A (en) * 1982-08-09 1986-12-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor photoelectric conversion device
US4713355A (en) * 1984-04-16 1987-12-15 Trw Inc. Bipolar transistor construction
US4604150A (en) * 1985-01-25 1986-08-05 At&T Bell Laboratories Controlled boron doping of silicon
USRE35642E (en) * 1987-12-22 1997-10-28 Sgs-Thomson Microelectronics, S.R.L. Integrated high-voltage bipolar power transistor and low voltage MOS power transistor structure in the emitter switching configuration and relative manufacturing process
IT1217323B (it) * 1987-12-22 1990-03-22 Sgs Microelettronica Spa Struttura integrata di transistor bipolare di potenza di alta tensione e di transistor mos di potenza di bassa tensione nella configurazione"emitter switching"e relativo processo di fabbricazione
US5008208A (en) * 1988-12-07 1991-04-16 Honeywell Inc. Method of making planarized, self-aligned bipolar integrated circuits
US5028973A (en) * 1989-06-19 1991-07-02 Harris Corporation Bipolar transistor with high efficient emitter
US5296047A (en) * 1992-01-28 1994-03-22 Hewlett-Packard Co. Epitaxial silicon starting material
US5324684A (en) * 1992-02-25 1994-06-28 Ag Processing Technologies, Inc. Gas phase doping of semiconductor material in a cold-wall radiantly heated reactor under reduced pressure
US5989962A (en) * 1997-09-26 1999-11-23 Texas Instruments Incorporated Semiconductor device having dual gate and method of formation
US7482642B2 (en) * 2005-03-11 2009-01-27 Lsi Corporation Bipolar transistors having controllable temperature coefficient of current gain

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3536547A (en) * 1968-03-25 1970-10-27 Bell Telephone Labor Inc Plasma deposition of oxide coatings on silicon and electron bombardment of portions thereof to be etched selectively
US3775191A (en) * 1971-06-28 1973-11-27 Bell Canada Northern Electric Modification of channel regions in insulated gate field effect transistors
US3847687A (en) * 1972-11-15 1974-11-12 Motorola Inc Methods of forming self aligned transistor structure having polycrystalline contacts
US4027324A (en) * 1972-12-29 1977-05-31 Sony Corporation Bidirectional transistor
US4032957A (en) * 1972-12-29 1977-06-28 Sony Corporation Semiconductor device
US4032956A (en) * 1972-12-29 1977-06-28 Sony Corporation Transistor circuit
US4007474A (en) * 1972-12-29 1977-02-08 Sony Corporation Transistor having an emitter with a low impurity concentration portion and a high impurity concentration portion
US4028155A (en) * 1974-02-28 1977-06-07 Lfe Corporation Process and material for manufacturing thin film integrated circuits
GB1502165A (en) * 1974-04-10 1978-02-22 Sony Corp Semiconductor devices
JPS50137478A (enExample) * 1974-04-18 1975-10-31
DE2429957B2 (de) * 1974-06-21 1980-08-28 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer dotierten Zone eines bestimmten Leitungstyps in einem Halbleiterkörper
DE2449688C3 (de) * 1974-10-18 1980-07-10 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer dotierten Zone eines Leitfähigkeitstyps in einem Halbleiterkörper

Also Published As

Publication number Publication date
NL7604445A (nl) 1977-10-31
DE2718449C2 (enExample) 1987-11-26
US4151006A (en) 1979-04-24
CA1085061A (en) 1980-09-02
JPS6112388B2 (enExample) 1986-04-08
IT1078440B (it) 1985-05-08
FR2349955A1 (fr) 1977-11-25
GB1522291A (en) 1978-08-23
DE2718449A1 (de) 1977-11-10
JPS52139386A (en) 1977-11-21

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Legal Events

Date Code Title Description
ST Notification of lapse