FR2331154A1 - Transistor bipolaire module par la grille - Google Patents
Transistor bipolaire module par la grilleInfo
- Publication number
- FR2331154A1 FR2331154A1 FR7531597A FR7531597A FR2331154A1 FR 2331154 A1 FR2331154 A1 FR 2331154A1 FR 7531597 A FR7531597 A FR 7531597A FR 7531597 A FR7531597 A FR 7531597A FR 2331154 A1 FR2331154 A1 FR 2331154A1
- Authority
- FR
- France
- Prior art keywords
- grid
- bipolar transistor
- modulated
- transistor modulated
- bipolar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/241—Avalanche BJTs
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/515,164 US3979769A (en) | 1974-10-16 | 1974-10-16 | Gate modulated bipolar transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2331154A1 true FR2331154A1 (fr) | 1977-06-03 |
| FR2331154B1 FR2331154B1 (enExample) | 1980-02-15 |
Family
ID=24050215
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7531597A Granted FR2331154A1 (fr) | 1974-10-16 | 1975-10-15 | Transistor bipolaire module par la grille |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3979769A (enExample) |
| JP (1) | JPS5944788B2 (enExample) |
| DE (1) | DE2545908C2 (enExample) |
| FR (1) | FR2331154A1 (enExample) |
| GB (1) | GB1525469A (enExample) |
| SE (1) | SE412145B (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4160986A (en) * | 1976-08-02 | 1979-07-10 | Johnson David M | Bipolar transistors having fixed gain characteristics |
| JPS58103169A (ja) * | 1981-12-15 | 1983-06-20 | Matsushita Electric Ind Co Ltd | 半導体可変抵抗素子 |
| JPH0244758A (ja) * | 1988-08-05 | 1990-02-14 | Koudenshi Kogyo Kenkyusho:Kk | ベース変調形バイポーラ・トランジスタ |
| KR100956160B1 (ko) * | 2005-10-13 | 2010-05-06 | 엘지전자 주식회사 | 부호화/복호화 방법 및 장치. |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL224962A (enExample) * | 1958-02-15 | |||
| DE1294558B (de) * | 1961-06-07 | 1969-05-08 | Westinghouse Electric Corp | Hochspannungsgleichrichter und Verfahren zum Herstellen |
| FR1450846A (fr) * | 1964-07-21 | 1966-06-24 | Siemens Ag | Composant à semi-conducteurs et son procédé de fabrication |
| US3760239A (en) * | 1971-06-09 | 1973-09-18 | Cress S | Coaxial inverted geometry transistor having buried emitter |
| JPS5235515B2 (enExample) * | 1972-09-28 | 1977-09-09 |
-
1974
- 1974-10-16 US US05/515,164 patent/US3979769A/en not_active Expired - Lifetime
-
1975
- 1975-09-25 GB GB39329/75A patent/GB1525469A/en not_active Expired
- 1975-10-14 DE DE2545908A patent/DE2545908C2/de not_active Expired
- 1975-10-15 FR FR7531597A patent/FR2331154A1/fr active Granted
- 1975-10-15 JP JP50123325A patent/JPS5944788B2/ja not_active Expired
- 1975-10-16 SE SE7511628A patent/SE412145B/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| DE2545908C2 (de) | 1987-02-05 |
| FR2331154B1 (enExample) | 1980-02-15 |
| US3979769A (en) | 1976-09-07 |
| JPS5944788B2 (ja) | 1984-11-01 |
| JPS5164878A (enExample) | 1976-06-04 |
| SE412145B (sv) | 1980-02-18 |
| DE2545908A1 (de) | 1976-05-06 |
| SE7511628L (sv) | 1976-04-20 |
| GB1525469A (en) | 1978-09-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |