FR2342555A1 - Procede d'oxydation des surfaces reflechissantes d'un semiconducteur generateur de rayons laser et dispositif obtenu - Google Patents
Procede d'oxydation des surfaces reflechissantes d'un semiconducteur generateur de rayons laser et dispositif obtenuInfo
- Publication number
- FR2342555A1 FR2342555A1 FR7705592A FR7705592A FR2342555A1 FR 2342555 A1 FR2342555 A1 FR 2342555A1 FR 7705592 A FR7705592 A FR 7705592A FR 7705592 A FR7705592 A FR 7705592A FR 2342555 A1 FR2342555 A1 FR 2342555A1
- Authority
- FR
- France
- Prior art keywords
- oxidizing
- reflecting surfaces
- device obtained
- laser rays
- semiconductor generator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000001590 oxidative effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7602014A NL7602014A (nl) | 1976-02-27 | 1976-02-27 | Werkwijze voor het vervaardigen van een halfge- leiderinrichting en halfgeleiderinrichting ver- vaardigd volgens de werkwijze. |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2342555A1 true FR2342555A1 (fr) | 1977-09-23 |
Family
ID=19825706
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7705592A Withdrawn FR2342555A1 (fr) | 1976-02-27 | 1977-02-25 | Procede d'oxydation des surfaces reflechissantes d'un semiconducteur generateur de rayons laser et dispositif obtenu |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS52104884A (fr) |
CA (1) | CA1081351A (fr) |
DE (1) | DE2707721C3 (fr) |
FR (1) | FR2342555A1 (fr) |
GB (1) | GB1526632A (fr) |
NL (1) | NL7602014A (fr) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2163534A1 (fr) * | 1971-12-13 | 1973-07-27 | Western Electric Co | |
US3929589A (en) * | 1974-02-08 | 1975-12-30 | Bell Telephone Labor Inc | Selective area oxidation of III-V compound semiconductors |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS537353B2 (fr) * | 1974-04-27 | 1978-03-16 |
-
1976
- 1976-02-27 NL NL7602014A patent/NL7602014A/xx not_active Application Discontinuation
-
1977
- 1977-02-23 DE DE19772707721 patent/DE2707721C3/de not_active Expired
- 1977-02-24 CA CA272,581A patent/CA1081351A/fr not_active Expired
- 1977-02-24 GB GB779077A patent/GB1526632A/en not_active Expired
- 1977-02-24 JP JP1874077A patent/JPS52104884A/ja active Pending
- 1977-02-25 FR FR7705592A patent/FR2342555A1/fr not_active Withdrawn
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2163534A1 (fr) * | 1971-12-13 | 1973-07-27 | Western Electric Co | |
US3929589A (en) * | 1974-02-08 | 1975-12-30 | Bell Telephone Labor Inc | Selective area oxidation of III-V compound semiconductors |
Non-Patent Citations (1)
Title |
---|
EXBK/75 * |
Also Published As
Publication number | Publication date |
---|---|
DE2707721C3 (de) | 1981-03-19 |
GB1526632A (en) | 1978-09-27 |
NL7602014A (nl) | 1977-08-30 |
DE2707721A1 (de) | 1977-09-01 |
JPS52104884A (en) | 1977-09-02 |
DE2707721B2 (de) | 1980-07-17 |
CA1081351A (fr) | 1980-07-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |