FR2340623A1 - Resistance a valeur reglable - Google Patents

Resistance a valeur reglable

Info

Publication number
FR2340623A1
FR2340623A1 FR7703476A FR7703476A FR2340623A1 FR 2340623 A1 FR2340623 A1 FR 2340623A1 FR 7703476 A FR7703476 A FR 7703476A FR 7703476 A FR7703476 A FR 7703476A FR 2340623 A1 FR2340623 A1 FR 2340623A1
Authority
FR
France
Prior art keywords
value resistance
adjustable value
adjustable
resistance
value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7703476A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2340623A1 publication Critical patent/FR2340623A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/067—Lateral bipolar transistor in combination with diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
FR7703476A 1976-02-09 1977-02-08 Resistance a valeur reglable Withdrawn FR2340623A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/656,295 US4057894A (en) 1976-02-09 1976-02-09 Controllably valued resistor

Publications (1)

Publication Number Publication Date
FR2340623A1 true FR2340623A1 (fr) 1977-09-02

Family

ID=24632452

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7703476A Withdrawn FR2340623A1 (fr) 1976-02-09 1977-02-08 Resistance a valeur reglable

Country Status (7)

Country Link
US (2) US4057894A (fr)
JP (1) JPS5297689A (fr)
DE (1) DE2704647A1 (fr)
FR (1) FR2340623A1 (fr)
GB (1) GB1564849A (fr)
IN (1) IN146793B (fr)
SE (1) SE7701316L (fr)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1094517B (it) * 1978-04-28 1985-08-02 Componenti Elettronici Sgs Ate Procedimento per la fabbricazione di un elemento resistivo filiforme per circuito integrato
FR2449333A1 (fr) * 1979-02-14 1980-09-12 Radiotechnique Compelec Perfectionnement aux dispositifs semi-conducteurs de type darlington
GB2050050B (en) * 1979-05-10 1983-08-03 Philips Electronic Associated Basewidth variation compensation in integrated circuit transistors
US4333171A (en) * 1979-09-04 1982-06-01 Citizen Watch Co., Ltd. Electronic timepiece with diffusion resistor for compensating threshold variations
JPS5685848A (en) * 1979-12-15 1981-07-13 Toshiba Corp Manufacture of bipolar integrated circuit
US4387310A (en) * 1980-08-15 1983-06-07 Communications Satellite Corporation Temperature stabilized semiconductor delay element
US4339707A (en) * 1980-12-24 1982-07-13 Honeywell Inc. Band gap voltage regulator
US4688073A (en) * 1981-03-30 1987-08-18 Goth George R Lateral device structures using self-aligned fabrication techniques
US4458408A (en) * 1981-07-31 1984-07-10 Motorola, Inc. Method for making a light-activated line-operable zero-crossing switch
US4704786A (en) * 1982-08-04 1987-11-10 Westinghouse Electric Corp. Method of forming a lateral bipolar transistor in a groove
JPS6097659A (ja) * 1983-11-01 1985-05-31 Matsushita Electronics Corp 半導体集積回路
US4589002A (en) * 1984-07-18 1986-05-13 Rca Corporation Diode structure
JPH0620110B2 (ja) * 1985-10-07 1994-03-16 日本電気株式会社 半導体装置
US4785339A (en) * 1986-10-03 1988-11-15 Ge Solid State Patents, Inc. Integrated lateral PNP transistor and current limiting resistor
US4812419A (en) * 1987-04-30 1989-03-14 Hewlett-Packard Company Via connection with thin resistivity layer
US5304502A (en) * 1988-11-08 1994-04-19 Yamaha Corporation Process of fabricating semiconductor integrated circuit having conductive strips used as resistor and gate electrode of component transistor
US5134088A (en) * 1990-04-27 1992-07-28 Digital Equipment Corporation Precision resistor in self-aligned silicided mos process
DE19507802C1 (de) * 1995-03-06 1996-05-30 Siemens Ag Verfahren zum Herstellen eines integrierten Widerstandes
DE10338689B4 (de) * 2003-08-22 2007-03-29 Infineon Technologies Ag Widerstandsbauelement und Verfahren zu dessen Abgleich

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3465213A (en) * 1966-06-20 1969-09-02 Frances B Hugle Self-compensating structure for limiting base drive current in transistors
JPS509635B1 (fr) * 1970-09-07 1975-04-14
US3673428A (en) * 1970-09-18 1972-06-27 Rca Corp Input transient protection for complementary insulated gate field effect transistor integrated circuit device
US3879236A (en) * 1971-03-26 1975-04-22 Ibm Method of making a semiconductor resistor
IT946150B (it) * 1971-12-15 1973-05-21 Ates Componenti Elettron Perfezionamento al processo plana re epistssiale per la produzione di circuiti integrati lineari di potenza
JPS515277B2 (fr) * 1971-12-22 1976-02-18
CA997481A (en) * 1972-12-29 1976-09-21 International Business Machines Corporation Dc testing of integrated circuits and a novel integrated circuit structure to facilitate such testing
US4011580A (en) * 1973-05-30 1977-03-08 U.S. Philips Corporation Integrated circuit
NL7307527A (fr) * 1973-05-30 1974-12-03
US3829709A (en) * 1973-08-31 1974-08-13 Micro Components Corp Supply reversal protecton circuit
DE2356301C3 (de) * 1973-11-10 1982-03-11 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte, logische Schaltung

Also Published As

Publication number Publication date
DE2704647A1 (de) 1977-08-11
JPS5297689A (en) 1977-08-16
SE7701316L (sv) 1977-08-10
GB1564849A (en) 1980-04-16
US4100565A (en) 1978-07-11
US4057894A (en) 1977-11-15
IN146793B (fr) 1979-09-15

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Legal Events

Date Code Title Description
ST Notification of lapse