FR2334204B1 - - Google Patents
Info
- Publication number
- FR2334204B1 FR2334204B1 FR7539998A FR7539998A FR2334204B1 FR 2334204 B1 FR2334204 B1 FR 2334204B1 FR 7539998 A FR7539998 A FR 7539998A FR 7539998 A FR7539998 A FR 7539998A FR 2334204 B1 FR2334204 B1 FR 2334204B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
- H10D84/0116—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including integrated injection logic [I2L]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/65—Integrated injection logic
-
- H10P76/40—
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14879674A JPS5426471B2 (esLanguage) | 1974-12-27 | 1974-12-27 | |
| JP14879774A JPS5415396B2 (esLanguage) | 1974-12-27 | 1974-12-27 | |
| JP14879574A JPS5513584B2 (esLanguage) | 1974-12-27 | 1974-12-27 | |
| JP50001913A JPS5182583A (en) | 1974-12-27 | 1974-12-27 | Handotaisochino seizohoho |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2334204A1 FR2334204A1 (fr) | 1977-07-01 |
| FR2334204B1 true FR2334204B1 (esLanguage) | 1978-05-26 |
Family
ID=27453504
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7539998A Granted FR2334204A1 (fr) | 1974-12-27 | 1975-12-29 | Procede de fabrication d'un dispositif semi-conducteur en logique a injection integree |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4058419A (esLanguage) |
| DE (2) | DE2558925C2 (esLanguage) |
| FR (1) | FR2334204A1 (esLanguage) |
| GB (1) | GB1528027A (esLanguage) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5317081A (en) * | 1976-07-30 | 1978-02-16 | Sharp Corp | Production of i2l device |
| DE2652103C2 (de) * | 1976-11-16 | 1982-10-28 | Ibm Deutschland Gmbh, 7000 Stuttgart | Integrierte Halbleiteranordnung für ein logisches Schaltungskonzept und Verfahren zu ihrer Herstellung |
| US4180827A (en) * | 1977-08-31 | 1979-12-25 | International Business Machines Corporation | NPN/PNP Fabrication process with improved alignment |
| CA1116309A (en) * | 1977-11-30 | 1982-01-12 | David L. Bergeron | Structure and process for optimizing the characteristics of i.sup.2l devices |
| US4168999A (en) * | 1978-12-26 | 1979-09-25 | Fairchild Camera And Instrument Corporation | Method for forming oxide isolated integrated injection logic semiconductor structures having minimal encroachment utilizing special masking techniques |
| US4317690A (en) * | 1980-06-18 | 1982-03-02 | Signetics Corporation | Self-aligned double polysilicon MOS fabrication |
| US4446611A (en) * | 1980-06-26 | 1984-05-08 | International Business Machines Corporation | Method of making a saturation-limited bipolar transistor device |
| DE3136731A1 (de) * | 1981-09-16 | 1983-03-31 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum herstellen einer halbleiteranordnung |
| US5759902A (en) * | 1986-09-26 | 1998-06-02 | Analog Devices, Incorporated | Method of making an integrated circuit with complementary junction-isolated bipolar transistors |
| CN102299070A (zh) * | 2010-06-22 | 2011-12-28 | 无锡华润上华半导体有限公司 | 横向pnp晶体管的制造方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3328214A (en) * | 1963-04-22 | 1967-06-27 | Siliconix Inc | Process for manufacturing horizontal transistor structure |
| US3472710A (en) * | 1967-04-20 | 1969-10-14 | Teledyne Inc | Method of forming a field effect transistor |
| US3489622A (en) * | 1967-05-18 | 1970-01-13 | Ibm | Method of making high frequency transistors |
| US3560278A (en) * | 1968-11-29 | 1971-02-02 | Motorola Inc | Alignment process for fabricating semiconductor devices |
| DE2034371A1 (de) * | 1969-07-12 | 1971-01-28 | Tokyo Shibaura Electric Co Ltd , Kawasaki (Japan) | Verfahren zur Herstellung von Halb leitervornchtungen |
| DE2262297C2 (de) * | 1972-12-20 | 1985-11-28 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithisch integrierbare, logisch verknüpfbare Halbleiterschaltungsanordnung mit I↑2↑L-Aufbau |
| US3919005A (en) * | 1973-05-07 | 1975-11-11 | Fairchild Camera Instr Co | Method for fabricating double-diffused, lateral transistor |
| US3873989A (en) * | 1973-05-07 | 1975-03-25 | Fairchild Camera Instr Co | Double-diffused, lateral transistor structure |
| GB1507061A (en) * | 1974-03-26 | 1978-04-12 | Signetics Corp | Semiconductors |
| US3982266A (en) * | 1974-12-09 | 1976-09-21 | Texas Instruments Incorporated | Integrated injection logic having high inverse current gain |
-
1975
- 1975-12-24 US US05/644,294 patent/US4058419A/en not_active Expired - Lifetime
- 1975-12-29 DE DE2558925A patent/DE2558925C2/de not_active Expired
- 1975-12-29 DE DE2560576A patent/DE2560576C2/de not_active Expired
- 1975-12-29 FR FR7539998A patent/FR2334204A1/fr active Granted
- 1975-12-29 GB GB53012/75A patent/GB1528027A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1528027A (en) | 1978-10-11 |
| US4058419A (en) | 1977-11-15 |
| DE2558925C2 (de) | 1985-10-31 |
| DE2558925A1 (de) | 1976-07-08 |
| FR2334204A1 (fr) | 1977-07-01 |
| DE2560576C2 (de) | 1985-10-31 |