FR2330143B3 - - Google Patents

Info

Publication number
FR2330143B3
FR2330143B3 FR7632651A FR7632651A FR2330143B3 FR 2330143 B3 FR2330143 B3 FR 2330143B3 FR 7632651 A FR7632651 A FR 7632651A FR 7632651 A FR7632651 A FR 7632651A FR 2330143 B3 FR2330143 B3 FR 2330143B3
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7632651A
Other languages
French (fr)
Other versions
FR2330143A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of FR2330143A1 publication Critical patent/FR2330143A1/fr
Application granted granted Critical
Publication of FR2330143B3 publication Critical patent/FR2330143B3/fr
Granted legal-status Critical Current

Links

Classifications

    • H10P30/204
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/60Capacitors
    • H10D1/62Capacitors having potential barriers
    • H10D1/64Variable-capacitance diodes, e.g. varactors 
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60Impurity distributions or concentrations
    • H10P30/20
    • H10P30/212
    • H10P30/222
FR7632651A 1975-10-28 1976-10-28 Procede d'implantation ionique pour la fabrication de semi-conducteurs Granted FR2330143A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50129646A JPS5834931B2 (ja) 1975-10-28 1975-10-28 ハンドウタイヘノフジユンブツドウニユウホウ

Publications (2)

Publication Number Publication Date
FR2330143A1 FR2330143A1 (fr) 1977-05-27
FR2330143B3 true FR2330143B3 (index.php) 1979-07-13

Family

ID=15014653

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7632651A Granted FR2330143A1 (fr) 1975-10-28 1976-10-28 Procede d'implantation ionique pour la fabrication de semi-conducteurs

Country Status (4)

Country Link
JP (1) JPS5834931B2 (index.php)
DE (1) DE2649134A1 (index.php)
FR (1) FR2330143A1 (index.php)
NL (1) NL7611983A (index.php)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2351082A1 (fr) * 1976-05-11 1977-12-09 Rhone Poulenc Ind Procede de fabrication d'acide terephtalique a partir de terephtalate dipotassique, realisation en deux etages
DE2833319C2 (de) * 1978-07-29 1982-10-07 Philips Patentverwaltung Gmbh, 2000 Hamburg Kapazitätsdiode
JP2597976B2 (ja) * 1985-03-27 1997-04-09 株式会社東芝 半導体装置及びその製造方法
JPS61178268U (index.php) * 1985-04-24 1986-11-07
JPH0831428B2 (ja) * 1985-06-20 1996-03-27 住友電気工業株式会社 結晶へのイオン注入方法
US4790890A (en) * 1987-12-03 1988-12-13 Ireco Incorporated Packaged emulsion explosives and methods of manufacture thereof
JPH04343479A (ja) * 1991-05-21 1992-11-30 Nec Yamagata Ltd 可変容量ダイオード
EP1139434A3 (en) 2000-03-29 2003-12-10 Tyco Electronics Corporation Variable capacity diode with hyperabrubt junction profile

Also Published As

Publication number Publication date
FR2330143A1 (fr) 1977-05-27
NL7611983A (nl) 1977-05-02
DE2649134A1 (de) 1977-05-12
JPS5834931B2 (ja) 1983-07-29
JPS5253658A (en) 1977-04-30

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