FR2335960A1 - Element semi-conducteur perfectionne - Google Patents
Element semi-conducteur perfectionneInfo
- Publication number
- FR2335960A1 FR2335960A1 FR7637721A FR7637721A FR2335960A1 FR 2335960 A1 FR2335960 A1 FR 2335960A1 FR 7637721 A FR7637721 A FR 7637721A FR 7637721 A FR7637721 A FR 7637721A FR 2335960 A1 FR2335960 A1 FR 2335960A1
- Authority
- FR
- France
- Prior art keywords
- perfected
- semiconductor element
- semiconductor
- perfected semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/296—Organo-silicon compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
- H01L2924/13034—Silicon Controlled Rectifier [SCR]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US64217175A | 1975-12-18 | 1975-12-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2335960A1 true FR2335960A1 (fr) | 1977-07-15 |
FR2335960B1 FR2335960B1 (sv) | 1982-07-30 |
Family
ID=24575493
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7637721A Granted FR2335960A1 (fr) | 1975-12-18 | 1976-12-15 | Element semi-conducteur perfectionne |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS5276878A (sv) |
DE (1) | DE2656963A1 (sv) |
FR (1) | FR2335960A1 (sv) |
GB (1) | GB1563421A (sv) |
NL (1) | NL7613944A (sv) |
SE (1) | SE419809B (sv) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0431971A2 (en) * | 1989-12-07 | 1991-06-12 | Kabushiki Kaisha Toshiba | Photosensitive composition and resin-encapsulated semiconductor device |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5474677A (en) * | 1977-11-28 | 1979-06-14 | Hitachi Ltd | Surface stabilizing method of semiconcuctor element using polyimide silicone |
JPS56130947A (en) * | 1980-03-17 | 1981-10-14 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS60137Y2 (ja) * | 1980-05-20 | 1985-01-05 | 九州日立マクセル株式会社 | 電動式噴霧器 |
GB2126786B (en) * | 1982-09-04 | 1986-04-03 | Emi Ltd | Ion sensitive field effect transistor encapsulation |
DE102019105727B4 (de) * | 2019-03-07 | 2020-10-15 | Semikron Elektronik Gmbh & Co. Kg | Thyristor oder Diode |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3316465A (en) * | 1961-03-29 | 1967-04-25 | Siemens Ag | Multi-layer junction semiconductor devices such as controlled rectifiers and transistors, containing electro-positive protective coating |
FR1580665A (sv) * | 1967-09-15 | 1969-09-05 | ||
FR2022876A1 (sv) * | 1968-11-08 | 1970-08-07 | Westinghouse Electric Corp | |
US3597269A (en) * | 1969-09-30 | 1971-08-03 | Westinghouse Electric Corp | Surfce stabilization of semiconductor power devices and article |
FR2090206A1 (sv) * | 1970-05-22 | 1972-01-14 | Gen Electric |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3325450A (en) * | 1965-05-12 | 1967-06-13 | Gen Electric | Polysiloxaneimides and their production |
US3610870A (en) * | 1968-03-13 | 1971-10-05 | Hitachi Ltd | Method for sealing a semiconductor element |
US3628106A (en) * | 1969-05-05 | 1971-12-14 | Gen Electric | Passivated semiconductor device with protective peripheral junction portion |
US3598784A (en) * | 1970-03-11 | 1971-08-10 | Gen Electric | Polysiloxane amides |
US3740305A (en) * | 1971-10-01 | 1973-06-19 | Gen Electric | Composite materials bonded with siloxane containing polyimides |
GB1553243A (en) * | 1975-08-04 | 1979-09-26 | Gen Electric | Semiconductor |
SE418433B (sv) * | 1975-12-11 | 1981-05-25 | Gen Electric | Halvledarelement med ett skikt av ett polymert siloxan-innehallande membranmaterial med variabel permeabilitet anbringat pa utvalda ytomraden av elementet |
-
1976
- 1976-12-14 GB GB52024/76A patent/GB1563421A/en not_active Expired
- 1976-12-15 NL NL7613944A patent/NL7613944A/xx not_active Application Discontinuation
- 1976-12-15 FR FR7637721A patent/FR2335960A1/fr active Granted
- 1976-12-16 SE SE7614186A patent/SE419809B/sv not_active IP Right Cessation
- 1976-12-16 DE DE19762656963 patent/DE2656963A1/de not_active Withdrawn
- 1976-12-17 JP JP51152764A patent/JPS5276878A/ja active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3316465A (en) * | 1961-03-29 | 1967-04-25 | Siemens Ag | Multi-layer junction semiconductor devices such as controlled rectifiers and transistors, containing electro-positive protective coating |
FR1580665A (sv) * | 1967-09-15 | 1969-09-05 | ||
FR2022876A1 (sv) * | 1968-11-08 | 1970-08-07 | Westinghouse Electric Corp | |
US3597269A (en) * | 1969-09-30 | 1971-08-03 | Westinghouse Electric Corp | Surfce stabilization of semiconductor power devices and article |
FR2090206A1 (sv) * | 1970-05-22 | 1972-01-14 | Gen Electric |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0431971A2 (en) * | 1989-12-07 | 1991-06-12 | Kabushiki Kaisha Toshiba | Photosensitive composition and resin-encapsulated semiconductor device |
EP0431971A3 (en) * | 1989-12-07 | 1991-09-18 | Kabushiki Kaisha Toshiba | Photosensitive composition and resin-encapsulated semiconductor device |
US5340684A (en) * | 1989-12-07 | 1994-08-23 | Kabushiki Kaisha Toshiba | Photosensitive composition and resin-encapsulated semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
GB1563421A (en) | 1980-03-26 |
SE419809B (sv) | 1981-08-24 |
JPS5276878A (en) | 1977-06-28 |
NL7613944A (nl) | 1977-06-21 |
DE2656963A1 (de) | 1977-06-30 |
SE7614186L (sv) | 1977-06-19 |
FR2335960B1 (sv) | 1982-07-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |