FR2345859B1 - - Google Patents

Info

Publication number
FR2345859B1
FR2345859B1 FR7703513A FR7703513A FR2345859B1 FR 2345859 B1 FR2345859 B1 FR 2345859B1 FR 7703513 A FR7703513 A FR 7703513A FR 7703513 A FR7703513 A FR 7703513A FR 2345859 B1 FR2345859 B1 FR 2345859B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7703513A
Other languages
French (fr)
Other versions
FR2345859A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2345859A1 publication Critical patent/FR2345859A1/fr
Application granted granted Critical
Publication of FR2345859B1 publication Critical patent/FR2345859B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H03K3/288—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable using additional transistors in the input circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/091—Integrated injection logic or merged transistor logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Static Random-Access Memory (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
FR7703513A 1976-03-25 1977-02-01 Circuit logique d'inversion hautement integre Granted FR2345859A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2612666A DE2612666C2 (de) 1976-03-25 1976-03-25 Integrierte, invertierende logische Schaltung

Publications (2)

Publication Number Publication Date
FR2345859A1 FR2345859A1 (fr) 1977-10-21
FR2345859B1 true FR2345859B1 (enrdf_load_stackoverflow) 1980-02-08

Family

ID=5973395

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7703513A Granted FR2345859A1 (fr) 1976-03-25 1977-02-01 Circuit logique d'inversion hautement integre

Country Status (4)

Country Link
JP (1) JPS52117036A (enrdf_load_stackoverflow)
DE (1) DE2612666C2 (enrdf_load_stackoverflow)
FR (1) FR2345859A1 (enrdf_load_stackoverflow)
GB (1) GB1569800A (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2816949C3 (de) * 1978-04-19 1981-07-16 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte Halbleiteranordnung und deren Verwendung zum Aufbau einer Speicheranordnung
US4221977A (en) * 1978-12-11 1980-09-09 Motorola, Inc. Static I2 L ram
DE2855866C3 (de) * 1978-12-22 1981-10-29 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren und Schaltungsanordnung zum Betreiben eines integrierten Halbleiterspeichers
DE2926514A1 (de) 1979-06-30 1981-01-15 Ibm Deutschland Elektrische speicheranordnung und verfahren zu ihrem betrieb
EP0065999B1 (de) * 1981-05-30 1986-05-07 Ibm Deutschland Gmbh Hochintegrierter schneller Speicher mit bipolaren Transistoren
DE3380678D1 (en) * 1983-05-25 1989-11-09 Ibm Deutschland Semiconductor memory
EP0166043B1 (en) * 1984-06-25 1990-09-19 International Business Machines Corporation Mtl storage cell with inherent output multiplex capability
EP0195839B1 (en) * 1985-03-29 1989-08-09 Ibm Deutschland Gmbh Stability testing of semiconductor memories

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3815106A (en) * 1972-05-11 1974-06-04 S Wiedmann Flip-flop memory cell arrangement
DE2021824C3 (de) * 1970-05-05 1980-08-14 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithische Halbleiterschaltung
US3816758A (en) * 1971-04-14 1974-06-11 Ibm Digital logic circuit
DE2356301C3 (de) * 1973-11-10 1982-03-11 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte, logische Schaltung

Also Published As

Publication number Publication date
DE2612666A1 (de) 1977-09-29
DE2612666C2 (de) 1982-11-18
JPS52117036A (en) 1977-10-01
FR2345859A1 (fr) 1977-10-21
GB1569800A (en) 1980-06-18

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Legal Events

Date Code Title Description
ST Notification of lapse