JPS5251871A
(en)
*
|
1975-10-23 |
1977-04-26 |
Rikagaku Kenkyusho |
Projecting method for charge particle beams
|
GB1557924A
(en)
*
|
1976-02-05 |
1979-12-19 |
Western Electric Co |
Irradiation apparatus and methods
|
JPS6051261B2
(ja)
*
|
1976-05-26 |
1985-11-13 |
株式会社東芝 |
荷電粒子ビ−ム描画装置
|
JPS52151568A
(en)
*
|
1976-06-11 |
1977-12-16 |
Jeol Ltd |
Electron beam exposure apparatus
|
US4056730A
(en)
*
|
1976-07-12 |
1977-11-01 |
International Business Machines Corporation |
Apparatus for detecting registration marks on a target such as a semiconductor wafer
|
JPS5316578A
(en)
*
|
1976-07-30 |
1978-02-15 |
Toshiba Corp |
Electron beam exposure apparatus
|
CA1166766A
(en)
*
|
1977-02-23 |
1984-05-01 |
Hans C. Pfeiffer |
Method and apparatus for forming a variable size electron beam
|
US4182958A
(en)
*
|
1977-05-31 |
1980-01-08 |
Rikagaku Kenkyusho |
Method and apparatus for projecting a beam of electrically charged particles
|
GB1598219A
(en)
*
|
1977-08-10 |
1981-09-16 |
Ibm |
Electron beam system
|
US4147937A
(en)
*
|
1977-11-01 |
1979-04-03 |
Fujitsu Limited |
Electron beam exposure system method and apparatus
|
JPS5493364A
(en)
*
|
1977-12-30 |
1979-07-24 |
Fujitsu Ltd |
Exposure system for electron beam
|
DD134582A1
(de)
*
|
1978-01-19 |
1979-03-07 |
Eberhard Hahn |
Verfahren und einrichtung zur justierung einer elektronenstrahlbearbeitungsanlage
|
FR2416549A1
(fr)
*
|
1978-02-03 |
1979-08-31 |
Thomson Csf |
Diaphragme pour dispositif d'optique electronique
|
US4243866A
(en)
*
|
1979-01-11 |
1981-01-06 |
International Business Machines Corporation |
Method and apparatus for forming a variable size electron beam
|
JPS55146931A
(en)
*
|
1979-05-04 |
1980-11-15 |
Hitachi Ltd |
Depicting method by electronic beam
|
JPS55165634A
(en)
*
|
1979-06-11 |
1980-12-24 |
Jeol Ltd |
Device for exposure to electron beam
|
NL7904580A
(nl)
*
|
1979-06-12 |
1980-12-16 |
Philips Nv |
Inrichting voor het schrijven van patronen in een laag op een substraat met een bundel elektrisch geladen deeltjes.
|
US4310743A
(en)
*
|
1979-09-24 |
1982-01-12 |
Hughes Aircraft Company |
Ion beam lithography process and apparatus using step-and-repeat exposure
|
JPS5693318A
(en)
*
|
1979-12-10 |
1981-07-28 |
Fujitsu Ltd |
Electron beam exposure device
|
JPS5753938A
(en)
*
|
1980-09-17 |
1982-03-31 |
Toshiba Corp |
Electron beam exposure apparatus
|
JPS57204125A
(en)
*
|
1981-06-10 |
1982-12-14 |
Hitachi Ltd |
Electron-ray drawing device
|
JPS57209786A
(en)
*
|
1981-06-17 |
1982-12-23 |
Hitachi Ltd |
Electron beam machining device
|
DE3138896A1
(de)
*
|
1981-09-30 |
1983-04-14 |
Siemens AG, 1000 Berlin und 8000 München |
Elektronenoptisches system mit vario-formstrahl zur erzeugung und messung von mikrostrukturen
|
EP0076868B1
(de)
*
|
1981-10-10 |
1987-01-14 |
DR.-ING. RUDOLF HELL GmbH |
Elektronenstrahl-Gravierverfahren und Einrichtung zu seiner Durchführung
|
GB2109538A
(en)
*
|
1981-11-02 |
1983-06-02 |
Philips Electronic Associated |
Electron beam alignment
|
GB2109539A
(en)
*
|
1981-11-02 |
1983-06-02 |
Philips Electronic Associated |
Electron beam alignment
|
JPS58121625A
(ja)
*
|
1981-12-28 |
1983-07-20 |
Fujitsu Ltd |
電子ビ−ム露光装置
|
US4469950A
(en)
*
|
1982-03-04 |
1984-09-04 |
Varian Associates, Inc. |
Charged particle beam exposure system utilizing variable line scan
|
US4698509A
(en)
*
|
1985-02-14 |
1987-10-06 |
Varian Associates, Inc. |
High speed pattern generator for electron beam lithography
|
FR2597259A1
(fr)
*
|
1986-04-15 |
1987-10-16 |
Thomson Csf |
Dispositif a faisceau electronique pour projeter l'image d'un objet sur un echantillon
|
US4837447A
(en)
*
|
1986-05-06 |
1989-06-06 |
Research Triangle Institute, Inc. |
Rasterization system for converting polygonal pattern data into a bit-map
|
US4818885A
(en)
*
|
1987-06-30 |
1989-04-04 |
International Business Machines Corporation |
Electron beam writing method and system using large range deflection in combination with a continuously moving table
|
US5173582A
(en)
*
|
1988-10-31 |
1992-12-22 |
Fujitsu Limited |
Charged particle beam lithography system and method
|
JP2625219B2
(ja)
*
|
1989-10-23 |
1997-07-02 |
株式会社日立製作所 |
電子線描画装置
|
GB2238630B
(en)
*
|
1989-11-29 |
1993-12-22 |
Sundstrand Corp |
Control systems
|
JPH03270215A
(ja)
*
|
1990-03-20 |
1991-12-02 |
Fujitsu Ltd |
荷電粒子ビーム露光方法及び露光装置
|
JP2837515B2
(ja)
*
|
1990-06-20 |
1998-12-16 |
富士通株式会社 |
電子ビーム露光装置
|
US5223719A
(en)
*
|
1990-07-06 |
1993-06-29 |
Fujitsu Limited |
Mask for use in a charged particle beam apparatus including beam passing sections
|
DE4208484C2
(de)
*
|
1992-03-14 |
1998-09-17 |
Ald Vacuum Techn Gmbh |
Magnetisches Ablenksystem für einen Hochleistungs-Elektronenstrahl
|
DE10147133A1
(de)
*
|
2000-10-03 |
2002-06-13 |
Advantest Corp |
Elektronenstrahl-Belichtungsvorrichtung
|
US6619903B2
(en)
*
|
2001-08-10 |
2003-09-16 |
Glenn M. Friedman |
System and method for reticle protection and transport
|
JP4220209B2
(ja)
*
|
2002-09-27 |
2009-02-04 |
株式会社アドバンテスト |
電子ビーム露光装置、偏向装置、及び電子ビーム露光方法
|
IL156719A0
(en)
*
|
2003-06-30 |
2004-01-04 |
Axiomic Technologies Inc |
A multi-stage open ion system in various topologies
|
US7244953B2
(en)
*
|
2005-10-03 |
2007-07-17 |
Applied Materials, Inc. |
Beam exposure writing strategy system and method
|
JP6087154B2
(ja)
|
2013-01-18 |
2017-03-01 |
株式会社ニューフレアテクノロジー |
荷電粒子ビーム描画装置、試料面へのビーム入射角調整方法、および荷電粒子ビーム描画方法
|