FR2330143B3 - - Google Patents
Info
- Publication number
- FR2330143B3 FR2330143B3 FR7632651A FR7632651A FR2330143B3 FR 2330143 B3 FR2330143 B3 FR 2330143B3 FR 7632651 A FR7632651 A FR 7632651A FR 7632651 A FR7632651 A FR 7632651A FR 2330143 B3 FR2330143 B3 FR 2330143B3
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
- H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
- H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/64—Variable-capacitance diodes, e.g. varactors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
- H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
- H10P30/212—Through-implantation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
- H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50129646A JPS5834931B2 (ja) | 1975-10-28 | 1975-10-28 | ハンドウタイヘノフジユンブツドウニユウホウ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2330143A1 FR2330143A1 (fr) | 1977-05-27 |
| FR2330143B3 true FR2330143B3 (enFirst) | 1979-07-13 |
Family
ID=15014653
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7632651A Granted FR2330143A1 (fr) | 1975-10-28 | 1976-10-28 | Procede d'implantation ionique pour la fabrication de semi-conducteurs |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5834931B2 (enFirst) |
| DE (1) | DE2649134A1 (enFirst) |
| FR (1) | FR2330143A1 (enFirst) |
| NL (1) | NL7611983A (enFirst) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2351082A1 (fr) * | 1976-05-11 | 1977-12-09 | Rhone Poulenc Ind | Procede de fabrication d'acide terephtalique a partir de terephtalate dipotassique, realisation en deux etages |
| DE2833319C2 (de) * | 1978-07-29 | 1982-10-07 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Kapazitätsdiode |
| JP2597976B2 (ja) * | 1985-03-27 | 1997-04-09 | 株式会社東芝 | 半導体装置及びその製造方法 |
| JPS61178268U (enFirst) * | 1985-04-24 | 1986-11-07 | ||
| JPH0831428B2 (ja) * | 1985-06-20 | 1996-03-27 | 住友電気工業株式会社 | 結晶へのイオン注入方法 |
| US4790890A (en) * | 1987-12-03 | 1988-12-13 | Ireco Incorporated | Packaged emulsion explosives and methods of manufacture thereof |
| JPH04343479A (ja) * | 1991-05-21 | 1992-11-30 | Nec Yamagata Ltd | 可変容量ダイオード |
| EP1139434A3 (en) | 2000-03-29 | 2003-12-10 | Tyco Electronics Corporation | Variable capacity diode with hyperabrubt junction profile |
-
1975
- 1975-10-28 JP JP50129646A patent/JPS5834931B2/ja not_active Expired
-
1976
- 1976-10-28 NL NL7611983A patent/NL7611983A/xx not_active Application Discontinuation
- 1976-10-28 FR FR7632651A patent/FR2330143A1/fr active Granted
- 1976-10-28 DE DE19762649134 patent/DE2649134A1/de not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| DE2649134A1 (de) | 1977-05-12 |
| JPS5253658A (en) | 1977-04-30 |
| JPS5834931B2 (ja) | 1983-07-29 |
| FR2330143A1 (fr) | 1977-05-27 |
| NL7611983A (nl) | 1977-05-02 |