FR2337400A1 - Procede et appareil pour l'emmagasinage a forte densite de domaines en forme de bulles - Google Patents
Procede et appareil pour l'emmagasinage a forte densite de domaines en forme de bullesInfo
- Publication number
- FR2337400A1 FR2337400A1 FR7636410A FR7636410A FR2337400A1 FR 2337400 A1 FR2337400 A1 FR 2337400A1 FR 7636410 A FR7636410 A FR 7636410A FR 7636410 A FR7636410 A FR 7636410A FR 2337400 A1 FR2337400 A1 FR 2337400A1
- Authority
- FR
- France
- Prior art keywords
- bubble
- density storage
- shaped domains
- domains
- shaped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0875—Organisation of a plurality of magnetic shift registers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0875—Organisation of a plurality of magnetic shift registers
- G11C19/0883—Means for switching magnetic domains from one path into another path, i.e. transfer switches, swap gates or decoders
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US64597575A | 1975-12-31 | 1975-12-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2337400A1 true FR2337400A1 (fr) | 1977-07-29 |
FR2337400B1 FR2337400B1 (en:Method) | 1980-10-24 |
Family
ID=24591228
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7636410A Granted FR2337400A1 (fr) | 1975-12-31 | 1976-11-29 | Procede et appareil pour l'emmagasinage a forte densite de domaines en forme de bulles |
Country Status (5)
Country | Link |
---|---|
US (1) | US4164029A (en:Method) |
JP (1) | JPS5283140A (en:Method) |
DE (1) | DE2652032A1 (en:Method) |
FR (1) | FR2337400A1 (en:Method) |
GB (1) | GB1527005A (en:Method) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55153189A (en) * | 1979-05-17 | 1980-11-28 | Fujitsu Ltd | Manufacture of magnetic bubble unit |
US4308592A (en) * | 1979-06-29 | 1981-12-29 | International Business Machines Corporation | Patterned kill of magnetoresistive layer in bubble domain chip |
US4249249A (en) * | 1979-12-03 | 1981-02-03 | Bell Telephone Laboratories, Incorporated | Ion-implanted bubble memory |
JPS5680876A (en) * | 1979-12-03 | 1981-07-02 | Fujitsu Ltd | Magnetic bubble memory chip |
US4263662A (en) * | 1979-12-28 | 1981-04-21 | International Business Machines Corporation | Guard rail for contiguous element bubble chips |
FR2480983A1 (fr) * | 1980-04-18 | 1981-10-23 | Commissariat Energie Atomique | Memoire a bulles magnetiques |
JPS57170510A (en) * | 1981-04-15 | 1982-10-20 | Hitachi Ltd | Method of ion implantation |
JPS57186287A (en) * | 1981-05-11 | 1982-11-16 | Hitachi Ltd | Magnetic bubble element |
US4423489A (en) * | 1981-05-14 | 1983-12-27 | Rockwell International Corporation | Replicator for ion-implanted bubble domain devices using stretching action of charged wall |
JPS5896705A (ja) * | 1981-12-04 | 1983-06-08 | Hitachi Ltd | 磁気バブルメモリ素子 |
US4453217A (en) * | 1982-01-04 | 1984-06-05 | Bell Telephone Laboratories, Incorporated | Directory lookup method and apparatus |
CA1197924A (en) * | 1982-06-23 | 1985-12-10 | Yoshio Satoh | Magnetic bubble memory device |
JPS63146691A (ja) * | 1986-12-10 | 1988-06-18 | Matsushita Electric Ind Co Ltd | 動電型スピ−カ |
JPH02172091A (ja) * | 1988-12-23 | 1990-07-03 | Hitachi Ltd | 磁気バブルメモリ素子 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3618054A (en) * | 1969-11-10 | 1971-11-02 | Bell Telephone Labor Inc | Magnetic domain storage organization |
US3691540A (en) * | 1970-10-06 | 1972-09-12 | Ibm | Integrated magneto-resistive sensing of bubble domains |
US3701125A (en) * | 1970-12-31 | 1972-10-24 | Ibm | Self-contained magnetic bubble domain memory chip |
US3828329A (en) * | 1972-07-24 | 1974-08-06 | Bell Telephone Labor Inc | Single wall domain propagation arrangement |
JPS5620683B2 (en:Method) * | 1972-12-27 | 1981-05-15 | ||
JPS5054252A (en:Method) * | 1973-09-10 | 1975-05-13 | ||
JPS5093083A (en:Method) * | 1973-12-17 | 1975-07-24 | ||
US4040019A (en) * | 1974-08-23 | 1977-08-02 | Texas Instruments Incorporated | Ion implanted magnetic bubble memory device having major and minor rows |
US3967002A (en) * | 1974-12-31 | 1976-06-29 | International Business Machines Corporation | Method for making high density magnetic bubble domain system |
-
1976
- 1976-11-03 GB GB45669/76A patent/GB1527005A/en not_active Expired
- 1976-11-15 DE DE19762652032 patent/DE2652032A1/de not_active Withdrawn
- 1976-11-29 FR FR7636410A patent/FR2337400A1/fr active Granted
- 1976-12-10 JP JP14793376A patent/JPS5283140A/ja active Granted
-
1977
- 1977-10-05 US US05/839,720 patent/US4164029A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS5283140A (en) | 1977-07-11 |
FR2337400B1 (en:Method) | 1980-10-24 |
DE2652032A1 (de) | 1977-07-14 |
GB1527005A (en) | 1978-10-04 |
US4164029A (en) | 1979-08-07 |
JPS5652392B2 (en:Method) | 1981-12-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |