JPS52104884A - Method of producing semiconductor laser - Google Patents

Method of producing semiconductor laser

Info

Publication number
JPS52104884A
JPS52104884A JP1874077A JP1874077A JPS52104884A JP S52104884 A JPS52104884 A JP S52104884A JP 1874077 A JP1874077 A JP 1874077A JP 1874077 A JP1874077 A JP 1874077A JP S52104884 A JPS52104884 A JP S52104884A
Authority
JP
Japan
Prior art keywords
semiconductor laser
producing semiconductor
producing
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1874077A
Other languages
English (en)
Japanese (ja)
Inventor
Boorusu Teeburugu Rudorufu
Fuan Dongen Teunisu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS52104884A publication Critical patent/JPS52104884A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Formation Of Insulating Films (AREA)
JP1874077A 1976-02-27 1977-02-24 Method of producing semiconductor laser Pending JPS52104884A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7602014A NL7602014A (nl) 1976-02-27 1976-02-27 Werkwijze voor het vervaardigen van een halfge- leiderinrichting en halfgeleiderinrichting ver- vaardigd volgens de werkwijze.

Publications (1)

Publication Number Publication Date
JPS52104884A true JPS52104884A (en) 1977-09-02

Family

ID=19825706

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1874077A Pending JPS52104884A (en) 1976-02-27 1977-02-24 Method of producing semiconductor laser

Country Status (6)

Country Link
JP (1) JPS52104884A (fr)
CA (1) CA1081351A (fr)
DE (1) DE2707721C3 (fr)
FR (1) FR2342555A1 (fr)
GB (1) GB1526632A (fr)
NL (1) NL7602014A (fr)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50140284A (fr) * 1974-04-27 1975-11-10

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE792614A (fr) * 1971-12-13 1973-03-30 Western Electric Co Procede de realisation d'une couche d'oxyde sur un semi-conducteur
US3929589A (en) * 1974-02-08 1975-12-30 Bell Telephone Labor Inc Selective area oxidation of III-V compound semiconductors

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50140284A (fr) * 1974-04-27 1975-11-10

Also Published As

Publication number Publication date
NL7602014A (nl) 1977-08-30
DE2707721B2 (de) 1980-07-17
CA1081351A (fr) 1980-07-08
GB1526632A (en) 1978-09-27
DE2707721A1 (de) 1977-09-01
DE2707721C3 (de) 1981-03-19
FR2342555A1 (fr) 1977-09-23

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