FR2342555A1 - Procede d'oxydation des surfaces reflechissantes d'un semiconducteur generateur de rayons laser et dispositif obtenu - Google Patents

Procede d'oxydation des surfaces reflechissantes d'un semiconducteur generateur de rayons laser et dispositif obtenu

Info

Publication number
FR2342555A1
FR2342555A1 FR7705592A FR7705592A FR2342555A1 FR 2342555 A1 FR2342555 A1 FR 2342555A1 FR 7705592 A FR7705592 A FR 7705592A FR 7705592 A FR7705592 A FR 7705592A FR 2342555 A1 FR2342555 A1 FR 2342555A1
Authority
FR
France
Prior art keywords
oxidizing
reflecting surfaces
device obtained
laser rays
semiconductor generator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7705592A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2342555A1 publication Critical patent/FR2342555A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Formation Of Insulating Films (AREA)
FR7705592A 1976-02-27 1977-02-25 Procede d'oxydation des surfaces reflechissantes d'un semiconducteur generateur de rayons laser et dispositif obtenu Withdrawn FR2342555A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7602014A NL7602014A (nl) 1976-02-27 1976-02-27 Werkwijze voor het vervaardigen van een halfge- leiderinrichting en halfgeleiderinrichting ver- vaardigd volgens de werkwijze.

Publications (1)

Publication Number Publication Date
FR2342555A1 true FR2342555A1 (fr) 1977-09-23

Family

ID=19825706

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7705592A Withdrawn FR2342555A1 (fr) 1976-02-27 1977-02-25 Procede d'oxydation des surfaces reflechissantes d'un semiconducteur generateur de rayons laser et dispositif obtenu

Country Status (6)

Country Link
JP (1) JPS52104884A (fr)
CA (1) CA1081351A (fr)
DE (1) DE2707721C3 (fr)
FR (1) FR2342555A1 (fr)
GB (1) GB1526632A (fr)
NL (1) NL7602014A (fr)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2163534A1 (fr) * 1971-12-13 1973-07-27 Western Electric Co
US3929589A (en) * 1974-02-08 1975-12-30 Bell Telephone Labor Inc Selective area oxidation of III-V compound semiconductors

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS537353B2 (fr) * 1974-04-27 1978-03-16

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2163534A1 (fr) * 1971-12-13 1973-07-27 Western Electric Co
US3929589A (en) * 1974-02-08 1975-12-30 Bell Telephone Labor Inc Selective area oxidation of III-V compound semiconductors

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/75 *

Also Published As

Publication number Publication date
DE2707721C3 (de) 1981-03-19
GB1526632A (en) 1978-09-27
NL7602014A (nl) 1977-08-30
DE2707721A1 (de) 1977-09-01
JPS52104884A (en) 1977-09-02
DE2707721B2 (de) 1980-07-17
CA1081351A (fr) 1980-07-08

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Legal Events

Date Code Title Description
ST Notification of lapse