Classifications

• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
  • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
  • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
  • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
  • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
  • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
  • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10B—ELECTRONIC MEMORY DEVICES
  • H10B12/00—Dynamic random access memory [DRAM] devices
  • H10B12/10—DRAM devices comprising bipolar components
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
  • H10D84/401—Combinations of FETs or IGBTs with BJTs
  • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
  • H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors

Landscapes

• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Computer Hardware Design (AREA)
• Static Random-Access Memory (AREA)
• Semiconductor Memories (AREA)
• Dram (AREA)

Applications Claiming Priority (1)

Publications (2)

Family

ID=24657943

Family Applications (1)

Country Status (7)

Families Citing this family (29)

Family Cites Families (6)

• 1976
  • 1976-03-01 US US05/662,492 patent/US4090254A/en not_active Expired - Lifetime
• 1977
  • 1977-01-18 FR FR7702065A patent/FR2343312A1/fr active Granted
  • 1977-02-04 IT IT19958/77A patent/IT1079558B/it active
  • 1977-02-10 JP JP1315477A patent/JPS52106280A/ja active Pending
  • 1977-02-15 GB GB6324/77A patent/GB1571424A/en not_active Expired
  • 1977-02-21 CA CA272,249A patent/CA1097813A/en not_active Expired
  • 1977-02-25 DE DE19772708126 patent/DE2708126A1/de not_active Ceased

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